A. Suhane, G. V. D. Bosch, A. Arreghini, L. Breuil, A. Cacciato, M. Zahid, I. Debusschere, K. D. Meyer, J. V. Houdt
{"title":"用于MLC电荷阱NAND闪存的高性能thanas存储器","authors":"A. Suhane, G. V. D. Bosch, A. Arreghini, L. Breuil, A. Cacciato, M. Zahid, I. Debusschere, K. D. Meyer, J. V. Houdt","doi":"10.1109/IMW.2011.5873210","DOIUrl":null,"url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"170 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High Performance THANVaS Memories for MLC Charge Trap NAND Flash\",\"authors\":\"A. Suhane, G. V. D. Bosch, A. Arreghini, L. Breuil, A. Cacciato, M. Zahid, I. Debusschere, K. D. Meyer, J. V. Houdt\",\"doi\":\"10.1109/IMW.2011.5873210\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"NA\",\"PeriodicalId\":261995,\"journal\":{\"name\":\"2011 3rd IEEE International Memory Workshop (IMW)\",\"volume\":\"170 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 3rd IEEE International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2011.5873210\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 3rd IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2011.5873210","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
