2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference最新文献_第5页

Innovative of mechanical top clamp fixture calibration through load cell methodology 创新的机械顶夹夹具校准通过称重传感器的方法

2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference Pub Date : 2016-09-01 DOI: 10.1109/IEMT.2016.7761942

Tan Jui Ang, N. Kong

引用次数: 2

Influence of injection current and ambient temperature on intensity and wavelength of low-power SMD LED 注入电流和环境温度对小功率SMD LED发光强度和波长的影响

2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference Pub Date : 2016-09-01 DOI: 10.1109/IEMT.2016.7761989

M. E. Raypah, M. Devarajan, F. Sulaiman

引用次数: 12

Comprehensive study to enable successful probing of GaN wafer technology 全面研究，成功探索GaN晶圆技术

2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference Pub Date : 2016-09-01 DOI: 10.1109/IEMT.2016.7761981

Tang Mee Sean

{"title":"Comprehensive study to enable successful probing of GaN wafer technology","authors":"Tang Mee Sean","doi":"10.1109/IEMT.2016.7761981","DOIUrl":"https://doi.org/10.1109/IEMT.2016.7761981","url":null,"abstract":"The power MOSFET wafers which base on silicon substrates are almost reaching end of road, lacking on both performance and cost. It was widely predicted in the industry that next generation wafers should come from Gallium Nitride (GaN) substrate. This new material is expected to be the dominant technology due to its competitive in almost all aspects. Many high power device providers are making deep dive efforts, hopefully to penetrate market earlier than all other competitors. The challenges in achieving that target include facing some of the strangest issues. One of the issues faced in GaN HEMT wafer is not able to perform proper testing as it is a normally-on device. A lot of efforts were invested into developing breakthrough probing process in order to determine quality of device before going into assembly packaging. In the process to develop robust probing methodology, there were many quality occurrences and concerns. Multiple rounds of evaluations were executed and finally obtained few robust options. Upon actual verifications, a new improved probing methodology was selected. It could provide reasonable and reliable measuring performance while concluding new circuits should be redesigned at wafer level. With this new probing method, time to market could reach extremely good performance, enabling competitive advantage in market penetration.","PeriodicalId":237235,"journal":{"name":"2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129905176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fast and accurate USB2.0 high speed buffer transmit tuning flow 快速准确的USB2.0高速缓冲传输调谐流

2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference Pub Date : 2016-09-01 DOI: 10.1109/IEMT.2016.7761990

Bih Qui Tiang, W. Tan

{"title":"Fast and accurate USB2.0 high speed buffer transmit tuning flow","authors":"Bih Qui Tiang, W. Tan","doi":"10.1109/IEMT.2016.7761990","DOIUrl":"https://doi.org/10.1109/IEMT.2016.7761990","url":null,"abstract":"This paper presents an efficient and accurate method flow in USB2.0 high speed buffer tuning. The paper seeks to tackle the issue of lengthy development (pre- & post-silicon design) cycle on determining correct and optimized Analogue Front-End (AFE) buffer register settings for the extensive variation of topologies and wide electrical loss profile channels of USB2.0. A current process flow typically goes through multiple simulation and measurement iterations on the best available settings to pass the eye diagram across the many silicon process, voltage, temperature and impedance corners. The proposed tuning flow can be implemented in an automated algorithm which focuses on examining additional points and electrical parameters in both the 1st & 2nd half of the eye in order to finalize the most optimized settings according to the margins with buffer strength. Of note, this flow maintains a robust accuracy and flexibility where buffer strength are correlated, and algorithms are tested in pre-silicon as well as post-silicon. Ultimately, this translates into an efficient high speed eye diagram tuning capability and enabling a significant saving in time and effort spent on pre-silicon analysis, post-silicon measurement and a shorter design cycle, while maintaining USB2.0 electrical specification compliance in increasingly complex and variant channel solutions.","PeriodicalId":237235,"journal":{"name":"2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128751547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Studies on XPS valence state analysis of copper materials 铜材料的XPS价态分析研究

2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference Pub Date : 2016-09-01 DOI: 10.1109/IEMT.2016.7761945

H. Younan, Shen Yue, Li Kai, W. J. Yuan, C. Y. Shen, Chen Yixin, Fu Chao, Li Xiaomin

引用次数: 5

Qualification and application of pressure-less sinter silver epoxy 无压烧结环氧银的鉴定及应用

2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference Pub Date : 2016-09-01 DOI: 10.1109/IEMT.2016.7761938

