Физика и техника полупроводников最新文献_第3页

Формирование наноостровков InAs на поверхности кремния и гетероструктур на их основе

Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.05.56199.26k

И.В. Илькив, В.В. Лендяшова, Б.Б. Бородин, В.Г. Талалаев, Т. Шугабаев, Р.Р. Резник, Г. Э. Цырлин

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Оптическое возбуждение спин-триплетных состояний двухэлектронных доноров в кремнии 硅二电子供体自旋三倍状态的光激发

Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.05.56198.18k

В.В. Цыпленков, Р.Х. Жукавин, В.Н. Шастин

{"title":"Оптическое возбуждение спин-триплетных состояний двухэлектронных доноров в кремнии","authors":"В.В. Цыпленков, Р.Х. Жукавин, В.Н. Шастин","doi":"10.21883/ftp.2023.05.56198.18k","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56198.18k","url":null,"abstract":"In this paper, we propose a method for resonant optical excitation of ortho states of two-electron donors in silicon, direct transitions to which from the ground state are extremely suppressed in case of a weak spin-orbit coupling. Excitation is proposed to be carried out using the points of anti-crossing of ortho and para states under conditions of uniaxial stress of the crystal. In these points the states cannot be unambiguously assigned to any group of states with a certain spin, as a result of which the optical transition becomes allowed. The structure of the energy levels of two-electron impurities is such that the excitation of such state almost unambiguously leads to the population of the underlying ortho-type state, which is expected to be very long-lived in the case of weak spin-orbit coupling. In the present work, theoretical estimates of the cross sections for optical transitions in the vicinity of the level anticrossing point as a function of strain for strong and weak spin-orbit coupling are made.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"67 4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87759490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Исследование фотолюминесценции в системе InGaAs/GaAs с квантовыми точками спектрального диапазона 1100 нм InGaAs/GaAs光照发光研究，量子光谱波段为1100纳米

Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.01.54932.4184

А. В. Бабичев, С.Д. Комаров, Ю.С. Ткач, В.Н. Неведомский, С.А. Блохин, Н.В. Крыжановская, А.Г. Гладышев, Л.Я. Карачинский, И.И. Новиков

{"title":"Исследование фотолюминесценции в системе InGaAs/GaAs с квантовыми точками спектрального диапазона 1100 нм","authors":"А. В. Бабичев, С.Д. Комаров, Ю.С. Ткач, В.Н. Неведомский, С.А. Блохин, Н.В. Крыжановская, А.Г. Гладышев, Л.Я. Карачинский, И.И. Новиков","doi":"10.21883/ftp.2023.01.54932.4184","DOIUrl":"https://doi.org/10.21883/ftp.2023.01.54932.4184","url":null,"abstract":"The results of studying the optical properties of InGaAs quantum dots are presented. Single-layer InGaAs quantum dots with a height of 5.3, 3.6 and 2.6 monolayers, as well as three-stacked layers of tunnel-uncoupled quantum dots with a height of 2.6 monolayers were formed by molecular–beam epitaxy according to the Stransky-Krastanov mechanism on GaAs substrates, using the partial capping and annealing technique. A decrease in the size of quantum dots makes it possible to carry out a blueshift of the photoluminescence spectrum maximum from 1200 nm to 1090 nm, and an increase in the number of QD layers makes it possible to compensate for the decrease in the peak intensity. It is shown that this type of quantum dots is suitable for creating the lasers active regions with a vertical microcavity for neuromorphic computing.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87271961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Снижение плотности дислокаций в метаморфных гетероструктурах путем оптимизации конструкции буферного слоя с нелинейным профилем изменением состава 通过优化具有非线性成分变化的缓冲层结构来降低变形异质结构中的位置密度

Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.03.55627.4915

М. Ю. Чернов, В. А. Соловьев, Сергей Владимирович Иванов

{"title":"Снижение плотности дислокаций в метаморфных гетероструктурах путем оптимизации конструкции буферного слоя с нелинейным профилем изменением состава","authors":"М. Ю. Чернов, В. А. Соловьев, Сергей Владимирович Иванов","doi":"10.21883/ftp.2023.03.55627.4915","DOIUrl":"https://doi.org/10.21883/ftp.2023.03.55627.4915","url":null,"abstract":"Equilibrium distributions of misfit dislocation density along the growth direction of metamorphic buffer layers InxAl1-xAs/GaAs with maximum In content xmax ≥ 0.77 and different non-linear graded composition profiles (x ∝ z1/n) are calculated. The effect of the initial In composition (xmin) of InxAl1-xAs buffer layer with convex-graded (n = 2) composition profile on misfit dislocation density as well as amount of residual stresses at its top part is considered. Using computational approach, it was shown that a dislocation-free region is formed under thin tensile-strained GaAs layer (1–10 nm) inserted into InAlAs metamorphic buffer layer, which agrees with experimental data obtained early by transmission electron microscopy. Novel non-linear graded composition profile of metamorphic buffer layer has been proposed, which results in twice reduction of misfit dislocation density as compared to the convex-graded one. In addition, equilibrium distributions of misfit dislocation density in the HEMT heterostructures with two-dimensional electron channel In0.75Ga0.25As/In0.75Al0.25As, which are based on InxAl1-xAs/GaAs metamorphic buffer layer of various designs, are calculated. The values of inverse steps (∆), representing the difference between the maximum In content of InxAl1-xAs (xmax) and In content of In0.75Al0.25As virtual substrate, at which relaxation of the elastic strains in 2D channel In0.75Ga0.25As/In0.75Al0.25As doesn’t occur, are calculated for metamorphic buffer layers InxAl1-xAs with convex-graded and optimized non-linear graded composition profiles.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"56 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88521955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Влияние адсорбированной макромолекулы на подвижность носителей в однослойном графене: модель оборванных связей 吸附型大分子对单层graffin载体流动性的影响:断裂连接模型

Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.05.56210.4958

С. И. Давыдов, Александр Александрович Лебедев

引用次数: 0

Расчет транспортных характеристик двуслойного графена с различным углом разориентации 双层郡运输特性计算，方向不同

Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.05.56203.36k

С.В. Хазанова, В. В. Савельев

引用次数: 0

Особенности структуры поверхности и поверхностного электронного транспорта в коррелированном топологическом изоляторе SmB-=SUP=-VI-=/SUP=- 在相关的拓扑绝缘体SmB-=SUP=-VI-=/SUP -

Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.04.55891.02k

Е.А. Артёмов, А В Мантузов, В.С. Журкин, А Д Божко, О.С. Кудрявцев, Б. В. Андрюшечкин, Владимир Михайлович Шевлюга, Н. Ю. Шицевалова, В. Б. Филипов, В. В. Глушков

{"title":"Особенности структуры поверхности и поверхностного электронного транспорта в коррелированном топологическом изоляторе SmB-=SUP=-VI-=/SUP=-","authors":"Е.А. Артёмов, А В Мантузов, В.С. Журкин, А Д Божко, О.С. Кудрявцев, Б. В. Андрюшечкин, Владимир Михайлович Шевлюга, Н. Ю. Шицевалова, В. Б. Филипов, В. В. Глушков","doi":"10.21883/ftp.2023.04.55891.02k","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55891.02k","url":null,"abstract":"We present the results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InAs quantum dots. The morphological, structural, and optical properties of the grown nanostructures have been studied. It is important to note that the emission from quantum dots is observed in the wavelength range from 750 to 970 nm. Assumptions about the nature of short-wavelength emission from quantum dots are formulated. In particular, one of the reasons may be a significant desorption of indium atoms and the presence of gallium atoms in catalyst drops during the growth at a substrate temperature of 510◦C. The proposed technology opens up new possibilities for integration direct-gap III−V materials with a silicon platform for various applications in photonics and quantum communications.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73727075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Энергетическая структура мультиэкситонов в квантовых проволоках с продольным ограничивающим потенциалом 量子线圈多项式能量结构，纵向限制电位

Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.04.55899.20k

Рави Кумар, М П Теленков, Ю А Митягин

引用次数: 0

Широкополосное излучение суперлюминесцентных диодов на основе многослойных структур с квантовыми яма-точками InGaAs/GaAs 宽带超发光二极管辐射，基于多层结构，量子点为InGaAs/GaAs。

Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.04.55902.5262

Максим Владимирович Максимов, Ю.М. Шерняков, Г.О. Корнышов, О.И. Симчук, Н.Ю. Гордеев, А.А. Бекман, А.С. Паюсов, С.А. Минтаиров, Н. А. Калюжный, М.М. Кулагина, А. Е. Жуков

引用次数: 0

Влияние морфологии поверхности и границ раздела на продольную фононную теплопроводность в тонкопленочных структурах Ge(001) и Si/Ge(001) 表面和边界形态学对薄膜结构Ge(001)和Si/Ge(001)中的纵向背景热传导的影响

Физика и техника полупроводников Pub Date : 2023-01-01 DOI: 10.21883/ftp.2023.03.55624.4742

А.Л. Хомец, Игорь Васильевич Сафронов, А Б Филонов, Д Б Мигас

{"title":"Влияние морфологии поверхности и границ раздела на продольную фононную теплопроводность в тонкопленочных структурах Ge(001) и Si/Ge(001)","authors":"А.Л. Хомец, Игорь Васильевич Сафронов, А Б Филонов, Д Б Мигас","doi":"10.21883/ftp.2023.03.55624.4742","DOIUrl":"https://doi.org/10.21883/ftp.2023.03.55624.4742","url":null,"abstract":"In this work the method of non-equilibrium molecular dynamics was used to study the longitudinal phonon thermal transport at 300 K in nanoscale homogenous Ge(001) and lay- ered Si/Ge(001) thin films with p(2 × 1) surface reconstruction along different directions. The appearance of thermal transport anysotropy in the films under consideration, which is due to both the surface morphology and sharp Si/Ge interfaces, has been established. For the direction when the dimers and Si−Ge bonds at the interface lie in a plane parallel to the direction of the heat flow, the lowest thermal conductivity is observed (∼ 5−18 W/(m · K) in the range from ∼ 1 to 27 nm). It is shown that for films with thicknesses of more than 13 nm for all directions, layered films have a lower thermal conductivity compared to homogenous ones. In this case, the role of the surface morphology and interfaces is reduced to different degrees of phonon localization and compensation for more heat-conducting Si layers, respectively.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"101 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75811832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0