Synthesis of anatase and rutile phases of TiO2 by atomic layer deposition: Substrate effect

Abstract

This paper discusses about the effect of substrate type on structure of titanium dioxide deposited by atomic layer deposition using titanium tetrachloride and deionized water as precursors. The substrates investigated are silicon (100) and cover glass, and the depositions were made at temperatures of 300°C and 450°C. We observed through Rutherford backscattering spectrometry that the TiO2 thin films grown on both substrates are stoichiometric. Grazing incidence x-ray diffraction showed that rutile phase can be obtained in almost pure phase at temperature of 450°C, however only for glass substrate. For the case of silicon (100) substrate was observed that the anatase phase is preponderant for both process temperatures investigated.