{"title":"位错处的电导率和光电导率","authors":"R. Labusch","doi":"10.1051/JP3:1997196","DOIUrl":null,"url":null,"abstract":"The general features of one-dimensional states at dislocations, including those that are bound in the electrostatic field of trapped charges, are discussed. An overview of the available evidence for the existence or nonexistence of one-dimensional conduction in these states is given. Photoconductivity measurements along dislocations and from the dislocation core to the bulk are presented and discussed in some detail. The analysis of the results leads to a revision of some old concepts in dislocation modelling.","PeriodicalId":237595,"journal":{"name":"Journal De Physique Iii","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Conductivity and Photoconductivity at Dislocations\",\"authors\":\"R. Labusch\",\"doi\":\"10.1051/JP3:1997196\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The general features of one-dimensional states at dislocations, including those that are bound in the electrostatic field of trapped charges, are discussed. An overview of the available evidence for the existence or nonexistence of one-dimensional conduction in these states is given. Photoconductivity measurements along dislocations and from the dislocation core to the bulk are presented and discussed in some detail. The analysis of the results leads to a revision of some old concepts in dislocation modelling.\",\"PeriodicalId\":237595,\"journal\":{\"name\":\"Journal De Physique Iii\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal De Physique Iii\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/JP3:1997196\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal De Physique Iii","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JP3:1997196","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Conductivity and Photoconductivity at Dislocations
The general features of one-dimensional states at dislocations, including those that are bound in the electrostatic field of trapped charges, are discussed. An overview of the available evidence for the existence or nonexistence of one-dimensional conduction in these states is given. Photoconductivity measurements along dislocations and from the dislocation core to the bulk are presented and discussed in some detail. The analysis of the results leads to a revision of some old concepts in dislocation modelling.
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