发布求助
文献互助 智能选刊 最新文献

Journal De Physique Iii最新文献

筛选
英文 中文
Influence de l'introduction de défauts colonnaires amorphes sur les propriétés de transport d'un monocristal supraconducteur à haute Tc 非晶态柱状缺陷的引入对高Tc超导单晶输运性能的影响
Journal De Physique Iii Pub Date : 1997-12-01 DOI: 10.1051/JP3:1997266
F. Warmont, S. Hébert, V. Hardy, Christine Martin, Ch. Simon, J. Provost
{"title":"Influence de l'introduction de défauts colonnaires amorphes sur les propriétés de transport d'un monocristal supraconducteur à haute Tc","authors":"F. Warmont, S. Hébert, V. Hardy, Christine Martin, Ch. Simon, J. Provost","doi":"10.1051/JP3:1997266","DOIUrl":"https://doi.org/10.1051/JP3:1997266","url":null,"abstract":"L'irradiation aux ions lourds de haute energie permet d'introduire des defauts colonnaires amorphes dans les supraconducteurs a haute T c . Ces centres de pinning artificiel, de morphologie connue, sont introduits en concentration facile a maitriser. L'efficacite de ces defauts a ete tres souvent demontree a partir de mesures d'aimantation. L'etude presentee ici : mesure de la resistance selon l'axe c, R c (T), en presence de defauts colonnaires paralleles a l'axe c, montre que ces defauts sont capables de s'opposer efficacement a l'effet des fluctuations thermiques. Les mesures ont ete faites sur le meme monocristal avant et apres l'irradiation.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130263757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Characterization of the Director Field in a Distorted Nematic Layer 畸变向列层中导向场的光学特性
Journal De Physique Iii Pub Date : 1997-12-01 DOI: 10.1051/JP3:1997105
E. Plaut, A. Joets, R. Ribotta
{"title":"Optical Characterization of the Director Field in a Distorted Nematic Layer","authors":"E. Plaut, A. Joets, R. Ribotta","doi":"10.1051/JP3:1997105","DOIUrl":"https://doi.org/10.1051/JP3:1997105","url":null,"abstract":"We develop new optical methods using transmitted polarized light for the characterization of the out of plane component n z of the director field in a weakly distorted planar nematic layer. In extraordinary light, we relate the angles of aperture of the caustic surface to the local amplitudes of the n z distortion. In ordinary light, a new type of contrast due to the anisotropic light scattering is shown to give the map of n z 2 . We apply our methods to the study of the director distortions occuring in the thermal convection.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133688148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Dislocation and grain boundary energies in Si and Ge from an anharmonic bond charge model 基于非调和键电荷模型的Si和Ge的位错和晶界能
Journal De Physique Iii Pub Date : 1997-12-01 DOI: 10.1051/JP3:1997259
H. Teichler, J. Wilder
{"title":"Dislocation and grain boundary energies in Si and Ge from an anharmonic bond charge model","authors":"H. Teichler, J. Wilder","doi":"10.1051/JP3:1997259","DOIUrl":"https://doi.org/10.1051/JP3:1997259","url":null,"abstract":"The paper presents calculated line energy values for the reconstructed 60° and 90° glide-set partial dislocations in Si and Ge, formation and migration energy for the reconstructed kink on the reconstructed 90° partials, and energy data for the symmetric Σ = 9 and for two variants of the symmetric Σ = 11 tilt grain boundaries. Criteria are formulated to identify interatomic force field models which are able to provide reliable energy estimates. The anharmonic bond charge (a.bc) model is introduced as an example that approximately fulfills the basic criteria, i.e., describes well the second and third order elastic constants and the phonon dispersion curves. Deviations between energy estimates from the a.bc model and less reliable approaches are discussed. It is shown that in case of the = 11 tilt grain boundary the a.bc model gives different energetical ranking for the so-called Σ = 11A and the Σ = 11B variants in Si and Ge, in agreement with the experimental observations.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":" 39","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120830761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon n型硅位错深层热行为
Journal De Physique Iii Pub Date : 1997-12-01 DOI: 10.1051/JP3:1997103
D. Cavalcoli, A. Cavallini, E. Gombia
{"title":"Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon","authors":"D. Cavalcoli, A. Cavallini, E. Gombia","doi":"10.1051/JP3:1997103","DOIUrl":"https://doi.org/10.1051/JP3:1997103","url":null,"abstract":"The thermal behaviour of deformation-induced traps in plastically deformed n-type silicon has been investigated via Deep Level Transient Spectroscopy. Among the four traps usually detected in plastically deformed silicon only two have been found to survive upon annealing: trap A and trap C located at 0.18-0.23 eV and 0.38-0.43 eV from the conduction band edge, respectively. The last one has been related to dislocations.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127675989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Méthodes de type éléments finis pour le calcul des champs électriques et magnétiques en électroencéphalographie et magnétoencéphalographie 脑电图和磁脑电图中电场和磁场计算的有限元方法
