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Journal De Physique Iii最新文献

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Dérives thermiques du capteur de pression capacitif microélectronique 微电子电容式压力传感器的热漂移
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997206
A. Ettouhami, A. Essaîd, N. Ouakrim, L. Michel, M. Limouri
{"title":"Dérives thermiques du capteur de pression capacitif microélectronique","authors":"A. Ettouhami, A. Essaîd, N. Ouakrim, L. Michel, M. Limouri","doi":"10.1051/JP3:1997206","DOIUrl":"https://doi.org/10.1051/JP3:1997206","url":null,"abstract":"Les derives thermiques du capteur de pression capacitif microelectronique sont analysees par la methode des elements finis. Differentes conditions aux limites representant une large gamme de support de capteur ont ete envisagees: capteur a base libre, capteur a base fixe et capteur colle a un support d'alumine. Dans chaque cas, la reponse thermique du capteur a ete determinee en fonction des dimensions du capteur afin de repousser la temperature de flambage et reduire en consequence la sensibilite thermique. Pour certains capteurs tres sensibles a la pression, cette temperature est tres faible et les derives thermiques sont importantes. Ainsi un capteur a base fixe (membrane de rayon 1000 μm, et epaisseur 12 μm, distance entre armatures 3,5 μm) presente une sensibilite thermique de -200 Pa °C -1 au-dessus de 80 °C. Un capteur colle a un support d'alumine, de membrane plus large (rayon 1800 μm) possede une sensibilite thermique de 3,1 Pa °C -1 au-dessous de -100 °C.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122196859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthèse de la commande d'un onduleur de courant triphasé 三相电流逆变器控制的综合
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997212
J. Cambronne, J. Hautier
{"title":"Synthèse de la commande d'un onduleur de courant triphasé","authors":"J. Cambronne, J. Hautier","doi":"10.1051/JP3:1997212","DOIUrl":"https://doi.org/10.1051/JP3:1997212","url":null,"abstract":"Apres avoir rappele les concepts fondamentaux du formalisme de modelisation utilise, les auteurs proposent une methode de determination des sequences optimales de commande du montage a deux cellules de commutation a trois interrupteurs; une telle association est souvent utilisee comme commutateur de courant ou redresseur de tension. Cet article reprend une demarche similaire a une precedente presentation a propos de l'onduleur de tension; si la methodologie reste la meme, il apparait toutefois des particularites sur la maniere de definir l'optimisation des sequences en fonction des contraintes a priori, telles que la repartition des courants dans les semi-conducteurs ou la limitation du nombre de commutations. Sur le plan theorique, la demarche est ainsi systematique et s'inscrit dans un cadre general deja decrit; sur le plan pratique, tout utilisateur peut trouver les idees necessaires si une mise en oeuvre de ce convertisseur est envisagee, d'autant que le commutateur de courant offre certains avantages par rapport a l'onduleur de tension, notamment sur le plan de la securite en forte puissance.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122788668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mechanical Properties and Dislocation Dynamics in III-V Compounds III-V类化合物的力学性能和位错动力学
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997198
I. Yonenaga
{"title":"Mechanical Properties and Dislocation Dynamics in III-V Compounds","authors":"I. Yonenaga","doi":"10.1051/JP3:1997198","DOIUrl":"https://doi.org/10.1051/JP3:1997198","url":null,"abstract":"The dynamic activities of dislocations and the mechanical properties of various III-V compound semiconductors with a sphalerite structure are reviewed, including current results. Macroscopic stress-strain characteristics and yield strength are described quantitatively in terms of dislocation dynamics on the basis of knowledge of the dynamic behaviour of individual dislocations in these compounds. Various impurities in the compounds affect the mechanical strength through two kinds of effects on individual dislocations: one is the modification of dislocation mobility in glide motion and the other is the immobilization of dislocations. The velocities of rate controlling dislocations during deformation are deduced from analysis of the dynamic state of dislocations.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123125627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 48
An ab initio study of the 90° partial dislocation core in diamond 金刚石中90°部分位错核的从头算研究
