И.А. Деребезов, В.А. Гайслер, А.В. Гайслер, Д. В. Дмитриев, А.И. Торопов, S. Rodt, M. von Helversen, S. Reitzenstein
{"title":"单光子InGaAs-量子点辐射，生长在底座(111)B GaAs上","authors":"И.А. Деребезов, В.А. Гайслер, А.В. Гайслер, Д. В. Дмитриев, А.И. Торопов, S. Rodt, M. von Helversen, S. Reitzenstein","doi":"10.21883/ftp.2023.04.55897.12k","DOIUrl":null,"url":null,"abstract":"The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Однофотонное излучение InGaAs-квантовой точки, выращенной на подложке (111)B GaAs\",\"authors\":\"И.А. Деребезов, В.А. Гайслер, А.В. Гайслер, Д. В. Дмитриев, А.И. Торопов, S. Rodt, M. von Helversen, S. Reitzenstein\",\"doi\":\"10.21883/ftp.2023.04.55897.12k\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.\",\"PeriodicalId\":24054,\"journal\":{\"name\":\"Физика и техника полупроводников\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Физика и техника полупроводников\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21883/ftp.2023.04.55897.12k\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Физика и техника полупроводников","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/ftp.2023.04.55897.12k","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Однофотонное излучение InGaAs-квантовой точки, выращенной на подложке (111)B GaAs
The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.
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