Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors

We prove that for localized states at extended defects the high-temperature sides of deep-level transient spectra can be written as a product of an amplitude function depending on the pulse length and a shape function depending on temperature. By this property localized states can be distinguished experimentally from bandlike states. Simulations of deep level transient spectra for localized and bandlike states using the same density of states function and parameter values illustrate the differences and show the failures of conventional analysis in both cases.