温度对无结纳米线晶体管电参数的影响降至4K

2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI:10.1109/SBMICRO.2014.6940134

R. Trevisoli, M. de Souza, R. Doria, V. Kilchtyska, D. Flandre, M. Pavanello

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引用次数: 7

摘要

本工作的目的是分析无结纳米线晶体管在液氦温度下的工作，重点是在线性状态下的工作。漏极电流、跨导、低场迁移率、亚阈值斜率、界面陷阱密度和沟道电阻是分析的关键参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4K

The aim of this work is to analyze the operation of Junctionless Nanowire Transistors at liquid helium temperature, focusing the operation at linear regime. The drain current, the transconductance, the low field mobility, subthreshold slope, the interface trap density and the channel resistance are the key parameters under analysis.

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2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)

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