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2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)最新文献

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Photonic band gap maps for wurtzite GaN and AlN 纤锌矿氮化镓和氮化铝的光子带隙图
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940102
E. G. Melo, G. Rehder, M. I. Alayo
{"title":"Photonic band gap maps for wurtzite GaN and AlN","authors":"E. G. Melo, G. Rehder, M. I. Alayo","doi":"10.1109/SBMICRO.2014.6940102","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940102","url":null,"abstract":"GaN and AlN have attracted a great attention in the photonics researches. The large band gaps of these materials turn them suitable for nanophotonic devices that operate in light ranges from visible to deep ultraviolet. The photonic band gap maps obtained from plane wave calculations of common structures in wurtzite GaN and also in AlN were presented and analyzed. A complete photonic band gap with flat bands in the M - K direction was observed in the triangular lattice of air holes in dielectric medium.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133441863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters x射线辐射剂量率对三栅SOI finfet参数的影响
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940085
C. Bordallo, F. F. Teixeira, M. Silveira, J. Martino, P. Agopian, E. Simoen, C. Claeys
{"title":"The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters","authors":"C. Bordallo, F. F. Teixeira, M. Silveira, J. Martino, P. Agopian, E. Simoen, C. Claeys","doi":"10.1109/SBMICRO.2014.6940085","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940085","url":null,"abstract":"In this work, the effect of the X-Ray radiation dose rate on n and p Triple-Gate SOI FinFET device characteristics is investigated. The threshold voltage shift, the subthreshold slope shift, the maximum transconductance and the ION/IOFF ratio were analyzed. In nMuGFETs the characteristics are always degraded due to the increase of the back conduction and for pMuGFETs, the devices have their subthreshold region characteristics improved by the decrease of back conduction. Lower dose rates of X-Ray radiation are shown to be more effective for the trapping of charges and the formation of interface traps than the use of higher doses rates.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129867526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Sensing different mixtures of H2, CH4 and CO through an array of chemiresistors 通过一系列化学电阻感应H2, CH4和CO的不同混合物
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940130
R. Moreira, L. H. Higa Moreira, S. G. dos Santos Filho
{"title":"Sensing different mixtures of H2, CH4 and CO through an array of chemiresistors","authors":"R. Moreira, L. H. Higa Moreira, S. G. dos Santos Filho","doi":"10.1109/SBMICRO.2014.6940130","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940130","url":null,"abstract":"This work proposes a set up for sensing H<sub>2</sub>, CH<sub>4</sub> and CO generated from biomass. The sensing is performed by commercially avaliable SnO<sub>2</sub> chemiresistors [6], one for each gas. The proposed set up has a gas dilution stage before the sensing step. One hundred and twenty five different gas mixtures were prepared from the combination of H<sub>2</sub>, CH<sub>4</sub> and CO using nitrogen as carrier gas. The samples were evaluated under two different methods for sensor recovery: forced and natural. Based on the results, it was established that the cross sensitivities of the CO and CH<sub>4</sub> sensors are too high while the H<sub>2</sub> sensor presents selectivity of almost 100%. Also, the natural recovery method showed improved results because of the better thermal stability of the system. An artificial neural network was developed with the purpose of overcoming the problem of cross-sensitivities and indicated a minimum squared error energy (SSE) of 8.5×10<sup>-8</sup> for H<sub>2</sub>, 2.0×10<sup>-3</sup> for CH<sub>4</sub> and 5.1×10<sup>-3</sup> for CO.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132890907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effect of annealing time on memory behavior of MOS structures based on Ge nanoparticles 退火时间对基于锗纳米粒子的MOS结构记忆性能的影响
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940123
M. Mederos, S. Mestanza, I. Doi, J. A. Diniz