Journal De Physique Iii Pub Date : 1997-12-01 DOI: 10.1051/JP3:1997268
C. Guérin, Gildas Marin, L. Garnero, G. Meunier
{"title":"Méthodes de type éléments finis pour le calcul des champs électriques et magnétiques en électroencéphalographie et magnétoencéphalographie","authors":"C. Guérin, Gildas Marin, L. Garnero, G. Meunier","doi":"10.1051/JP3:1997268","DOIUrl":"https://doi.org/10.1051/JP3:1997268","url":null,"abstract":"Afin de calculer le potentiel electrique et l'induction crees par l'activite electrique du cerveau, nous avons developpe des methodes utilisant la Methode des Elements Finis. Ces methodes, qui peuvent s'appliquer a des modeles realistes de tete et qui permettent de tenir compte de la conductivite anisotrope de certains tissus comme l'os, sont presentees. Puis deux exemples numeriques sont decrits: un modele de spheres concentriques et un modele realiste de tete.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"4 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117290090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Dislocation-point defect interaction effect on local electrical properties of semiconductors 位错点缺陷相互作用对半导体局部电学性能的影响
Journal De Physique Iii Pub Date : 1997-12-01 DOI: 10.1051/JP3:1997102
E. Yakimov
{"title":"Dislocation-point defect interaction effect on local electrical properties of semiconductors","authors":"E. Yakimov","doi":"10.1051/JP3:1997102","DOIUrl":"https://doi.org/10.1051/JP3:1997102","url":null,"abstract":"The results of investigations of dislocation effect on the Si electrical and optical properties have been reviewed. The important role of dislocation-point defect interaction in the formation of dislocation properties has been demonstrated. A short review of recent investigations of clean dislocation properties has been presented. The results of investigations of dislocation related defect spatial distribution including dislocation slip planes have been discussed. The mechanisms of dislocation electrical activity formation have been analyzed.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129528357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Filtrage actif des harmoniques en courant et en tension des reseaux électriques : modélisation, simulation numérique et expérimentation 电网电流电压谐波的有源滤波:建模、数值仿真和实验
Journal De Physique Iii Pub Date : 1997-12-01 DOI: 10.1051/JP3:1997269
C. Lott, O. Lapierre, H. Pouliquen, Shahrokh Saadate
{"title":"Filtrage actif des harmoniques en courant et en tension des reseaux électriques : modélisation, simulation numérique et expérimentation","authors":"C. Lott, O. Lapierre, H. Pouliquen, Shahrokh Saadate","doi":"10.1051/JP3:1997269","DOIUrl":"https://doi.org/10.1051/JP3:1997269","url":null,"abstract":"Les convertisseurs statiques absorbent des courants non sinusoidaux et consomment generalement de la puissance reactive. Ces deux phenomenes nouveaux sur le reseau ont engendre un certain nombre de perturbations allant du dysfonctionnement d'un equipement jusqu'a la destruction d'une partie des equipements connectes. Dans cet article, les problemes lies aux perturbations generees par les convertisseurs statiques ont ete etudies et des solutions visant a les eliminer ont ete presentees. Elles portent sur les methodes de filtrage passif et actif. Quelques elements de definition et de dimensionnement de filtres passifs sont donnes. Le filtrage actif est ensuite traite. Les deux structures, courant et tension, sont etudiees et la structure tension a ete retenue pour la suite de l'article. Differents principes de controle du filtre actif a structure tension ont ete presentes. La methode d'identification des harmoniques par le principe du calcul des puissances active et reactive instantanees donne des resultats satisfaisants. Des simulations numeriques ont ete realisees. Enfin une maquette experimentale de 100 kVA a ete realisee et testee sur un site industriel. Les essais de la maquette ont montre de bonnes performances du filtre actif a thyristor GTO. Le filtrage en tension d'un jeu de barres perturbe par un convertisseur de 5 MVA connecte sur un reseau amont a egalement ete realise et etudie dans cet article.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127510866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Strain Measurements in Thin Film Structures by Convergent Beam Electron Diffraction 用会聚束电子衍射测量薄膜结构中的应变
Journal De Physique Iii Pub Date : 1997-12-01 DOI: 10.1051/JP3:1997265
A. Armigliato, R. Balboni, A. Benedetti, S. Frabboni, A. Tixier, J. Vanhellemont