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997193
P. Sitch, R. Jones, S. Öberg, M. Heggie
{"title":"An ab initio study of the 90° partial dislocation core in diamond","authors":"P. Sitch, R. Jones, S. Öberg, M. Heggie","doi":"10.1051/JP3:1997193","DOIUrl":"https://doi.org/10.1051/JP3:1997193","url":null,"abstract":"The electronic and structural properties of the 90° glide partial dislocation in diamond are investigated using an ab initio local density functional cluster method. The core C–C bond is found to be reconstructed with a bond length 5% longer than that in bulk diamond. The formation and migration energy of the kink on the dislocation are calculated to be 0.32 and 2.97 eV respectively. Further, the shift of the gap levels during kink motion suggests that p-type doping will lead to an increase in the mobility of the partial.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127031382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors 半导体扩展缺陷局域态的深能级瞬态光谱研究
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997194
H. Hedemann, W. Schröter
{"title":"Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors","authors":"H. Hedemann, W. Schröter","doi":"10.1051/JP3:1997194","DOIUrl":"https://doi.org/10.1051/JP3:1997194","url":null,"abstract":"We prove that for localized states at extended defects the high-temperature sides of deep-level transient spectra can be written as a product of an amplitude function depending on the pulse length and a shape function depending on temperature. By this property localized states can be distinguished experimentally from bandlike states. Simulations of deep level transient spectra for localized and bandlike states using the same density of states function and parameter values illustrate the differences and show the failures of conventional analysis in both cases.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124168823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
High Resolution Electron Microscopic Studies of the Atomistic Glide Processes in Semiconductors 半导体中原子滑动过程的高分辨率电镜研究
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997199
K. Maeda, M. Inoue, K. Suzuki, H. Amasuga, M. Nakamura, E. Kanematsu
{"title":"High Resolution Electron Microscopic Studies of the Atomistic Glide Processes in Semiconductors","authors":"K. Maeda, M. Inoue, K. Suzuki, H. Amasuga, M. Nakamura, E. Kanematsu","doi":"10.1051/JP3:1997199","DOIUrl":"https://doi.org/10.1051/JP3:1997199","url":null,"abstract":"Direct observations of kinks and their motion on 30°-partial dislocations in Ge and GaAs have been for the first time attempted by using high resolution electron microscopy with the electron beam incident normal to the stacking fault plane separating the two partials. Lattice fringe shift across the 30°-partials was used to locate the partial dislocation lines in an atomic resolution sufficient to identify kinks on them. Possible causes of kink migration and kink-pair formation observed in the images were discussed in light of available experimental and theoretical information.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"243 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123011496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Simulations et optimisation des transferts thermochimiques dans un réacteur solide-gaz 固体-气体反应器热化学转移的模拟与优化
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997211
A. Forestier, P. Forges, M. Amouroux
{"title":"Simulations et optimisation des transferts thermochimiques dans un réacteur solide-gaz","authors":"A. Forestier, P. Forges, M. Amouroux","doi":"10.1051/JP3:1997211","DOIUrl":"https://doi.org/10.1051/JP3:1997211","url":null,"abstract":"Cet article presente des resultats d'optimisation d'echangeurs dans un reacteur thermochimique. Ce dernier contient un solide poreux capable de reagir exothermiquement avec un gaz reactif venant d'un evaporateur. Inversement, s'il recoit un apport de chaleur, la reaction precedente se produit dans le sens endothermique et le gaz desorbe est renvoye vers un condenseur. Les transferts energetiques entre les echangeurs de chaleur et le solide poreux sont assures par des caloducs gravitationnels. Le principal objectif de cet article consiste a optimiser ces transferts en jouant sur le dimensionnement et la localisation de ces echangeurs. Ce probleme d'optimisation necessite bien entendu, dans un premier temps, la connaissance spatiale et temporelle de la temperature et de l'avancement de la reaction chimique en phase d'absorption ou de desorption du gaz reactif. Un systeme d'equations aux derivees partielles non lineaire modelise les phenomenes physico-chimiques dans le reacteur. Deux etudes de resolution numerique ont ete menees au laboratoire, la premiere utilisant la technique des differences finies et la seconde, celle des elements finis. Une confrontation de ces deux methodes a permis de determiner l'outil numerique le mieux adapte au probleme d'optimisation pose.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127102671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Aharonov-Bohm Interference of Holes at Dislocations in Lattice-Mismatched Heterostructures 晶格错配异质结构位错处空穴的Aharonov-Bohm干涉
