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Brainwave Sensed Chromo Therapy Based Meditation Hub 基于脑波感应色度疗法的冥想中心
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI: 10.1109/IEMENTech48150.2019.8981010
T. K. Rana, Bhawana Badlani, Megha Basu, C. Choudhuri, Soumi Karmakar
{"title":"Brainwave Sensed Chromo Therapy Based Meditation Hub","authors":"T. K. Rana, Bhawana Badlani, Megha Basu, C. Choudhuri, Soumi Karmakar","doi":"10.1109/IEMENTech48150.2019.8981010","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981010","url":null,"abstract":"A brainwave controlled meditation hub has been designed to give relief to people under mental stress. The meditation hub has been implemented with the help of tri-colour LED bulbs whose intensity and colour is controlled through microcontroller based system. Mental stress level is monitored using brainwave sensor. The unit is operated in two modes. Model is used to acquire meditation level to an ultimate state of mind. In the second mode different colour combination is used to heal from diseases.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121114800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study and Analysis of the cascoded LNA with and without using inductive degeneration at the common gate for WLAN applications 无线局域网应用中带和不带感应退化级联编码LNA的研究与分析
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI: 10.1109/IEMENTech48150.2019.8981049
Kajal Shrivastav, P. Maran
{"title":"Study and Analysis of the cascoded LNA with and without using inductive degeneration at the common gate for WLAN applications","authors":"Kajal Shrivastav, P. Maran","doi":"10.1109/IEMENTech48150.2019.8981049","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981049","url":null,"abstract":"This paper discusses about the study and analysis of the cascoded low noise amplifier (LNA) with and without using inductive degeneration at the common gate. The LNA design used here is for Wireless Local Area Network (WLAN) applications i.e. for 2.4 GHz. Gain, noise figure (NF) and power consumption are the vital LNA constraints. In this paper, a brief comparison between the LNA parameters for two different instances is done. This LNA design is simulated in Cadence Virtuoso RF Spectre in 180 nm technology. The results of the simulations for both the cases shows that the gain is 20.623 dB and 17.064 dB, NF is 0.85 dB and 1.011 dB, S11is −31.599 dB and −18.67 dB, power consumption is 1.2511 mW and 1.5916 mW respectively.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124817353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
AlGaN/GaN HEMT AC/DC Performance Analysis of Conventional and Gate Recessed MOS-HEMT With Temperature Variation 温度变化下常规MOS-HEMT和栅极凹槽MOS-HEMT的AlGaN/GaN交/直流性能分析
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI: 10.1109/IEMENTech48150.2019.8981125
Aasif Mohammad Bhat, Nawaz Shafi, C. Periasamy
{"title":"AlGaN/GaN HEMT AC/DC Performance Analysis of Conventional and Gate Recessed MOS-HEMT With Temperature Variation","authors":"Aasif Mohammad Bhat, Nawaz Shafi, C. Periasamy","doi":"10.1109/IEMENTech48150.2019.8981125","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981125","url":null,"abstract":"AlGaN/AIN/GaN based conventional and recessed gate high electron mobility transistors (HEMTs) having Al2O3 gate oxide have been investigated for comprehensive understanding of the effect of temperature on its AC and DC performance. Threshold voltage shows lower dependence on temperature as compared to other DC parameters. The recessed structure presents an opportunity to control its threshold voltage by proper etching depth as it selectively decreases two dimensional electron gas (2-DEG) only below gate to have precise control on channel. The threshold voltage of MOS-HEMT is −2.3 V which shifts upto 0.2 V for the different recessed gate HEMT etch depths however recess device has lower ON current of 0.7 A/mm with respect to 0.81 A/mm for conventional device. The simulations for both devices were performed on Atlas device simulation tool and results show a degradation of transfer characteristics, output characteristics, transconductance and frequency response with the increase in temperature. Therefore proper operating point is a must condition for appropriate and reliable operation of device.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114242674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of the Effect of Air Pollution on Solar Power Generation Using Sun Simulator 利用太阳模拟器研究大气污染对太阳能发电的影响
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI: 10.1109/IEMENTech48150.2019.8981361
Megha Basu, N. Sah, C. Choudhuri, Soumi Karmakar, T. K. Rana
