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Эффективная генерация спина в графене на магнитной подложке при поглощении света в дальнем ИК диапазоне 磁性底座上石墨后有效振荡，远红外波段吸收光
Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.03.55631.4756
Константин Сергеевич Денисов, К.Ю. Голеницкий
{"title":"Эффективная генерация спина в графене на магнитной подложке при поглощении света в дальнем ИК диапазоне","authors":"Константин Сергеевич Денисов, К.Ю. Голеницкий","doi":"10.21883/ftp.2023.03.55631.4756","DOIUrl":"https://doi.org/10.21883/ftp.2023.03.55631.4756","url":null,"abstract":"The magnetic proximity effect is significant for atomically thin layers of two-dimensional materials. In this paper, we study the mechanisms of photogeneration spin-polarized charges in graphene on a magnetic insulator. The magnetic proximity effect and lowered symmetry at the interface enhance the spin response of graphene in the alternating electric field of the incident light. The first leads to spin splitting of the linear spectrum of Dirac electrons. The second increases the role of the spin-orbit interaction. The main mechanisms of photogenerated spin polarization have been considered, including spin flip intersubband and interband transitions, and their contribution to the absorption coefficient of graphene.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90469554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Измерения удельного сопротивления легированных азотом монокристаллов алмаза типа Ib методом Ван дер Пау с контактами Ti-Pt в интервале температур 573-1000 K 范·德·帕(Ib)用Ti-Pt (573-1000 K)的接触测量合金固态钻石的单位电阻
Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.05.56206.4748
С. Г. Буга, Геннадий Михайлович Квашнин, Михаил Сергеевич Кузнецов, Н. В. Корнилов, Н. В. Лупарев, М. Яо
{"title":"Измерения удельного сопротивления легированных азотом монокристаллов алмаза типа Ib методом Ван дер Пау с контактами Ti-Pt в интервале температур 573-1000 K","authors":"С. Г. Буга, Геннадий Михайлович Квашнин, Михаил Сергеевич Кузнецов, Н. В. Корнилов, Н. В. Лупарев, М. Яо","doi":"10.21883/ftp.2023.05.56206.4748","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56206.4748","url":null,"abstract":"The electrical resistivity values of square diamond plates doped with nitrogen in the form of C-centers with concentrations of 5; 55; 140 ppm are measured by the Van der Pauw method in the temperature range of 573-1000 K. Based on the results of the analysis of the primary measurement data, the resistivity values are calculated in the approximation of point ohmic Ti-Pt contacts, as well as taking into account the actual dimensions of triangular angular contacts. It was found that up to the temperature limit of 93050 K the differences in the resistivity values obtained by three different methods of the experimental data analysis do not exceed 3-7%. Ti-Pt contacts may be used in microelectronic and quantum optoelectronic devices based on nitrogen-doped diamonds.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88876509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ГКР-активные подложки на основе внедренных наночастиц Ag в объем c-Si: моделирование, технология, применение 在c-Si体积中引入的纳米粒子Ag活性支架:模拟、技术、应用
Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.04.55893.07k
А.А. Ермина, Н.С. Солодовченко, К.В. Пригода, В. С. Левицкий, С. И. Павлов, Ю.А. Жарова
{"title":"ГКР-активные подложки на основе внедренных наночастиц Ag в объем c-Si: моделирование, технология, применение","authors":"А.А. Ермина, Н.С. Солодовченко, К.В. Пригода, В. С. Левицкий, С. И. Павлов, Ю.А. Жарова","doi":"10.21883/ftp.2023.04.55893.07k","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55893.07k","url":null,"abstract":"A simple method for obtaining SiO2 : Ag : Si and Ag : Si hybrid nanostructures is presented. High-temperature treatment of an island film of Ag on the surface of c-Si makes it possible to preserve the plasmonic properties of Ag nanoparticles and protect them from external influences by coating them with a thermally grown layer of SiO2. The calculation of the electric field strength distribution in the structure with embedded Ag nanoparticles in c-Si demonstrates the presence of intrinsic “hot spots” at the corners of the nanoparticles, which leads to a maximum enhancement factor (~10^6) of Raman scattering. scattering. A numerical calculation of the dependence of the spectral position of a localized plasmon resonance on the geometry of structures can serve as a basis for their design in the future. Surface-enhanced Raman scattering spectroscopy showed reliable detection of the methyl orange from an aqueous solution at a concentration of 10^-5 M.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"85 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83905429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Разработка одномодового РОС-гетеролазера с выводом излучения под углом к поверхности структуры 单模异质激光器开发，从结构表面辐射输出
Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.05.56204.41k
В.Р. Барышев, Е.Д. Егорова, Н. С. Гинзбург, Е.Р. Кочаровская, А. М. Малкин, В. Ю. Заславский, С. В. Морозов, А.C. Сергеев
{"title":"Разработка одномодового РОС-гетеролазера с выводом излучения под углом к поверхности структуры","authors":"В.Р. Барышев, Е.Д. Егорова, Н. С. Гинзбург, Е.Р. Кочаровская, А. М. Малкин, В. Ю. Заславский, С. В. Морозов, А.C. Сергеев","doi":"10.21883/ftp.2023.05.56204.41k","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56204.41k","url":null,"abstract":"We study a possibility of implementing a single-mode DFB heterolaser with inclined (with respect to the surface of the structure) output of the generated radiation. We find the periodic dielectric structure shape that makes it possible to realize the distributed feedback for wavebeams propagating along the structure and, at the same time, to ensure the output of up to 70% of the generated radiation power in the inclined direction. Within the framework of the semiclassical quasi-optical model, the possibility of stationary lasing regimes is shown for finite lateral dimensions of the Bragg structure.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80652714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Слабая антилокализация в сильно разупорядоченном двумерном полуметалле в квантовой яме HgTe HgTe量子坑中高度有序的二维半金属中的弱抗原
Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.05.56208.5395
Е. Б. Ольшанецкий, З. Д. Квон, Николай Николаевич Михайлов
{"title":"Слабая антилокализация в сильно разупорядоченном двумерном полуметалле в квантовой яме HgTe","authors":"Е. Б. Ольшанецкий, З. Д. Квон, Николай Николаевич Михайлов","doi":"10.21883/ftp.2023.05.56208.5395","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56208.5395","url":null,"abstract":"Weak localization in a highly disordered quantum well CdxHg1−xTe/HgTe/CdxHg1−xTe with a thickness of d = 20 nm is experimentally investigated. An analysis is made of the anomalous positive magnetoresistance (APM) caused by the suppression of the interference correction to the conductivity by a magnetic field on both sides of the charge neutrality point: for a two-dimensional semimetal and for a two-dimensional electronic metal. For the same values of resistivity, the APM peak in a 2D semimetal has a much wider width than in a 2D electron gas. A quantitative comparison of the obtained results with the theory allows, in particular, to conclude that the intensity of carrier transitions between subsystems in the 2D semimetal binary system is maximum near the charge neutrality point, where the concentrations of electrons and holes are close, and decreases as the difference in concentrations increases.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"2015 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87807718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Состояния кремниевых нано-кластеров, содержащих примеси углерода 含碳的硅纳米集群状态
Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.02.55330.3335
М. Ю. Ташметов, Ш. Махкамов, Ф.Т. Умарова, А Б Нормуродов, Н.Т. Сулайманов, А.В. Хугаев, Х.М. Холмедов
{"title":"Состояния кремниевых нано-кластеров, содержащих примеси углерода","authors":"М. Ю. Ташметов, Ш. Махкамов, Ф.Т. Умарова, А Б Нормуродов, Н.Т. Сулайманов, А.В. Хугаев, Х.М. Холмедов","doi":"10.21883/ftp.2023.02.55330.3335","DOIUrl":"https://doi.org/10.21883/ftp.2023.02.55330.3335","url":null,"abstract":"Abstract The structural and electronic states of defective complexes in the Si29 cluster with the participation of carbon and hydrogen atoms were determined by the method of non-conventional strong binding (MNSB) in combination with the method of molecular dynamics. It is shown that carbon atoms in silicon clusters form a bridge bond with two silicon atoms and localized in a hexagonal position at the center of the cell, forming a defect of the Si29:Ci type. The introduction of hydrogen into a silicon cluster results in the formation of a defective Ci-H-Si complex and a decrease of binding energy of the Si29:Ci defect. Based on the calculations, it was found that presence of leads to carbon gives shallow levels in the band gap of nano-silicon, and the defective carbon-hydrogen complex in a hydrogenated cluster, depending on the charge state of the defective complex. Moreover this exhibits both deep and shallow levels.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"122 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88038484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Плазмохимическое осаждение гидрогенизованных пленок DLC с различным содержанием водорода и sp-=SUP=-3-=/SUP=--гибридного углерода 氢和sp-=SUP=-3-=/SUP=-混合碳的等离子化学沉积
Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.05.56195.09k
А. И. Охапкин, М. Н. Дроздов, П.А. Юнин, С.А. Краев, Д.Б. Радищев
{"title":"Плазмохимическое осаждение гидрогенизованных пленок DLC с различным содержанием водорода и sp-=SUP=-3-=/SUP=--гибридного углерода","authors":"А. И. Охапкин, М. Н. Дроздов, П.А. Юнин, С.А. Краев, Д.Б. Радищев","doi":"10.21883/ftp.2023.05.56195.09k","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56195.09k","url":null,"abstract":"The influence of methane plasma parameters on the deposition rate and on the content of the hydrogen and the sp3-carbon fraction in hydrogenated diamond-like carbon films (DLC) was investigated. It was shown that the proportion of the sp3-carbon fraction mainly depends on the inductive power and the argon addition to the plasma; the latter also contributes to a decrease of hydrogen in the films.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"128 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85598288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Повышение радиационной стойкости интегральных схем на основе биполярных транзисторов обработкой в водородной электронно циклотронно резонансной плазме и геттерированием Si-пластин 双极电子回旋质共振等离子体中的双极晶体管辐射强度提高
Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.03.55633.4467
Е. А. Полушкин, С.В. Нефедьев, О.А. Солтанович, Анастасия Викторовна Ковальчук, С. Ю. Шаповал
{"title":"Повышение радиационной стойкости интегральных схем на основе биполярных транзисторов обработкой в водородной электронно циклотронно резонансной плазме и геттерированием Si-пластин","authors":"Е. А. Полушкин, С.В. Нефедьев, О.А. Солтанович, Анастасия Викторовна Ковальчук, С. Ю. Шаповал","doi":"10.21883/ftp.2023.03.55633.4467","DOIUrl":"https://doi.org/10.21883/ftp.2023.03.55633.4467","url":null,"abstract":"We demonstrate significant improvement of the radiation immunity of the integrated circuits based on silicon bipolar transistors. Strong decrease of the current gain degradation and significant yield improvement after high-energy gamma irradiation are both shown. This was achieved by development of efficient hydrogenation process for the silicon bulk and the surface dielectric layer using electron cyclotron resonance (ECR) plasma, as well as implementation of effective Si-plate gettering option.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82397400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Однофотонное излучение InGaAs-квантовой точки, выращенной на подложке (111)B GaAs 单光子InGaAs-量子点辐射，生长在底座(111)B GaAs上
Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.04.55897.12k
И.А. Деребезов, В.А. Гайслер, А.В. Гайслер, Д. В. Дмитриев, А.И. Торопов, S. Rodt, M. von Helversen, S. Reitzenstein
{"title":"Однофотонное излучение InGaAs-квантовой точки, выращенной на подложке (111)B GaAs","authors":"И.А. Деребезов, В.А. Гайслер, А.В. Гайслер, Д. В. Дмитриев, А.И. Торопов, S. Rodt, M. von Helversen, S. Reitzenstein","doi":"10.21883/ftp.2023.04.55897.12k","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55897.12k","url":null,"abstract":"The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75735078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Разыгрывание полярного угла рассеяния электронов на ионах примеси при моделировании процессов переноса заряда в полупроводниках методом Монте-Карло 用蒙特卡洛半导体半导体模拟电子散射过程中电子散射的极角
Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.01.54925.4425
В. М. Борздов, А. В. Борздов, Ю.Г. Василевский
{"title":"Разыгрывание полярного угла рассеяния электронов на ионах примеси при моделировании процессов переноса заряда в полупроводниках методом Монте-Карло","authors":"В. М. Борздов, А. В. Борздов, Ю.Г. Василевский","doi":"10.21883/ftp.2023.01.54925.4425","DOIUrl":"https://doi.org/10.21883/ftp.2023.01.54925.4425","url":null,"abstract":"Procedures of polar scattering angle simulation for electron scattering on ionized impurities are examined for Brooks-Herring, Conwell-Weisskopf and Ridley models as the most frequently used in Monte Carlo simulation of charge carrier transport in semiconductors. A more correct procedure for polar scattering angle simulation is proposed for Ridley model. Peculiarities of scattering angle distribution densities calculated in the framework of regarded models are analyzed taking silicon as an example. Comparison of electron mobility calculated by ensemble Monte Carlo method using considered models has been done for doped silicon at 300 K and for constant electric field strength F = 7∙104 V/m","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"123 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76201624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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