Loh Kian Hwa, Nadzirah Yahya, Chin Siew Kheong, Lee Ken Hok

引用次数: 0

An investigation on micro-via drilling on ceramic substrates by a picosecond laser 皮秒激光在陶瓷基板上微孔打孔的研究

2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference Pub Date : 2016-09-01 DOI: 10.1109/IEMT.2016.7761911

H. Hsu, Shih-Jeh Wu

{"title":"An investigation on micro-via drilling on ceramic substrates by a picosecond laser","authors":"H. Hsu, Shih-Jeh Wu","doi":"10.1109/IEMT.2016.7761911","DOIUrl":"https://doi.org/10.1109/IEMT.2016.7761911","url":null,"abstract":"Special ceramics are getting more attention as substrate materials for IC packaging, LED packaging and PC board. Certain ceramic materials have high mechanical strength, low thermal expansion, high electric barrier and high thermal conductivity. These properties are idea for devices pf designated purpose such as high power IC, LED and fast communication IC. For these applications via holes for signal and power connection are necessary. As the devices are miniaturized the sizes of via holes are forced to be reduced even down to tens of micrometers, thus, the drilling task can only be performed by laser. However, the ceramics are brittle and during the laser machining process the thermal stress and shock may easily cause defect in the heat affected zone. Also the debris generated in the thermal fusion-solidation process deteriorate the integrity of the via hole such as the in-out diameter, taper angle and roughness around the via. There is a trade-off between machining efficiency and quality has to be tuned. In this paper we apply a 12 picosecond 1033 nm wavelength laser to study the photo material interaction for drilling micro via in three thin plates of AlN, Al2O3 and Fe2O3 ceramic. AlN and Al2O3 are good heat dissipation material and Fe2O3 is idea for electronic noise immunity. A detail report of the results including machining parameters and inspection of via holes will be presented.","PeriodicalId":237235,"journal":{"name":"2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132907107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Performance and power implications of decoupling allocation with power gated domains 功率门控域解耦分配的性能和功率影响

2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference Pub Date : 2016-09-01 DOI: 10.1109/IEMT.2016.7761984

C. Kuan, Sameer Shekhar, A. Jain

引用次数: 1

Design and characterization of thermal conductive wafer coating in thin small outline package for automotive product application 汽车产品小轮廓薄型封装导热晶圆涂层的设计与表征

2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference Pub Date : 2016-09-01 DOI: 10.1109/IEMT.2016.7761955

A. Hamid, Dhanapalan Periathamby, Suhaimi Azizan, C. E. Tan, S. Nadarajan

{"title":"Design and characterization of thermal conductive wafer coating in thin small outline package for automotive product application","authors":"A. Hamid, Dhanapalan Periathamby, Suhaimi Azizan, C. E. Tan, S. Nadarajan","doi":"10.1109/IEMT.2016.7761955","DOIUrl":"https://doi.org/10.1109/IEMT.2016.7761955","url":null,"abstract":"The thermal conductive die attach (DA) material is very important component and it is function to create a joint between die and leadrame as well as to dissipate heat from die throughout the package. However, the dispensing DA material is giving problems, which is epoxy overflow, die tilted especially when dealing with small die size (ranging 15 to 30 mils). Because of this problem, industries are using noncon-ductive dispensing epoxy without metal content and resulting good for manufacturing. There is another problem when using nonconductive epoxy which reducing in thermal and performance of the device. In this paper, we presents conductive material coated at backside of wafer (conductive WBC) and giving excellent thermal and device performance and good for integrated device assembly manufacturing. In the most stringent automotive application, device performance is critical to component level. The small and thin die assembled in Thin Small Outline Package (TSOP), good thermal conductive die attach material is required, together with excellent robustness in oxidation control, manufacturability and reliability. Upon completion of multiple material screening, wafer back coating (WBC) material had selected. It is thermal conductivity can reach approximately 2.2-W/mK and which is enough for lower power devices as well as good in thermal conductivity. With all the improved assembly processes, conductive wafer coated material achieved good manufacturability, excellent thermal performance, meeting customer specification and ready for high volume manufacturing.","PeriodicalId":237235,"journal":{"name":"2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128047454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Cu based complexes on EFTECH 64 and C194 Cu alloy Cu基配合物对EFTECH 64和C194 Cu合金的影响

2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference Pub Date : 2016-09-01 DOI: 10.1109/IEMT.2016.7761982

C. Ong, K. Lau, M. Zaimi, Kim-Swee Goh, M. Tay

引用次数: 3