Graphene for advanced devices applications

Abstract

In this work, the behavior of the different types of graphene transistors in relation to the number of stacked layers are investigated as well as the influence of a palladium layer deposited on the pads of a CCVD grown graphene FET. The advantages of using this material in Tunnel FETs are also discussed. Bilayer graphene FETs with high on/off-current ratio, in the order of 106 were found. In contrast to bilayer graphene, monolayer graphene cannot be used in logical electronics applications, once that their on/off-current ratio is very low.