{"title":"Study of the Effect of Air Pollution on Solar Power Generation Using Sun Simulator","authors":"Megha Basu, N. Sah, C. Choudhuri, Soumi Karmakar, T. K. Rana","doi":"10.1109/IEMENTech48150.2019.8981361","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981361","url":null,"abstract":"The basic objective of this project is to study the solar radiation pattern at different instants of time and produce such a pattern using an LED matrix and thereby calculate the power generated in each case. The second objective is studying the effect of level of air contamination or presence of pollutants in air, on solar power generated, using solar panel of a given size, and thereby evaluating the future prospects of solar energy as a substitute of non-renewable energy sources. This project helps us to calculate the size of solar panel required to generate given amount of power at different pollution levels.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114592487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Modified Canny Edge Detection Approach to Early Detection of Cancer Cell 一种改进的Canny边缘检测方法用于早期检测癌细胞
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI: 10.1109/IEMENTech48150.2019.8981100
Soumen Santra, Surajit Mandal, Kunal Das, J. Bhattacharjee, Avijit Roy
{"title":"A Modified Canny Edge Detection Approach to Early Detection of Cancer Cell","authors":"Soumen Santra, Surajit Mandal, Kunal Das, J. Bhattacharjee, Avijit Roy","doi":"10.1109/IEMENTech48150.2019.8981100","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981100","url":null,"abstract":"Canny Edge Detection technique is considered to be one of the most efficient techniques over other edge detection techniques. However this technique has some limitations; the computation time is very high because of its complexity in processing. When applied on medical images, sometimes it detects edges which are not desired. In this communication we present an edge detection technique which may be considered as a Modified Canny Edge Detection (MCED) technique. This work is developed using MATLAB and analysis is done using medical images where we can detect the malign portions easily through the segmentation portions.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129745444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design and Development of Atmega 2560 AVR Microcontroller Based Control and Monitoring System of a Two Jaw Slit 基于atmega2560avr单片机的双颚缝控制与监控系统的设计与开发
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI: 10.1109/IEMENTech48150.2019.8981123
S. Guha, Sumantra Bhattacharya, P. Y. Nabhiraj, C. Nandi
{"title":"Design and Development of Atmega 2560 AVR Microcontroller Based Control and Monitoring System of a Two Jaw Slit","authors":"S. Guha, Sumantra Bhattacharya, P. Y. Nabhiraj, C. Nandi","doi":"10.1109/IEMENTech48150.2019.8981123","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981123","url":null,"abstract":"The K-500 Superconducting Cyclotron of Variable Energy Cyclotron Centre (VECC) is designed for acceleration of multiply charged heavy as well as light positive ions at different energy levels. 14.45 GHz ECR Ion Source is used for the generation of these heavy gaseous as well as metallic ions which are being transported from the ECR plasma chamber to cyclotron beam chamber through the injection beam line. For higher charge state resolution and characterization of transverse beam two jaw slit has been indigenously designed and developed in VECC. This slit is installed before the analyzing magnet as one of the beam diagnostic elements. One Atmega 2560 MCU based control and monitoring system is designed and developed for the interfacing with the slit system. The control unit is capable to work both in local and remote mode where it interfaces with the NI FP modules and Lab-VIEW based centralized control system of ECR. This paper represents the detailed design parameters of the control and drive system as adopted for its operation along with other beam line elements.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128578677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Role of High-K Dielectric on Threshold Voltage Shift for Low-High Doping Profile in Short-Channel MOSFET 高k介电介质对短沟道MOSFET低-高掺杂谱线阈值电压偏移的影响
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI: 10.1109/IEMENTech48150.2019.8981020
R. Dhar, P. Halder, A. Deyasi
{"title":"Role of High-K Dielectric on Threshold Voltage Shift for Low-High Doping Profile in Short-Channel MOSFET","authors":"R. Dhar, P. Halder, A. Deyasi","doi":"10.1109/IEMENTech48150.2019.8981020","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981020","url":null,"abstract":"Threshold voltage shift on negative scale is obtained in short-channel MOSFET with low-high doping profile considering Hf02, Al2O3 and SiO2 as dielectric materials. Considering implant depth less than depletion depth along with lower concentration, Poisson's equation is solved subject to inversion condition where theoretical findings are compared with that obtained by ideal sheet charge approximation. Structural and doping parameters are altered within practical range, and corresponding voltage shift is measured. Both implant depth and depletion width are measured with substrate concentration variation. Results reveal that the enhancement MOSFET can be used for deletion mode of operation.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129461621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tropospheric Scintillation at Ku/Ka Band In Orographic Region 地形区Ku/Ka波段对流层闪烁