{"title":"Strain Measurements in Thin Film Structures by Convergent Beam Electron Diffraction","authors":"A. Armigliato, R. Balboni, A. Benedetti, S. Frabboni, A. Tixier, J. Vanhellemont","doi":"10.1051/JP3:1997265","DOIUrl":"https://doi.org/10.1051/JP3:1997265","url":null,"abstract":"The Convergent Beam Electron Diffraction technique (CBED) has been applied to determine the lattice strain in Si 1-x Ge x /Si heterostructures and below patterned films on silicon substrates. The well known problem of the stress relaxation which occurs in thinned TEM samples has been overcome, in the case of the heterostructures, by applying the isotropic elasticity theory to the lattice constants measured along different crystallographic directions through the shift of the High Order Laue Zone (HOLZ) lines in the central disk of the CBED patterns. In this way bulk strain values have been obtained, in good agreement with values deduced from independent techniques. In patterned structures, the high spatial resolution of the CBED technique has been applied to determine the distribution of the components of the strain tensor induced into oxidized silicon substrates by Si 3 N 4 stripes. A good agreement with the results obtained using numerical computations has been found.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133721277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Microstructure of Pyramidal Defects in InSb Layers Grown by Atomic Layer Molecular Beam Epitaxy on InP Substrates InP衬底原子层分子束外延生长InSb层锥体缺陷的微观结构
Journal De Physique Iii Pub Date : 1997-12-01 DOI: 10.1051/JP3:1997261
J. C. Ferrer, F. Peiró, A. Cornet, J. Morante, T. Utzmeier, F. Briones
{"title":"Microstructure of Pyramidal Defects in InSb Layers Grown by Atomic Layer Molecular Beam Epitaxy on InP Substrates","authors":"J. C. Ferrer, F. Peiró, A. Cornet, J. Morante, T. Utzmeier, F. Briones","doi":"10.1051/JP3:1997261","DOIUrl":"https://doi.org/10.1051/JP3:1997261","url":null,"abstract":"We report on the structural characterization of epitaxial Insb films grown on InP substrates by atomic layer molecular beam epitaxy at relatively low temperatures (330 °C < T < 400 °C). Moreover, we study the effect of the introduction of an interme- diate Insb/InP buffer layer grown by molecular beam epitaxy. The studies were carried out by TEM and HRTEM, to investigate the densities and nature of the defects and the accommoda- tion mechanism between the two types of layers which have a large lattice mismatch (10.4%). Results show a high defect density at the interface vicinity whatever the growth method em- ployed, with or without buffer layers, but better quality layers are obtained as growth proceeds. The prevailing type of defects are threading dislocations and stacking faults for both types of samples, but the introduction of the intermediate layers leads to the formation of two types of complex three-dimensional defects, consisting m crystal misorientations, that induce an anoma- lous growth of the Insb layer leading to different growth rates and the formation of pyramidal or truncated pyramidal hillocks on the surface. In this case scanning electron microscopy and Raman analysis were also performed to study the influence of the defects on surface morphology and confirm their structure. Moreover, anisotropy of the stacking fault distribution is noticed in this sample: the density for (l10)-(ill)A slip planes is higher than for the (l10)-(ill)B slip planes. Strain due to large lattice mismatch is relieved m both types of samples by the","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"47 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113986236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Heteroepitaxy of Cubic GaN 异性恋或立方性甘
Journal De Physique Iii Pub Date : 1997-12-01 DOI: 10.1051/JP3:1997260
A. Trampert, O. Brandt, H. Yang, K. Ploog
{"title":"Heteroepitaxy of Cubic GaN","authors":"A. Trampert, O. Brandt, H. Yang, K. Ploog","doi":"10.1051/JP3:1997260","DOIUrl":"https://doi.org/10.1051/JP3:1997260","url":null,"abstract":"We report on the epitaxial growth and the microstructure of cubic GaN. The layers investigated are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) and (311)A substrates. Transmission electron microscopy reveals that, despite of the extreme lattice mismatch between these two materials, GaN grows in the metastable cubic phase with a well-defined orientation-relationship to the substrate and a sharp heteroboundary. This preference of the metastable phase and its epitaxial orientation originate in the initial stage of growth which is discussed in connection with a coincidence lattice for the investigated interface structures.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121910122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信