Vacuum最新文献

{"title":"Synthesis of 1D/2D MoO3 nanobelts/Ti3C2Tx MXene composites for selective detection of ethanolamine","authors":"Xinru Lin,&nbsp;Zheming Feng,&nbsp;Peng Song","doi":"10.1016/j.vacuum.2026.115144","DOIUrl":"10.1016/j.vacuum.2026.115144","url":null,"abstract":"<div><div>One-dimensional (1D) MoO₃ nanobelts and MoO₃ nanobelts/Ti₃C₂T_x MXene composites were successfully fabricated using hydrothermal and electrostatic self-assembly technology. Characterization indicates that the composites have more unique microstructure and a higher surface adsorbed oxygen content. The gas sensitivity performance results indicate that the optimal operating temperature (180 °C) of MoO₃ nanobelts/Ti₃C₂T_x MXene composites gas sensor is significantly reduced, and the response value to 50 ppm MEA rose from 298.3 % to 470.1 %. The response/recovery times are only 5 s and 9 s respectively, and it has stability and good selectivity for MEA gas. In addition, this study elaborated on its sensing mechanism in depth by constructing a mechanism model. This study proposes a technical solution to enhancing the gas-sensitive performance of MoO₃ through efficient compounding with other functional materials, and also lays a foundation for the research and development and practical application of high-performance MEA gas sensors.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115144"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146080211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Carrier tuning in room temperature laser-ablated TiOx thin films: In vacuo X-ray photoelectron spectroscopy insights","authors":"Angel Regalado-Contreras ,&nbsp;Jonathan Rosas-Alcántara ,&nbsp;Karla Paola Valdez-Núñez ,&nbsp;Mayra Cecilia Ramírez-Camacho ,&nbsp;Wencel de la Cruz","doi":"10.1016/j.vacuum.2026.115142","DOIUrl":"10.1016/j.vacuum.2026.115142","url":null,"abstract":"<div><div>p-type TiO_x thin films have been fabricated using vacuum-based techniques at different deposition pressures, but no reproducible processing window has been established. Herein, TiO_x thin films were deposited by laser ablation of a Ti target under O₂ atmospheres at pressures ranging from 1.2 × 10⁻⁵ to 0.1 Torr. <em>In vacuo</em> X-ray Photoelectron Spectroscopy (XPS) revealed Ti⁴⁺/Ti³⁺ mixed valence below 10⁻² Torr and exclusively Ti⁴⁺ above this threshold. Quantification based on Gaussian peak deconvolution revealed Ti⁴⁺ ranging from 20 to 30.6 at.%, Ti³⁺ from 10.1 to 1.5 at.%, and oxygen approximately constant at ∼69 at.%, with an uncertainty of ±5 %. The electrical properties were carrier concentrations from 2 × 10²⁰ cm⁻³ (electrons) to 2 × 10¹⁶ cm⁻³ (holes), resistivity from 0.4 to 460 Ω cm, and mobility from 0.5 to 6 cm² V⁻¹ s⁻¹. The films with mixed Ti valence were n-type and those with Ti⁴⁺ alone were p-type. Cathodoluminescence, in combination with XPS, revealed shallow acceptor levels mediating p-type conductivity, located at 0.32–0.36 eV above the VBM. Optically, average transmittance as high as 66 % on the visible spectrum (350–750 nm) was achieved. Surface morphology analyzed through atomic force microscopy revealed RMS roughness as low as 0.77 nm. Thin-Film-Transistors (TFT) were fabricated by photolithography. The output/transfer characteristics evolve from non-saturated/weak gate modulation to fully saturated/gate-controlled, consistent with TiO_x channels exhibiting carrier concentrations on the order of 10¹⁹ to 10¹⁷ cm⁻³, respectively. This study advances the body of knowledge on semiconducting TiO_x thin films and their reproducible integration into TFT with tunable performance.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115142"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146080214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Erosion of cathode materials with different melting points in a pulsed vacuum arc","authors":"G. Yu Yushkov,&nbsp;V.D. Gridilev,&nbsp;A.G. Nikolaev,&nbsp;E.M. Oks","doi":"10.1016/j.vacuum.2026.115132","DOIUrl":"10.1016/j.vacuum.2026.115132","url":null,"abstract":"<div><div>We present the results of our experiments of specific erosion of 13 different cathode materials in a microsecond pulsed vacuum arc with current 200 A. The specific erosion of materials with relatively high melting points, greater than <em>Т</em>_melt = 650 °C for magnesium, was found to lie within the range from 30 to 100 μg/C, which is typical of erosion in vacuum arc cathode spots. For materials with low melting points, below <em>Т</em>_melt = 328 °C for lead, anomalously high specific erosion in the range from 500 to 1000 μg/C was observed. We find that this high erosion is due to the contribution of a microdroplet component to the erosion products from vacuum arc cathode spots, when the cathode surface melts to the depth of tens of micrometers during the arc pulse and splashing of the melt due to electro explosive processes in the cathode spots.