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI: 10.1109/IEMENTech48150.2019.8981105
Soumi Karmakar, Naomi Mallik, Megha Basu, T. K. Rana, S. Chakraborty
{"title":"Tropospheric Scintillation at Ku/Ka Band In Orographic Region","authors":"Soumi Karmakar, Naomi Mallik, Megha Basu, T. K. Rana, S. Chakraborty","doi":"10.1109/IEMENTech48150.2019.8981105","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981105","url":null,"abstract":"Mountain areas experience orographic precipitation. Orographic lift occurs when moist air mass is forced to move from low elevation to a higher elevation in mountain range. Wind pushes the rain cloud up the steep slope of hills. The rapid ascend of the clouds into the upper atmosphere hastens the cooling and helps vapours to condense. Moreover the orographic feature of the hills causes heavy rainfall during pre-monsoon and extended monsoon season. Due to turbulent irregularities of temperature, humidity and pressure in this region, random degradation in signal amplitude and phase occurs for low fade margin systems at frequencies higher than 10 GHz. It brings huge impact to achieve satisfactory signal quality for daily usage of satellite communication in orographic region. A study and analysis of this type of scintillation has been done here which is significant for Ku and Ka band for future day's communication.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123684131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ECG Monitoring System using180nm Technology 采用180nm技术的心电监护系统
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI: 10.1109/IEMENTech48150.2019.8981126
Kumari Srashti Singh, P. Bansod, R. Gamad
{"title":"ECG Monitoring System using180nm Technology","authors":"Kumari Srashti Singh, P. Bansod, R. Gamad","doi":"10.1109/IEMENTech48150.2019.8981126","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981126","url":null,"abstract":"This paper present analog front end comprising amplifier suitable for ECG acquisition. It is designed using 180nm CMOS SCL technology using Cadence Virtuoso environment with 1.8V power supply. ECG monitoring setup consists of protection circuit, an analog front end pre-amplifier, buffer, low pass filter and main amplifier. Protection circuit is used for protection from voltage surges which can occur between electrodes in electrocardiogram, during the application of defibrillator or due to electrostatic discharge (ESD) event. The ECG signal is amplified in stages, instrumentation amplifier and main amplifier. Low pass filter is designed for noise cancellation and buffer is used for impedance matching between two stages of ECG front end.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126213095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Environmental Condition based Auto-adjusted Robot Design for Agricultural Purpose 基于环境条件的农业自动调节机器人设计
2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Pub Date : 2019-08-01 DOI: 10.1109/IEMENTech48150.2019.8981011
Arijit Saha, Subhadeep Ghosh, S. Bhattacharyya, A. Deyasi
{"title":"Environmental Condition based Auto-adjusted Robot Design for Agricultural Purpose","authors":"Arijit Saha, Subhadeep Ghosh, S. Bhattacharyya, A. Deyasi","doi":"10.1109/IEMENTech48150.2019.8981011","DOIUrl":"https://doi.org/10.1109/IEMENTech48150.2019.8981011","url":null,"abstract":"Based on the climatic conditions like temperature and humidity of the soil, a novel robot is designed which can assist farmers for judging the requirement of water and fertilizer. An efficient algorithm is made for this purpose, which sets the threshold level for decision making purpose for different requisites; and also plot the real-time data based on the pre-defined optimum level. Owing to its movement capability, it is able to provide the water and fertilizer at the specific places till the reference level is reached, and then moves thereafter. It also uses remote sensing for determining insect stress and applies insecticides as per requirement. In our agricultural-dominated country, the present solution is a much-needed solution for harvesting problems.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130463122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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