С. Г. Буга, Геннадий Михайлович Квашнин, Михаил Сергеевич Кузнецов, Н. В. Корнилов, Н. В. Лупарев, М. Яо
{"title":"范·德·帕(Ib)用Ti-Pt (573-1000 K)的接触测量合金固态钻石的单位电阻","authors":"С. Г. Буга, Геннадий Михайлович Квашнин, Михаил Сергеевич Кузнецов, Н. В. Корнилов, Н. В. Лупарев, М. Яо","doi":"10.21883/ftp.2023.05.56206.4748","DOIUrl":null,"url":null,"abstract":"The electrical resistivity values of square diamond plates doped with nitrogen in the form of C-centers with concentrations of 5; 55; 140 ppm are measured by the Van der Pauw method in the temperature range of 573-1000 K. Based on the results of the analysis of the primary measurement data, the resistivity values are calculated in the approximation of point ohmic Ti-Pt contacts, as well as taking into account the actual dimensions of triangular angular contacts. It was found that up to the temperature limit of 93050 K the differences in the resistivity values obtained by three different methods of the experimental data analysis do not exceed 3-7%. Ti-Pt contacts may be used in microelectronic and quantum optoelectronic devices based on nitrogen-doped diamonds.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"4 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Измерения удельного сопротивления легированных азотом монокристаллов алмаза типа Ib методом Ван дер Пау с контактами Ti-Pt в интервале температур 573-1000 K\",\"authors\":\"С. Г. Буга, Геннадий Михайлович Квашнин, Михаил Сергеевич Кузнецов, Н. В. Корнилов, Н. В. Лупарев, М. Яо\",\"doi\":\"10.21883/ftp.2023.05.56206.4748\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical resistivity values of square diamond plates doped with nitrogen in the form of C-centers with concentrations of 5; 55; 140 ppm are measured by the Van der Pauw method in the temperature range of 573-1000 K. Based on the results of the analysis of the primary measurement data, the resistivity values are calculated in the approximation of point ohmic Ti-Pt contacts, as well as taking into account the actual dimensions of triangular angular contacts. It was found that up to the temperature limit of 93050 K the differences in the resistivity values obtained by three different methods of the experimental data analysis do not exceed 3-7%. Ti-Pt contacts may be used in microelectronic and quantum optoelectronic devices based on nitrogen-doped diamonds.\",\"PeriodicalId\":24054,\"journal\":{\"name\":\"Физика и техника полупроводников\",\"volume\":\"4 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Физика и техника полупроводников\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21883/ftp.2023.05.56206.4748\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Физика и техника полупроводников","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/ftp.2023.05.56206.4748","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Измерения удельного сопротивления легированных азотом монокристаллов алмаза типа Ib методом Ван дер Пау с контактами Ti-Pt в интервале температур 573-1000 K
The electrical resistivity values of square diamond plates doped with nitrogen in the form of C-centers with concentrations of 5; 55; 140 ppm are measured by the Van der Pauw method in the temperature range of 573-1000 K. Based on the results of the analysis of the primary measurement data, the resistivity values are calculated in the approximation of point ohmic Ti-Pt contacts, as well as taking into account the actual dimensions of triangular angular contacts. It was found that up to the temperature limit of 93050 K the differences in the resistivity values obtained by three different methods of the experimental data analysis do not exceed 3-7%. Ti-Pt contacts may be used in microelectronic and quantum optoelectronic devices based on nitrogen-doped diamonds.
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