2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)最新文献

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Two Stream Deep Convolutional Neural Network for Eye State Recognition and Blink Detection 基于双流深度卷积神经网络的眼睛状态识别与眨眼检测
Ritabrata Sanyal, K. Chakrabarty
{"title":"Two Stream Deep Convolutional Neural Network for Eye State Recognition and Blink Detection","authors":"Ritabrata Sanyal, K. Chakrabarty","doi":"10.1109/IEMENTech48150.2019.8981102","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981102","url":null,"abstract":"Eye state recognition and blink detection has been an important research problem in various fields like driver fatigue and drowsiness measurement, dry eye detection, video spoofing detection, psychological status analysis and many others. Hence an automated eye state classification and blink detection algorithm which is robust to a variety of conditions is required for this purpose. To this end, we propose a novel approach towards detection of eye blinks from a video stream by classifying the eye state of every frame as open or closed. First the eyes are localized from a frame with robust state-of-the-art facial landmark detectors. Then binary masks of the eyes are computed to capture and focus on how much the eyes are open. We propose a novel two stream convolutional neural network model which is jointly trained with the extracted eye patches, their masks as inputs and the corresponding eye state as output. With the eye state predicted by our network for every frame, we model a Finite State Machine to check for blinks by comparing number of consecutive frames with eyes closed against average human blink duration. Extensive experimentation has been done on a various number of popular benchmark datasets both for eye state classification and blink detection. Our proposed eye state classifier achieves a 3.2% and 3.86% improvement over the state-of-the-art in terms of accuracy and equal error rate (EER). The blink detector achieves a 1–2 % improvement over the state-of-the-art in terms of precision and recall. Hence our algorithm outperforms the existing methods for eye state classification and blink detection to the best of our knowledge.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"82 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120858684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Design of Low Power circuit with CMOS Logic using adiabatic technique 用绝热技术设计低功耗CMOS逻辑电路
Saurav Dixit, R. Khatri, D. Mishra
{"title":"Design of Low Power circuit with CMOS Logic using adiabatic technique","authors":"Saurav Dixit, R. Khatri, D. Mishra","doi":"10.1109/IEMENTech48150.2019.8981316","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981316","url":null,"abstract":"In VLSI design the role of power consumption is an important concern in our life. The requirement for power reducing techniques is increasing day by day. This paper required CMOS logic family and this technique is called as ADIABATIC switch. The word “adiabatic” is described to conserve energy by the circuit. The adiabatic logic circuit reduces energy in dramatically form. The adiabatic switching and the conventional CMOS logic family are compared to the power dissipation of various parameters. Many research it's to be done by using the adiabatic switching principle. It technique proposed to designs and simulated at 180nm technology by using the Cadence tool.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133571381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FPGA Based Advance Parking Lot System 基于FPGA的高级停车场系统
Parul Vamney, D. K. Mishra, R. Khatri
{"title":"FPGA Based Advance Parking Lot System","authors":"Parul Vamney, D. K. Mishra, R. Khatri","doi":"10.1109/IEMENTech48150.2019.8981086","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981086","url":null,"abstract":"This paper describes the Advance Parking Lot system with the execution of VHDL code in behavioral modeling using the software tool Xilinx-14.7 with ISE simulator. The purpose of designing this system is to maintain systematic parking for four-wheelers and it is based on a Finite State Machine (FSM) module. The system gets more efficient through this design and less manual work required. With this type of parking lot system, it reduces the problem of parking area. In this paper, the work shown gives proper and more understanding of the parking system module. Here, paper investigates to optimize the parking lot system on FPGA board.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114377079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of FPGA based phase reconfiguration technique 基于FPGA的相位重构技术设计
Atiya Usmani, Eram Taslima, S. Khan
{"title":"Design of FPGA based phase reconfiguration technique","authors":"Atiya Usmani, Eram Taslima, S. Khan","doi":"10.1109/IEMENTech48150.2019.8981037","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981037","url":null,"abstract":"Synchronization is an important parameter for the validity of data in the high energy physics experiments. There are numerous sources of uncertainties in the large experiments like Large Hadron Collider. This disrupts the phase alignment between the clocks and corrupts the data. In this paper we have proposed a FPGA based phase reconfiguration technique and implemented on Intel Stratix-V FPGA. The technique monitors the phase difference of the order of nanoseconds between the clocks and recovers the data alignment. The study is focussed on the implementation and testing of the technique for rad-hard GBT protocol. Results of the signal integrity, eye diagram analysis, path delays, and measurements of resource utilisation are presented which are figure of merit for efficient system performance.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115147081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology 2019第三届电子、材料工程与纳米技术国际会议
{"title":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology","authors":"","doi":"10.1109/iementech48150.2019.8981003","DOIUrl":"https://doi.org/10.1109/iementech48150.2019.8981003","url":null,"abstract":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116382801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Suppression of Higher Order modes in Wearable Microstrip Antenna using Tuning fork shaped Resonator for Integration in WBAN 利用音叉谐振器抑制可穿戴微带天线的高阶模态
