Measurement of p-n-junction diode behavior under large signal and high frequency

Abstract

Measurements of diode dynamic conductance and dynamic capacitance for frequencies up to 10×τp,n-1, and voltage amplitude level up tp 100 mV was carried out with a precision impedancemeter. The results were compared with the theoretical expressions obtained with the spectral approach to the charge carrier transport in p-n-junctions. This experimental confirmation is of practical interest, as one can use the theory to extract device parameters, such as: relaxation time τp,n, and junction injection coefficient. These experiments were carried to test the extension of the conventional p-n-junction theory.