Измерения удельного сопротивления легированных азотом монокристаллов алмаза типа Ib методом Ван дер Пау с контактами Ti-Pt в интервале температур 573-1000 K

Физика и техника полупроводников Pub Date : 2023-01-01 DOI:10.21883/ftp.2023.05.56206.4748

С. Г. Буга, Геннадий Михайлович Квашнин, Михаил Сергеевич Кузнецов, Н. В. Корнилов, Н. В. Лупарев, М. Яо

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Abstract

The electrical resistivity values of square diamond plates doped with nitrogen in the form of C-centers with concentrations of 5; 55; 140 ppm are measured by the Van der Pauw method in the temperature range of 573-1000 K. Based on the results of the analysis of the primary measurement data, the resistivity values are calculated in the approximation of point ohmic Ti-Pt contacts, as well as taking into account the actual dimensions of triangular angular contacts. It was found that up to the temperature limit of 93050 K the differences in the resistivity values obtained by three different methods of the experimental data analysis do not exceed 3-7%. Ti-Pt contacts may be used in microelectronic and quantum optoelectronic devices based on nitrogen-doped diamonds.

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范·德·帕(Ib)用Ti-Pt (573-1000 K)的接触测量合金固态钻石的单位电阻

掺杂浓度为5的c -中心形式氮的方形金刚石片的电阻率值;55;在573-1000 K的温度范围内，用范德泡法测量了140 ppm。在对原始测量数据分析的基础上，在考虑三角形角触点实际尺寸的情况下，对点欧姆Ti-Pt触点进行近似计算，计算出电阻率值。结果表明，在93050 K的极限温度下，三种不同的实验数据分析方法得到的电阻率值的差异不超过3-7%。Ti-Pt触点可用于基于氮掺杂金刚石的微电子和量子光电器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Физика и техника полупроводников

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