V. B. Sivieri, P. Wessely, U. Schwalke, P. Agopian, J. Martino
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In this work, the behavior of the different types of graphene transistors in relation to the number of stacked layers are investigated as well as the influence of a palladium layer deposited on the pads of a CCVD grown graphene FET. The advantages of using this material in Tunnel FETs are also discussed. Bilayer graphene FETs with high on/off-current ratio, in the order of 106 were found. In contrast to bilayer graphene, monolayer graphene cannot be used in logical electronics applications, once that their on/off-current ratio is very low.
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