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997204
T. Figielski, T. Wosinski, A. Makosa
{"title":"Aharonov-Bohm Interference of Holes at Dislocations in Lattice-Mismatched Heterostructures","authors":"T. Figielski, T. Wosinski, A. Makosa","doi":"10.1051/JP3:1997204","DOIUrl":"https://doi.org/10.1051/JP3:1997204","url":null,"abstract":"We have succeeded in revealing Aharonov-Bohm type interference of holes in macroscopic semiconductor sample containing an array of straight-line dislocations. This interference has been observed at helium temperatures as oscillations in the forward current flowing through p + -n junction of the lattice-mismatched GaAs 1-x Sb x /GaAs heterostructure while measured as a function of the magnetic field perpendicular to the current. The oscillation cycles arise when a primary hole wave meeting the Read's cylinder of a misfit dislocation interferes with a wave which circled completely round the cylinder.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127929647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Energy Levels Associated with Extended Defects in Plastically Deformed n-Type Silicon 塑性变形n型硅中扩展缺陷的能级
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997195
D. Cavalcoli, A. Cavallini, E. Gombia
{"title":"Energy Levels Associated with Extended Defects in Plastically Deformed n-Type Silicon","authors":"D. Cavalcoli, A. Cavallini, E. Gombia","doi":"10.1051/JP3:1997195","DOIUrl":"https://doi.org/10.1051/JP3:1997195","url":null,"abstract":"Deep Level Transient Spectroscopy (DLTS) investigations of plastically deformed, n-type silicon have been performed. DLTS spectra revealed four lines usually found in deformed silicon but they were unusually dominated by a broadened level located at 0.40 eV from the conduction band edge. This trap resulted to be the most localized at the dislocations, while the other traps are probably related to point defects. The measured DLTS line widths have been simulated by the introduction of a broadening parameter δ, whose dependence on the dislocation density has been studied. Some hypotheses on the physical mechanisms responsible for the line broadening have been advanced. A tentative identification of the defects responsible for the deep levels observed has been performed.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115655238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Localization of Y Luminescence at Glide Dislocations in Cadmium Telluride 碲化镉滑动位错Y发光的定位
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997203
S. Hildebrandt, H. Uniewski, J. Schreiber, H. Leipner
{"title":"Localization of Y Luminescence at Glide Dislocations in Cadmium Telluride","authors":"S. Hildebrandt, H. Uniewski, J. Schreiber, H. Leipner","doi":"10.1051/JP3:1997203","DOIUrl":"https://doi.org/10.1051/JP3:1997203","url":null,"abstract":"We demonstrate unambiguously that the well-known defect-related Y luminescence band at 1.476 eV in CdTe originates from the polar Te(g) glide dislocation segments. Crystallographically defined glide dislocation arrangements produced by local plastic deformation on (111)Te surfaces using Vickers microindentation were characterized by temperature-dependent cathodoluminescence (CL) microscopy as well as CL and PL spectroscopy. The identification of the Te(g) dislocation was obtained by determining the surface polarity applying X-ray diffraction and subsequently revealing the volume glide geometry observed by CL imaging after stepwise depth-etching of the (111) sample surface. From the spectral and recombination-kinetic properties of the dislocation-bound Y luminescence the model of radiative decay of dislocation-related excitons is supported. Particularly, we may conclude that they are bound to energy levels in the fundamental gap localized at the 90° Te(g) partial dislocations.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116181782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 43
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