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Journal De Physique Iii最新文献

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Simulateur analogique temps réel des systèmes électrotechniques 电气工程系统的实时模拟模拟器
Journal De Physique Iii Pub Date : 1997-08-01 DOI: 10.1051/JP3:1997218
Ahmed Braham, Henri Schneider, M. Metz
{"title":"Simulateur analogique temps réel des systèmes électrotechniques","authors":"Ahmed Braham, Henri Schneider, M. Metz","doi":"10.1051/JP3:1997218","DOIUrl":"https://doi.org/10.1051/JP3:1997218","url":null,"abstract":"Cet article presente un nouveau simulateur analogique permettant d'effectuer la simulation temps reel de tous types de convertisseurs statiques fonctionnant a des frequences de decoupages de quelques dizaines de kilo Hertz. Ce simulateur analogique temps reel est realise a l'aide de convoyeurs de courant. Ces derniers, caracterises par des performances statiques et dynamiques interessantes, realisent la source de courant controlee, fonction essentielle du simulateur analogique, et lui apportent rapidite et precision. Les elements classiques de l'ensemble convertisseur-machine (impedances, interrupteurs,... ) sont simules independamment sous forme de dipoles flottants. La simulation d'un systeme complexe est realisee par simple association de ces dipoles flottants.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117250205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improvement of the Spatial Amplitude Isotropy of a ^4He Magnetometer Using a Modulated Pumping Beam 用调制抽运光束改善a ^4He磁强计的空间振幅各向同性
Journal De Physique Iii Pub Date : 1997-08-01 DOI: 10.1051/JP3:1997215
B. Chéron, H. Gilles, J. Hamel, O. Moreau, E. Noël
{"title":"Improvement of the Spatial Amplitude Isotropy of a ^4He Magnetometer Using a Modulated Pumping Beam","authors":"B. Chéron, H. Gilles, J. Hamel, O. Moreau, E. Noël","doi":"10.1051/JP3:1997215","DOIUrl":"https://doi.org/10.1051/JP3:1997215","url":null,"abstract":"Les magnetometres a pompage optique sont des magnetometres scalaires. Contrairement aux magnetometres vectoriels, ils mesurent le module du champ magnetique quelle que soit l'orientation du capteur dans l'espace. Cependant, pour certaines orientations du magnetometre par rapport a la direction du champ a mesurer, l'amplitude du signal de resonance s'annule et la mesure devient impossible. Dans cet article, nous presentons une solution simple pour reduire l'anisotropie spatiale d'amplitude et nous l'appliquons a un magnetometre a helium-4 developpe dans notre Laboratoire.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121998814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
New issues on Stimulated Brillouin Scattering in a laser-produced plasma 激光等离子体中受激布里渊散射的新问题
Journal De Physique Iii Pub Date : 1997-08-01 DOI: 10.1051/JP3:1997220
C. Labaune, H. Baldis, E. Schifano, V. Tikhonchuk
{"title":"New issues on Stimulated Brillouin Scattering in a laser-produced plasma","authors":"C. Labaune, H. Baldis, E. Schifano, V. Tikhonchuk","doi":"10.1051/JP3:1997220","DOIUrl":"https://doi.org/10.1051/JP3:1997220","url":null,"abstract":"Good agreement between Stimulated Brillouin Scattering (SBS) measurements and the convective theory of SBS in randomly distributed speckles has been achieved thanks to recent progress in both the experimental and the theoretical parts. Modification of SBS in presence of a secondary interaction beam demonstrates the sensitivity of SBS to initial ion density fluctuations in the plasma.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114377510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Metal-n-InP Rectifying Properties Enhancement with Zn Based Metallizations and Diffusion at Moderate Annealing Temperatures 中等退火温度下锌基金属化和扩散增强金属-n- inp整流性能
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997205
F. Barbarin, C. Guillot, J. Achard, M. Dugay, B. Lauron, D. Kim