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115132"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146080215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Composition-dependent structural and optical properties of combinatorially deposited, RF sputtered gallium oxynitride layers","authors":"Marcell Gajdics ,&nbsp;Ildikó Cora ,&nbsp;Tamás Kolonits ,&nbsp;György Sáfrán ,&nbsp;Edit Szilágyi ,&nbsp;Zsolt Zolnai ,&nbsp;Béla Pécz","doi":"10.1016/j.vacuum.2026.115133","DOIUrl":"10.1016/j.vacuum.2026.115133","url":null,"abstract":"<div><div>Gallium oxynitride thin films were deposited by reactive RF sputtering from a liquid Ga target in a working gas mixture of argon, oxygen and nitrogen, with changing oxygen proportion. A combinatorial deposition method was applied that resulted in Ga-O-N samples of varying composition and enabled the characterization of material properties with high throughput over a wide composition range. The optical properties of the films were determined by spectroscopic ellipsometry, while X-ray diffraction and transmission electron microscopy were applied for structural characterization. The composition (measured by energy dispersive spectroscopy and elastic recoil detection analysis), structure and morphology of the films depended on the deposition conditions, especially the actual oxygen flow rate. The dependence of the refractive index and the optical gap on the elemental composition was determined and their values were plotted in ternary Ga-O-N composition diagrams. The same optical properties can occur for different compositions. It was shown that by varying the composition, the optical properties of gallium oxynitride films can be tuned.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115133"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146080114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on debris contamination characteristics and control methods of DPP-type EUV light source","authors":"Guo Yang,&nbsp;Xinjian Zhu,&nbsp;Jiale Zheng,&nbsp;Chenhao Zhou,&nbsp;Guanjun Huang,&nbsp;Xiao Ling,&nbsp;Lin Jiang,&nbsp;Jianhua Zhang","doi":"10.1016/j.vacuum.2026.115156","DOIUrl":"10.1016/j.vacuum.2026.115156","url":null,"abstract":"<div><div>As a key technology for advanced semiconductor manufacturing, extreme ultraviolet lithography (EUVL) requires high exposure power to achieve high productivity and low cost. Nevertheless, debris-induced contamination and degradation of EUV optics remain a major limitation for lithography efficiency and system stability, especially in discharge-produced plasma (DPP) EUV sources. In this work, we realized the effectiveness of in-situ monitoring and control of debris contamination associated with DPP sources. First, we analyze the material characteristics and deposition behavior of debris through in-situ collection and characterization experiments. By varying exposure conditions, we identify key parameters that influence debris deposition. Furthermore, we evaluate the effectiveness and limitations of cleaning debris with operando-compatible argon (Ar) plasma. Finally, we design a debris mitigation (DM) unit that integrates vacuum differential and debris inhibition functions for the DPP system. This work offers practical strategies to mitigate debris in DPP EUV sources, which is crucial for enhancing their power scalability and operational stability in advanced lithography systems.