Максим Владимирович Максимов, Ю.М. Шерняков, Г.О. Корнышов, О.И. Симчук, Н.Ю. Гордеев, А.А. Бекман, А.С. Паюсов, С.А. Минтаиров, Н. А. Калюжный, М.М. Кулагина, А. Е. Жуков
{"title":"宽带超发光二极管辐射，基于多层结构，量子点为InGaAs/GaAs。","authors":"Максим Владимирович Максимов, Ю.М. Шерняков, Г.О. Корнышов, О.И. Симчук, Н.Ю. Гордеев, А.А. Бекман, А.С. Паюсов, С.А. Минтаиров, Н. А. Калюжный, М.М. Кулагина, А. Е. Жуков","doi":"10.21883/ftp.2023.04.55902.5262","DOIUrl":null,"url":null,"abstract":"We have studied superluminescent diodes with simplified design and active region based on 5 or 7 layers of InGaAs/GaAs quantum well-dots (QWDs). Emission peaks of the individual QWD layers are shifted with respect to each other by 15-35 nm to provide as wide as possible emission line in a superluminescent mode with central wavelength of about 1 µm without significant spectral dips. For superluminescent diodes with the active region based on 5 and 7 QWD layers, the maximal value of full width at half maximum of emission spectrum was 92 and 103 nm respectively.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"96 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Широкополосное излучение суперлюминесцентных диодов на основе многослойных структур с квантовыми яма-точками InGaAs/GaAs\",\"authors\":\"Максим Владимирович Максимов, Ю.М. Шерняков, Г.О. Корнышов, О.И. Симчук, Н.Ю. Гордеев, А.А. Бекман, А.С. Паюсов, С.А. Минтаиров, Н. А. Калюжный, М.М. Кулагина, А. Е. Жуков\",\"doi\":\"10.21883/ftp.2023.04.55902.5262\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied superluminescent diodes with simplified design and active region based on 5 or 7 layers of InGaAs/GaAs quantum well-dots (QWDs). Emission peaks of the individual QWD layers are shifted with respect to each other by 15-35 nm to provide as wide as possible emission line in a superluminescent mode with central wavelength of about 1 µm without significant spectral dips. For superluminescent diodes with the active region based on 5 and 7 QWD layers, the maximal value of full width at half maximum of emission spectrum was 92 and 103 nm respectively.\",\"PeriodicalId\":24054,\"journal\":{\"name\":\"Физика и техника полупроводников\",\"volume\":\"96 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Физика и техника полупроводников\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21883/ftp.2023.04.55902.5262\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Физика и техника полупроводников","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/ftp.2023.04.55902.5262","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Широкополосное излучение суперлюминесцентных диодов на основе многослойных структур с квантовыми яма-точками InGaAs/GaAs
We have studied superluminescent diodes with simplified design and active region based on 5 or 7 layers of InGaAs/GaAs quantum well-dots (QWDs). Emission peaks of the individual QWD layers are shifted with respect to each other by 15-35 nm to provide as wide as possible emission line in a superluminescent mode with central wavelength of about 1 µm without significant spectral dips. For superluminescent diodes with the active region based on 5 and 7 QWD layers, the maximal value of full width at half maximum of emission spectrum was 92 and 103 nm respectively.
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