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2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)最新文献

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Effect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4K 温度对无结纳米线晶体管电参数的影响降至4K
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940134
R. Trevisoli, M. de Souza, R. Doria, V. Kilchtyska, D. Flandre, M. Pavanello
{"title":"Effect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4K","authors":"R. Trevisoli, M. de Souza, R. Doria, V. Kilchtyska, D. Flandre, M. Pavanello","doi":"10.1109/SBMICRO.2014.6940134","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940134","url":null,"abstract":"The aim of this work is to analyze the operation of Junctionless Nanowire Transistors at liquid helium temperature, focusing the operation at linear regime. The drain current, the transconductance, the low field mobility, subthreshold slope, the interface trap density and the channel resistance are the key parameters under analysis.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128555368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Measurement of p-n-junction diode behavior under large signal and high frequency p-n结二极管在大信号和高频下的性能测量
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940086
Maria Augusta R. B. L. Fernandes, Edval J. P. Santos
{"title":"Measurement of p-n-junction diode behavior under large signal and high frequency","authors":"Maria Augusta R. B. L. Fernandes, Edval J. P. Santos","doi":"10.1109/SBMICRO.2014.6940086","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940086","url":null,"abstract":"Measurements of diode dynamic conductance and dynamic capacitance for frequencies up to 10×τp,n-1, and voltage amplitude level up tp 100 mV was carried out with a precision impedancemeter. The results were compared with the theoretical expressions obtained with the spectral approach to the charge carrier transport in p-n-junctions. This experimental confirmation is of practical interest, as one can use the theory to extract device parameters, such as: relaxation time τp,n, and junction injection coefficient. These experiments were carried to test the extension of the conventional p-n-junction theory.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126784771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of gate contact over active area 有源区域栅极接触的研究
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940082
M. Carmona, Q. Hubert, L. Lopez, F. Julien, J. Ogier, D. Goguenheim, L. Beauvisage
{"title":"Study of gate contact over active area","authors":"M. Carmona, Q. Hubert, L. Lopez, F. Julien, J. Ogier, D. Goguenheim, L. Beauvisage","doi":"10.1109/SBMICRO.2014.6940082","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940082","url":null,"abstract":"In this paper, analog and digital low-voltage MOSFETs having the gate contact over Shallow Trench Isolation (reference layout) or over active area (innovative layout) are studied. Using electrical parameters measurements, Linear Ramp Voltage Stress and Hot Carrier Injection stress, we demonstrate that moving the gate contact over active area does not degrade the performances and reliability of studied devices whatever the device area or oxide thickness (down to 2.1nm), and hence, could be a relevant solution in order to reduce the CMOS device area.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":" 38","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113952072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Temperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes 温度和后门偏置对横向SOI PIN光电二极管工作的影响
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940097
C. Novo, R. Giacomini, R. Doria, A. Afzalian, D. Flandre
{"title":"Temperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes","authors":"C. Novo, R. Giacomini, R. Doria, A. Afzalian, D. Flandre","doi":"10.1109/SBMICRO.2014.6940097","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940097","url":null,"abstract":"This paper presents a study of back-gate bias and temperature influence on the operation of lateral SOI PIN photodiodes. Experimental results showed that the operation mode of the photodiodes is affected by back-gate bias, modifying the photogenerated current, which has a strong influence on the illuminated to dark ratio, as well as, on the quantum efficiency. At lower temperatures, the results showed that the quantum efficiency can be improved by biasing the device in inversion mode, while at higher temperatures, the accumulation mode showed a higher illuminated to dark ratio.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114180893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Immunoassay on silicon chip 硅芯片免疫分析
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940079
T. Ishikawa
{"title":"Immunoassay on silicon chip","authors":"T. Ishikawa","doi":"10.1109/SBMICRO.2014.6940079","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940079","url":null,"abstract":"Magnetic beads-based immunoassay has the potential to provide an on-chip immunoassay. After preliminary experiments, it turned out that a Hall sensor which is fabricated on a standard CMOS can provide an acceptable sensitivity to run an assay on the chip. To implement a practical assay platform, a test chip was designed and fabricated.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"525 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123575092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication and characterization of an electromagnetic valve in a microfluidic device 微流控装置电磁阀的制造与表征
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940096
L. E. Ribeiro, F. Fruett
{"title":"Fabrication and characterization of an electromagnetic valve in a microfluidic device","authors":"L. E. Ribeiro, F. Fruett","doi":"10.1109/SBMICRO.2014.6940096","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940096","url":null,"abstract":"In microfluidic devices, the integration of micro-sensors, reactors and actuators can result in a portable systems allowing the developing of several applications. In this work we fabricated and tested an electromagnetic valve which is compatible with a previously fabricated microfluidic sensor. The valve can be used to control the flux over a microchannel or even be combined to form a nozzle-diffuser micropump.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130290598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thin titanium oxide films deposited by e-beam evaporation or by sputtering technique with additional rapid thermal oxidation 用电子束蒸发或溅射技术加快速热氧化沉积氧化钛薄膜
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI: 10.1109/SBMICRO.2014.6940118
