金刚石中90°部分位错核的从头算研究

P. Sitch, R. Jones, S. Öberg, M. Heggie
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引用次数: 8

摘要

采用从头算局部密度泛函簇方法研究了金刚石中90°滑动部分位错的电子和结构特性。重建的核心C-C键的键长比块状金刚石长5%。计算得出位错上扭结的形成能和迁移能分别为0.32和2.97 eV。此外,扭结运动中间隙水平的变化表明,p型掺杂将导致部分迁移率的增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An ab initio study of the 90° partial dislocation core in diamond
The electronic and structural properties of the 90° glide partial dislocation in diamond are investigated using an ab initio local density functional cluster method. The core C–C bond is found to be reconstructed with a bond length 5% longer than that in bulk diamond. The formation and migration energy of the kink on the dislocation are calculated to be 0.32 and 2.97 eV respectively. Further, the shift of the gap levels during kink motion suggests that p-type doping will lead to an increase in the mobility of the partial.
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