{"title":"Effect of annealing time on memory behavior of MOS structures based on Ge nanoparticles","authors":"M. Mederos, S. Mestanza, I. Doi, J. A. Diniz","doi":"10.1109/SBMICRO.2014.6940123","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940123","url":null,"abstract":"Effects of annealing time on memory characteristics of Ge nanoparticles (NPs) as floating gate of metal-oxide-semiconductor (MOS) structure are investigated in this work. First, Ge NPs at 8.5 nm-near to Si/SiO2 interface were obtained by Low Pressure Chemical Vapor Deposition (LPCVD). The morphology and dimension of these NPs was estimated by the statistic treatment of Atomic Force Microscopy images, which exhibited an homogeneous distribution of NPs over SiO2, with a main diameter of (6.72±1.97) nm and NPs-density of 1.5×1012 cm-2. For the characterization of memory properties, high-frequency Capacitive-Voltage measurements as function of annealing time were performed on the MOS structure containing these Ge NPs. The results showed a memory window of 11.92 V with an electrical charge storage density of 6.61×1012 cm-2. The Current-Voltage measurement showed a Fowler-Nordheim tunneling as the conduction mechanism of our device.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"332 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114010923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Piezoelectric effect in nanofibers deposited with magnetic field assisted electrospinning using solutions with PVDF and Fe3O4 nanoparticles 用PVDF和Fe3O4纳米粒子溶液制备磁场辅助静电纺丝纳米纤维的压电效应
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940128
Juan A. González Sánchez, R. Furlan, R. Lopez, E. Fachini, A. N. Rodrigues da Silva
{"title":"Piezoelectric effect in nanofibers deposited with magnetic field assisted electrospinning using solutions with PVDF and Fe3O4 nanoparticles","authors":"Juan A. González Sánchez, R. Furlan, R. Lopez, E. Fachini, A. N. Rodrigues da Silva","doi":"10.1109/SBMICRO.2014.6940128","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940128","url":null,"abstract":"This study aims at investigating the piezoelectric behavior of nanofibers containing poly (vinylidene fluoride) (PVDF) with and without Fe3O4 nanoparticles at different concentrations. The nanofibers were formed using magnetic field assisted electrospinning. All Polymeric solutions contain PVDF, DMF and acetone with a concentration of 18 wt% (DMF to Acetone ratio of 3 to 1). Iron Oxide Nanopowder (Fe3O4, particle diameter of 20 nm to 30 nm) to PVDF ratios are: 1:5, 1:10 and 1:15. All nanofibers with nanoparticles in this study resulted with blisters related to Fe3O4 agglomerates distributed on the surface. Piezoelectric properties were observed in the all nanofibers after they are ejected and restructured by the electrospinning process, resulting the crystalline β phase.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116153761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Real-time study of adenosine-5' monophosphate adsorption with a Love wave sensor based on molecularly imprinted polymer 基于分子印迹聚合物的Love波传感器实时研究腺苷-5'单磷酸吸附
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940129
N. Lebal, H. Hallil, V. Raimbault, J. Lachaud, A. Krstulja, R. Delépée, L. Agrofoglio, C. Dejous, D. Rebière
{"title":"Real-time study of adenosine-5' monophosphate adsorption with a Love wave sensor based on molecularly imprinted polymer","authors":"N. Lebal, H. Hallil, V. Raimbault, J. Lachaud, A. Krstulja, R. Delépée, L. Agrofoglio, C. Dejous, D. Rebière","doi":"10.1109/SBMICRO.2014.6940129","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940129","url":null,"abstract":"In this paper, we present a study of real-time adsorption on thin film Molecularly imprited polymer (MIP) coating based on commercial nucleotides Adenosine Mono Phosphate (AMP). The MIP sensitive layer is deposited on top of the propagation path of a Love wave sensor. Detection tests of different concentrations of AMP have been performed in aqueous media through a microfluidic chip placed above the delay line. Real time sensor's response was recorded in terms of frequency shift using an oscillating configuration setup. A frequency shift of 150 Hz was recorded for 5 ppm AMP concentration.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114900505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical behavior of devices composed by dielectrophoretically deposited carbon nanotubes for gas sensing applications 气敏用介质电泳沉积碳纳米管组成器件的电学性能
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940131
Marcos Moraes, E. Galeazzo, H. Peres, M. Dantas, F. J. Ramirez-Fernandez