A. de Barros, I. Doi, J. Swart, J. A. Diniz
{"title":"Thin titanium oxide films deposited by e-beam evaporation or by sputtering technique with additional rapid thermal oxidation","authors":"A. de Barros, I. Doi, J. Swart, J. A. Diniz","doi":"10.1109/SBMICRO.2014.6940118","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940118","url":null,"abstract":"Titanium oxide has been extensively studied not only in microelectronics, due to its high refractive index, excellent optical constants and high dielectric constant but also in materials science where it was proved to be a biocompatible oxide. In this work we show the structural and electrical characterization results of TiO<sub>x</sub> thin films obtained from rapid thermal oxidation of thin titanium films. A comparison between Ti films deposited by e-beam evaporation and sputtering technique with subsequent rapid thermal oxidation with different temperatures on Si wafers is presented. We analyzed the structural characteristics by Ellipsometry, Raman Spectroscopy, Atomic Force Microscopy and X-Ray Difraction identifying the tetragonal crystal structure of the rutile form of TiO<sub>2</sub>. Electrical characterizations were obtained through I-V and C-V curves of Al/Si/TiO<sub>x</sub>/Al capacitors. Field effect transistors were made in order to analyze I<sub>D</sub>×V<sub>DS</sub>, g<sub>M</sub>×V<sub>GS</sub> and I<sub>D</sub>×V<sub>GS</sub> curves. Electrical characterization of the best sample through the C-V curve showed dielectric constant equal to 8, interface states density in the order of 10<sup>-10</sup>eV<sup>-1</sup>.cm<sup>-2</sup> and current density of the order of 10<sup>-4</sup>/cm<sup>2</sup>. The MOSFET presented Early voltage in the order of kV and output resistance in order of MΩ. This device has threshold voltage equal to 0.30V, leakage current on the order of 10<sup>-8</sup>A at VGS equal to -1V and transconductance equal to 12μS, for sample with 4×10<sup>-4</sup>cm<sup>2</sup> gate area.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127566625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Synthesis of anatase and rutile phases of TiO2 by atomic layer deposition: Substrate effect 原子层沉积法合成锐钛矿和金红石相TiO2:衬底效应
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-09-01 DOI: 10.1109/SBMICRO.2014.6940121
R. Pessoa, F. P. Pereira, G. Testoni, W. Chiappim, H. Maciel, L. Santos
{"title":"Synthesis of anatase and rutile phases of TiO2 by atomic layer deposition: Substrate effect","authors":"R. Pessoa, F. P. Pereira, G. Testoni, W. Chiappim, H. Maciel, L. Santos","doi":"10.1109/SBMICRO.2014.6940121","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940121","url":null,"abstract":"This paper discusses about the effect of substrate type on structure of titanium dioxide deposited by atomic layer deposition using titanium tetrachloride and deionized water as precursors. The substrates investigated are silicon (100) and cover glass, and the depositions were made at temperatures of 300°C and 450°C. We observed through Rutherford backscattering spectrometry that the TiO2 thin films grown on both substrates are stoichiometric. Grazing incidence x-ray diffraction showed that rutile phase can be obtained in almost pure phase at temperature of 450°C, however only for glass substrate. For the case of silicon (100) substrate was observed that the anatase phase is preponderant for both process temperatures investigated.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124192026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparison of analog performance between SOI and Bulk pFinFET SOI和Bulk pFinFET模拟性能比较
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-09-01 DOI: 10.1109/SBMICRO.2014.6940106
A. Oliveira, P. Agopian, E. Simoen, C. Claeys, J. Martino
{"title":"Comparison of analog performance between SOI and Bulk pFinFET","authors":"A. Oliveira, P. Agopian, E. Simoen, C. Claeys, J. Martino","doi":"10.1109/SBMICRO.2014.6940106","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940106","url":null,"abstract":"This paper presents an experimental comparison of the analog performance between triple gate pMOSFET devices constructed on Silicon-On-Insulator (SOI) and Bulk substrates. This comparison was performed based on the drain current, subthreshold swing, transconductance over drain current ratio, Early voltage, intrinsic voltage gain and, finally, unit gain frequency. The SOI devices presented a superior analog behavior compared to the Bulk ones for almost all studied dimensions, except for the short channel length and wide fin width, where the back parasitic conduction degraded all the analyzed parameters. Furthermore, due to the existence of the doping implantation under the channel region in the Bulk devices, it became less susceptible to any leakage in this region.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"224 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131486778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InGaAs/InAlAs quantum well infrared photodetectors for operation in the 1.7 to 3.1 µm wavelength range InGaAs/InAlAs量子阱红外探测器，工作波长范围为1.7 ~ 3.1µm
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-09-01 DOI: 10.1109/SBMICRO.2014.6940111
L. Guerra, G. M. Penello, L. Pinto, R. Jakomin, R. Mourão, M. Pires, M. H. Degani, M. Z. Maialle, P. L. Souza
{"title":"InGaAs/InAlAs quantum well infrared photodetectors for operation in the 1.7 to 3.1 µm wavelength range","authors":"L. Guerra, G. M. Penello, L. Pinto, R. Jakomin, R. Mourão, M. Pires, M. H. Degani, M. Z. Maialle, P. L. Souza","doi":"10.1109/SBMICRO.2014.6940111","DOIUrl":"https://doi.org/10.1109/SBMICRO.2014.6940111","url":null,"abstract":"InGaAs/InAlAs superlattice structures with a wider central quantum well have been developed for quantum well infrared photodetectors (QWIPs) for operation between 1.7 and 3.1 microns, a range normally unreachable with conventional intraband transitions in this type of material. With this approach the limitation of having bound states only with energies below the barrier no longer holds, therefore it becomes possible to detect energies higher than the upper limit imposed by the bandoffset of the materials. In this work theoretical as well as experimental results on the absorption of such QWIP, which are in excellent agreement, are presented showing photocurrent around 2.6 microns.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"55 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115997946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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