Повышение радиационной стойкости интегральных схем на основе биполярных транзисторов обработкой в водородной электронно циклотронно резонансной плазме и геттерированием Si-пластин

We demonstrate significant improvement of the radiation immunity of the integrated circuits based on silicon bipolar transistors. Strong decrease of the current gain degradation and significant yield improvement after high-energy gamma irradiation are both shown. This was achieved by development of efficient hydrogenation process for the silicon bulk and the surface dielectric layer using electron cyclotron resonance (ECR) plasma, as well as implementation of effective Si-plate gettering option.