High Resolution Electron Microscopic Studies of the Atomistic Glide Processes in Semiconductors

Abstract

Direct observations of kinks and their motion on 30°-partial dislocations in Ge and GaAs have been for the first time attempted by using high resolution electron microscopy with the electron beam incident normal to the stacking fault plane separating the two partials. Lattice fringe shift across the 30°-partials was used to locate the partial dislocation lines in an atomic resolution sufficient to identify kinks on them. Possible causes of kink migration and kink-pair formation observed in the images were discussed in light of available experimental and theoretical information.