si - si - ge»异质结构p-MOSFET中阈值电压漂移对材料组成的影响

2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI:10.1109/IEMENTech48150.2019.8981047

S. Mukhopadhyay, P. Halder, A. Deyasi

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引用次数: 0

摘要

分析了不同衬底材料组成下Si-Si1-xGex异质结构p-MOSFET的阈值电压漂移。根据实际调谐参数的范围对泊松方程进行了解析求解，并在存在体效应的情况下计算了门限作为门长的函数。计算了高k介电介质的影响，并与常规SiO2材料进行了比较。结果表明，不同衬底成分和高k介电体的亚微米栅极长度阈值变化显著，可以有效地用于计算隧穿存在下的亚阈值电流。

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Dependence of Threshold Voltage Shift on Material Composition for Si-Sir-Ge» Heterostructure p-MOSFET

Shift of threshold voltage for Si-Si1-xGex heterostructure p-MOSFET is analytically evaluated for different substrate material composition. Poisson's equation is analytically solved subjected to practical range of tuning parameters and threshold is computed as a function of gate length in presence of body effect. Effect of High-K dielectric is calculated, and compared with that obtained for conventional SiO2 material. Result shows significant change of threshold in sub-micron gate length for different substrate compositions, as well as for high-K dielectrics, which can be effectively utilized for computing subthreshold current in presence of tunneling.

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2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)

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