Srijita Chakraborty, Mrinmoy Chakraborty, N. Pathak
{"title":"Suppression of Higher Order modes in Wearable Microstrip Antenna using Tuning fork shaped Resonator for Integration in WBAN","authors":"Srijita Chakraborty, Mrinmoy Chakraborty, N. Pathak","doi":"10.1109/IEMENTech48150.2019.8981396","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981396","url":null,"abstract":"Controlling of radiation characteristics from the suppression of higher order modes by incorporation of resonators in wearable microstrip antenna has been implemented in the present work. In this paper, dual tuning fork shaped resonators are integrated with the microstrip line feed of a wearable microstrip antenna, resonant at Bluetooth band which resulted in controlling of higher order harmonics. A detailed illustration on various characteristics parameters of the resonator integrated wearable microstrip antenna has been presented for improved antenna performance in Wireless Body Area Network (WBAN).","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133648037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Free Space Optic communication using Optical AM, OOK-NRZ and OOK-RZ Modulation Techniques 利用光调幅、OOK-NRZ和OOK-RZ调制技术的自由空间光通信
Sagupha Parween, A. Tripathy
{"title":"Free Space Optic communication using Optical AM, OOK-NRZ and OOK-RZ Modulation Techniques","authors":"Sagupha Parween, A. Tripathy","doi":"10.1109/IEMENTech48150.2019.8981373","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981373","url":null,"abstract":"Free space optic (FSO) communication is recent work over optical fiber communication. In this paper, optical analog link communication using Amplitude modulation (AM) and optical digital link using On-Off Keying-Return to Zero (OOK-RZ) and On-Off Keying-Non Return to Zero (OOK-NRZ) modulation for FSO has been carried out using OptiSystem 16 software. A Continuous wave (CW) Laser is used as an optical source and modulated using selective modulation techniques. The transmitted and received signal is gradually analyzed by increasing the distance of the FSO channel, to get the proper distance measurement up to which the transmitted signal can be received without any error for the FSO system.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122127574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
[Copyright notice] (版权)
{"title":"[Copyright notice]","authors":"","doi":"10.1109/iementech48150.2019.8981201","DOIUrl":"https://doi.org/10.1109/iementech48150.2019.8981201","url":null,"abstract":"IEEE requires all authors or their employers who intend to publish in the IEEE Xplore Digital Library to provide a transfer of the copyright. Conference Organizers will continue to contact the IPR Office for all copyright needs and questions. MCE can support any question regarding the initial eCF registration form and packing list creation. Please visit the following URL to learn more about copyright transfer for your conference.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122872908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dependence of Threshold Voltage Shift on Material Composition for Si-Sir-Ge» Heterostructure p-MOSFET si - si - ge»异质结构p-MOSFET中阈值电压漂移对材料组成的影响
S. Mukhopadhyay, P. Halder, A. Deyasi
{"title":"Dependence of Threshold Voltage Shift on Material Composition for Si-Sir-Ge» Heterostructure p-MOSFET","authors":"S. Mukhopadhyay, P. Halder, A. Deyasi","doi":"10.1109/IEMENTech48150.2019.8981047","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981047","url":null,"abstract":"Shift of threshold voltage for Si-Si1-xGex heterostructure p-MOSFET is analytically evaluated for different substrate material composition. Poisson's equation is analytically solved subjected to practical range of tuning parameters and threshold is computed as a function of gate length in presence of body effect. Effect of High-K dielectric is calculated, and compared with that obtained for conventional SiO2 material. Result shows significant change of threshold in sub-micron gate length for different substrate compositions, as well as for high-K dielectrics, which can be effectively utilized for computing subthreshold current in presence of tunneling.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131271642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative Study of Sextupole and Quadrupole Magnetic Field in an ECR-PE Sputtering System ECR-PE溅射系统中六极与四极磁场的比较研究
S. Mukherjee, Shubham Majee, Suman Kundu, S. Kundu, S. Karmakar, G. S. Taki
{"title":"Comparative Study of Sextupole and Quadrupole Magnetic Field in an ECR-PE Sputtering System","authors":"S. Mukherjee, Shubham Majee, Suman Kundu, S. Kundu, S. Karmakar, G. S. Taki","doi":"10.1109/IEMENTech48150.2019.8981042","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981042","url":null,"abstract":"In the era of nanotechnology, VLSI industry employs various deposition methods and techniques to develop various sensors & devices, utilized in numerous applications. The commonly used deposition methods e.g., ALD, MBE, Vacuum Evaporation, CVD, PLD, Sputtering etc. are mostly dedicated for specific sets of deposition. Some of the methods are even extremely sophisticated, expensive or lack precision. Electron Cyclotron Resonance Plasma Enhanced (ECR-PE) multipurpose nano-film deposition system is one such unique apparatus that is in-house designed & developed to deposit high quality thin films of various metals and non-metals. Both, Plasma Enhanced Chemical Vapour Deposition (PE-CVD) arrangement and Sputter deposition arrangement is designed in the same plasma reactor considering permanent magnets. Although, the PE-CVD setup is already developed and made operational using a permanent magnet return yoke structure, the fabrication of the sputtering setup is yet to be carried out for its accommodation in the system. In this study, two annular permanent magnet assembly consisting of six (sextupole) and four (quadrupole) dipole magnets have been designed and simulated to study magnetic field distribution inside reactor for the sputter deposition arrangement.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117189364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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