n型硅位错深层热行为

Journal De Physique Iii Pub Date : 1997-12-01 DOI:10.1051/JP3:1997103

D. Cavalcoli, A. Cavallini, E. Gombia

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引用次数: 1

摘要

利用深能级瞬态光谱研究了塑性变形n型硅中变形诱导型阱的热行为。在塑性变形硅中通常检测到的四个陷阱中，只有两个在退火后存活:陷阱A和陷阱C分别位于离导带边缘0.18-0.23 eV和0.38-0.43 eV处。最后一个与位错有关。

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Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon

The thermal behaviour of deformation-induced traps in plastically deformed n-type silicon has been investigated via Deep Level Transient Spectroscopy. Among the four traps usually detected in plastically deformed silicon only two have been found to survive upon annealing: trap A and trap C located at 0.18-0.23 eV and 0.38-0.43 eV from the conduction band edge, respectively. The last one has been related to dislocations.

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Journal De Physique Iii

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