{"title":"Metal-n-InP Rectifying Properties Enhancement with Zn Based Metallizations and Diffusion at Moderate Annealing Temperatures","authors":"F. Barbarin, C. Guillot, J. Achard, M. Dugay, B. Lauron, D. Kim","doi":"10.1051/JP3:1997205","DOIUrl":"https://doi.org/10.1051/JP3:1997205","url":null,"abstract":"Rectifying contacts on n-InP using Zn based metallizations followed by moderate annealing temperature and time were studied. Diffusion of Zn atoms at the metal-semiconductor interface creates a thin p-InP layer. Pseudo-Schottky junctions were obtained with a significant barrier height enhancement, typically 0.2-0.25 eV. The metallization process involved throughout the present work leads to high quality Schottky diodes within a rather simple procedure similar to this generally used to obtain good ohmic contacts. It is shown in particular that the special requirements needed for a lot of electrical measurements (e.g. C-V characteristics or D.L.T.S.) can be matched without any extra complication. The behaviour of Schottky devices was throroughly analysed as a function of the annealing procedure. Best performances were obtained by applying cumulative annealing sequences, increasing the temperature while decreasing the time of exposure. The homogeneity of the structures was attested from a satisfactory agreement between barrier heights deduced either from current or from capacitance measurements. A good linearity of C -2 -V-T curves and low values of the series resistances were also obtained.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121374637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon 硅中氧沉淀诱导扩展缺陷的电学和结构特性
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997200
C. Claeys, E. Simoen, J. Vanhellemont
{"title":"Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon","authors":"C. Claeys, E. Simoen, J. Vanhellemont","doi":"10.1051/JP3:1997200","DOIUrl":"https://doi.org/10.1051/JP3:1997200","url":null,"abstract":"Although the oxygen precipitation process has been extensively studied during the last two decades, there still exists controversy concerning the electrical activity of the precipitates and the associated extended defect complexes. Therefore in the present study a unique combination of complementary characterization techniques is used to gain a better insight into the structural and electrical properties of oxygen-precipitation induced extended defects. TEM and LST are used for the structural analyses, while DLTS, PL, lifetime measurements, EBIC analyses and low frequency noise spectroscopy are used for the electrical characterization. The experimental observations are compared with relevant data available in the literature. Strong evidence is given that in clean processed wafers, the dominant recombination activity is associated with the dislocations, rather than with the precipitates themselves.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131813057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Évaluation pratique des performances d'une machine Stirling de taille reduite fonctionnant en cycle frigorifique 在制冷循环中运行的小型斯特林机的实际性能评价
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997209
Philippe Nika, F. Lanzetta
{"title":"Évaluation pratique des performances d'une machine Stirling de taille reduite fonctionnant en cycle frigorifique","authors":"Philippe Nika, F. Lanzetta","doi":"10.1051/JP3:1997209","DOIUrl":"https://doi.org/10.1051/JP3:1997209","url":null,"abstract":"Les auteurs presentent une etude concernant l'evaluation des performances d'une machine thermodynamique de Stirling de taille reduite fonctionnant en cycle frigorifique. La methode retenue est basee sur un bilan d'energie pour un systeme ouvert constitue d'un cylindre sans clapets et de son piston. Cette methode est appliquee dans les volumes de detente et de compression ainsi que dans le regenerateur pour chacune des quatre phases du cycle frigorifique. Les parametres intervenant dans l'etude theorique sont d'ordres geometrique, mecanique, thermodynamique et thermique. La resolution des equations issues du bilan energetique pour chacune des quatre phases du cycle permet de tracer les evolutions des temperatures dans les volumes de compression et de detente, des variations de pression et des masses du gaz de travail et de la production frigorifique. Celles-ci sont ensuite comparees aux resultats experimentaux.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133540246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Non-Destructive Techniques for Identification and Control of Processing Induced Extended Defects in Silicon and Correlation with Device Yield 硅中加工引起的扩展缺陷的无损识别和控制及其与器件良率的关系
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997197
J. Vanhellemont, S. Milita, M. Servidori, V. Higgs, G. Kissinger, E. Gramenova, E. Simoen, P. Jansen