{"title":"Electrical behavior of devices composed by dielectrophoretically deposited carbon nanotubes for gas sensing applications","authors":"Marcos Moraes, E. Galeazzo, H. Peres, M. Dantas, F. J. Ramirez-Fernandez","doi":"10.1109/SBMICRO.2014.6940131","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940131","url":null,"abstract":"Miniaturized gas sensors have been developed with a view to integrating them into smart systems for environment control, for example. Intensive research has been focused on investigating new sensing materials, such as carbon nanotubes (CNT) because of their promising characteristics, but there are challenges related to their application in commercial devices such as sensitivity, compatibility, and complexity of miniaturization, among others. We report the study of the electrical behavior of multi-walled carbon nanotubes (MWCNT) material deposited between interdigitated electrode structures by means of dielectrophoresis (DEP), which is a simple and cost-effective method. The devices were fabricated by varying the DEP process time. Remarkable changes in their electric resistance in the presence of water vapor were noticed as a function of MWCNT quantities deposited. These results indicate that the charge exchange mechanisms on the CNT surface play an important role in the material resistivity.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115208857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well 量子阱中Si δ掺杂n型共振隧道二极管的圆极化
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940126
L. K. Herval, H. V. Galeti, V. Orsi Gordo, Y. Galvão Gobato, M. Brasil, D. Taylor, M. Henini
{"title":"Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well","authors":"L. K. Herval, H. V. Galeti, V. Orsi Gordo, Y. Galvão Gobato, M. Brasil, D. Taylor, M. Henini","doi":"10.1109/SBMICRO.2014.6940126","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940126","url":null,"abstract":"In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs /AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. Three resonant peaks were observed in the current-voltage characteristics curve (I(V)) which were associated to donor-assisted resonant tunneling, electron resonant tunneling and to phonon-assisted resonant tunneling. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affect the spin-polarization of carriers in the well. The quantum well photoluminescence shows strong circular polarization degrees with values up to 85% under 15T at the donor assisted resonant tunneling peak voltage. Our results can be exploited for future development of voltage-controlled spintronics devices.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114765759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Graphene for advanced devices applications 用于先进器件的石墨烯
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940095
V. B. Sivieri, P. Wessely, U. Schwalke, P. Agopian, J. Martino
{"title":"Graphene for advanced devices applications","authors":"V. B. Sivieri, P. Wessely, U. Schwalke, P. Agopian, J. Martino","doi":"10.1109/SBMICRO.2014.6940095","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940095","url":null,"abstract":"In this work, the behavior of the different types of graphene transistors in relation to the number of stacked layers are investigated as well as the influence of a palladium layer deposited on the pads of a CCVD grown graphene FET. The advantages of using this material in Tunnel FETs are also discussed. Bilayer graphene FETs with high on/off-current ratio, in the order of 106 were found. In contrast to bilayer graphene, monolayer graphene cannot be used in logical electronics applications, once that their on/off-current ratio is very low.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129509797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of ETM microgrippers using Topology Optimization 基于拓扑优化的ETM微夹持器的研制
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940093
R. Horstmann, Liz K. R. Ardi, G. Rehder, E. C. Silva, M. Carrenõ
{"title":"Development of ETM microgrippers using Topology Optimization","authors":"R. Horstmann, Liz K. R. Ardi, G. Rehder, E. C. Silva, M. Carrenõ","doi":"10.1109/SBMICRO.2014.6940093","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940093","url":null,"abstract":"This article presents the development process of an microgripper for the manipulation of microelements such as particles of organic and inorganic materials. The device was deigned to manipulate microparticles between 130-140 micrometers in diameter using the thermal expansion due to the Joule effect. The microgripper geometry was optimized through a Topology Optimization Method, which applies a continuum topology optimization with spatial filtering technique. The optimized topology was modeled using Finite Element Method in order to verify the behavior of the designed geometry. The structure was fabricated using simple, low-cost process based on a flip-chip technology. The structure was fabricated using electroplated nickel, in order to increase the displacement of the tip of the microgripper. Finally, the electrothermomechanical microgripper was tested and the total displacement of the structure measured using optical microscopy. A total displacement of 20 microns can be safely achieved without permanent deformation of the structure.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129933122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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