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115156"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146174067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Material-based uniqueness in InSb thin films: Flash Evaporation Epitaxy as a tool for secure device engineering","authors":"Piotr Kałuziak,&nbsp;Jan Raczyński,&nbsp;Semir El-Ahmar,&nbsp;Marta Przychodnia,&nbsp;Marek Nowicki,&nbsp;Ryszard Czajka,&nbsp;Wojciech Koczorowski","doi":"10.1016/j.vacuum.2026.115166","DOIUrl":"10.1016/j.vacuum.2026.115166","url":null,"abstract":"<div><div>In this work, we investigate Flash Evaporation Epitaxy (FEE) as a method for fabricating InSb/GaAs heterostructures exhibiting intrinsic electrical variability while preserving structural and chemical homogeneity. n-InSb/i-GaAs systems were grown using a modified FEE-based high-vacuum setup. The elemental mapping in both the plan view and the cross-section shows a close stoichiometric distribution of the antimony and indium atoms, and a homogeneous incorporation of oxygen with a low content at a level of 1 at.%. SEM and AFM analyses confirm a uniform surface morphology. Electrical characterization of full wafers and progressively structured areas reveals variations in sheet resistance with the range of X-Y exceeding experimental uncertainty. These variations form a statistical distribution of electrical parameters resulting from the properties of the FEE method rather than from significant structural or stoichiometry non-uniformity. This distribution defines the material-based uniqueness of the films. While usually considered a limitation, it is demonstrated here as a functional advantage for generating unique physical signatures applicable to hardware-level authenticity-verification systems.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115166"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146174105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring band gap, structural, and optical properties of CVD-grown few-layer MoS2 via swift heavy-ion irradiation","authors":"Mayur Khan ,&nbsp;Lara Gigli ,&nbsp;Jasper Rikkert Plaisier ,&nbsp;Romana Mikšová ,&nbsp;Anna Macková ,&nbsp;Devesh Kumar Avasthi ,&nbsp;Ambuj Tripathi","doi":"10.1016/j.vacuum.2026.115151","DOIUrl":"10.1016/j.vacuum.2026.115151","url":null,"abstract":"<div><div>Two-dimensional (2D) transition metal dichalcogenides (TMDs) are of great interest for next-generation electronic and optoelectronic devices due to their unique band structures. Here, we report the synthesis of high-quality few-layer MoS₂ films using the sodium chloride (NaCl)-assisted chemical vapor deposition (CVD) method. This approach enables growth at a reduced temperature of 650֯C, significantly lower than the conventional 850֯C. Structural and morphological characterizations performed using optical microscopy, SEM, TEM, synchrotron-based XRD, Raman spectroscopy, UV–Vis spectroscopy, and Rutherford backscattering spectrometry (RBS) confirm crystalline, uniform, and nearly defect-free films. The Raman A_1g-E_2g¹ mode separation of ≈24.5 cm⁻¹ and RBS measurements indicate ≤6 layers of MoS₂. XRD and SAED analyses further confirm the predominantly single-crystalline nature with an interplanar spacing of 0.27 nm. To examine ion-beam induced structural and electronic properties modification in post-synthesis MoS₂, the films were irradiated with 100 MeV Ni ions at fluences between 1 × 10¹¹ and 1 × 10¹³ ions/cm². UV–Vis spectra reveal systematic blue shifts in excitonic absorption peaks, corresponding to a ∼24 meV band gap increase. RBS analysis attributes these changes to sulfur deficiency induced by preferential sputtering, which generate compressive strain. This study demonstrates ion irradiation as an effective route for tailoring the optoelectronic properties of 2D MoS₂.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115151"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146174099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of LPSO phase morphology on the microstructure evolution and mechanical performance of Mg–Gd–Y–Zn–Zr alloys processed by multidirectional forging","authors":"Zhexuan Huang ,&nbsp;Chao Tan ,&nbsp;Shechun Wei ,&nbsp;Han Wang ,&nbsp;Jinjun Wang ,&nbsp;Jingyuan Li","doi":"10.1016/j.vacuum.2026.115146","DOIUrl":"10.1016/j.vacuum.2026.115146","url":null,"abstract":"<div><div>This study investigates an Mg-Gd-Y-Zn-Zr alloy containing long-period stacking ordered (LPSO) phases to clarify how lamellar morphology and multidirectional forging (MDF, 