{"title":"Non-Destructive Techniques for Identification and Control of Processing Induced Extended Defects in Silicon and Correlation with Device Yield","authors":"J. Vanhellemont, S. Milita, M. Servidori, V. Higgs, G. Kissinger, E. Gramenova, E. Simoen, P. Jansen","doi":"10.1051/JP3:1997197","DOIUrl":"https://doi.org/10.1051/JP3:1997197","url":null,"abstract":"The possibilities and limitations of non-destructive extended defect characterization techniques, i.e. X-ray topography, carrier recombination imaging and laser scattering tomography are illustrated by a case study whereby a dislocation problem occurred during the local isolation step of a CMOS compatible diode process. It is shown that the diode yield is correlated with the presence of dislocations observed after the full process. The in process application of the techniques is illustrated by investigating defect formation after different local isolation processes.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131867937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Conductivity and Photoconductivity at Dislocations 位错处的电导率和光电导率
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997196
R. Labusch
{"title":"Conductivity and Photoconductivity at Dislocations","authors":"R. Labusch","doi":"10.1051/JP3:1997196","DOIUrl":"https://doi.org/10.1051/JP3:1997196","url":null,"abstract":"The general features of one-dimensional states at dislocations, including those that are bound in the electrostatic field of trapped charges, are discussed. An overview of the available evidence for the existence or nonexistence of one-dimensional conduction in these states is given. Photoconductivity measurements along dislocations and from the dislocation core to the bulk are presented and discussed in some detail. The analysis of the results leads to a revision of some old concepts in dislocation modelling.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115072932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Passivation of Extended Defects in Silicon by Catalytically Dissociated Molecular Hydrogen 催化解离氢对硅中扩展缺陷的钝化作用
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997201
S. Binetti, S. Basu, M. Acciarri, S. Pizzini
{"title":"Passivation of Extended Defects in Silicon by Catalytically Dissociated Molecular Hydrogen","authors":"S. Binetti, S. Basu, M. Acciarri, S. Pizzini","doi":"10.1051/JP3:1997201","DOIUrl":"https://doi.org/10.1051/JP3:1997201","url":null,"abstract":"This paper reports the results of a new hydrogenation process, which applies the properties of noble metals as chemisorptive dissociation catalysts for molecular hydrogen. Used to passivate deep states in several kinds of polycrystalline materials, H has been shown to be particularly effective for samples grown by the EFG (Edge Film Grown) technique. These results are compared with former ones obtained on dislocated single crystals, which were passivated under an hydrogen plasma, to speculate about the role of dislocations on the yield of a hydrogen passivation process.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134267791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Homogénéisation des matériaux constituant les condensateurs bobinés à films métallisés 金属化薄膜电容器材料的均质化
Journal De Physique Iii Pub Date : 1997-07-01 DOI: 10.1051/JP3:1997207
C. Joubert, G. Rojat, A. Béroual
{"title":"Homogénéisation des matériaux constituant les condensateurs bobinés à films métallisés","authors":"C. Joubert, G. Rojat, A. Béroual","doi":"10.1051/JP3:1997207","DOIUrl":"https://doi.org/10.1051/JP3:1997207","url":null,"abstract":"La structure des condensateurs metallises est complexe et les tailles des elements constitutifs sont dissemblables. En consequence, le calcul direct de champs et de densites de courant est impossible. Dans cet article, nous donnons quelques proprietes macroscopiques (impedances, admittances) du bobinage, obtenues grâce a une methode d'homogeneisation. Ces proprietes permettent de calculer la repartition des courants et des echauffements dans les condensateurs.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"5 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128783863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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