480 °C, 18 passes) influence its microstructure and mechanical response. After homogenization, the furnace-cooled sample (F) retained dense lamellar LPSO structures, while the water-quenched sample (Q) exhibited sparse lamellae and partially block-shaped phases. EBSD results revealed that Q possessed a higher recrystallized fraction (22.9 %) and finer grains (33.3 μm), whereas F showed inhibited recrystallization (13.2 %, 51.4 μm). TEM bright-field images demonstrated dislocation accumulation and strain localization adjacent to dense lamellae, in contrast to the relatively uniform matrix around sparse lamellae. Mechanical testing indicated that both alloys exhibited substantial strengthening after MDF; the F alloy achieved higher strength (TYS = 233 MPa, UTS = 294 MPa), while the Q alloy displayed improved ductility (EL = 4.5 %). These results suggest that densely arranged LPSO lamellae enhance load-bearing capacity but constrain dislocation motion and grain-boundary migration, whereas sparse lamellae facilitate more homogeneous deformation.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115146"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146174098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Morphological changes in Ge surfaces induced by step ion beam irradiation","authors":"Rei Miyata ,&nbsp;Naoto Oishi ,&nbsp;Noriko Nitta","doi":"10.1016/j.vacuum.2026.115145","DOIUrl":"10.1016/j.vacuum.2026.115145","url":null,"abstract":"<div><div>Porous structures develop on Ge surfaces under ion beam irradiation, owing to the self-organization of point defects. Porous structures have been explored for applications in electronic devices as electrode materials in lithium-ion batteries and as functional components in gas sensors. For these applications, precise control of the porous morphology is crucial to maximize the desired functionality and device performance. The size and morphology of such structures are influenced by various factors, including irradiation fluence, ion energy, and irradiation angle. We investigated the formation of porous structures on Ge surfaces under step irradiation conditions by systematically varying the irradiation parameters. Two-step irradiation is a process in which the irradiation conditions are modified between step 1 and step 2. At 0° angle of incidence, the number of step irradiations only had a minimal effect on the structure formation. However, at varying irradiation angles, the resulting structures were influenced by the step irradiation angle. Under angle-step irradiation with an increased fluence, structures with a combination of the effects of both irradiations were formed. These results demonstrate that step irradiation offers a practical route to finely tailor porous Ge morphologies, thereby enabling performance optimization for applications.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115145"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146174076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Superior compressive performance of TPMS-enhanced Voronoi Ti6Al4V alloy fabricated by selective laser melting","authors":"Ning Wang ,&nbsp;Huiru Wang ,&nbsp;Yuxin Liu ,&nbsp;Weijun Liu ,&nbsp;Zhenyu Liu ,&nbsp;Hongyou Bian ,&nbsp;Kai Zhang","doi":"10.1016/j.vacuum.2026.115092","DOIUrl":"10.1016/j.vacuum.2026.115092","url":null,"abstract":"<div><div>An innovative triply periodic minimal surface (TPMS)-enhanced Voronoi structure was successfully designed and fabricated from Ti6Al4V alloy using selective laser melting (SLM) technology. The introduction of the TPMS topology significantly enhanced compressive performance of Voronoi structure. Specifically, the elastic modulus, yield strength, and ultimate strength were enhanced by over 35 % compared to the pure Voronoi structure. The G-Voronoi structure exhibited superior compressive performance and exceptional structural stability compared to the D-Voronoi and IWP-Voronoi structures, with the underlying enhancement mechanisms further elucidated through finite element analysis. Furthermore, analysis based on the Gibson–Ashby model revealed that this significant enhancement in compressive performance primarily stemmed from a fundamental transition in the structural deformation mechanism, shifting from a bending-dominated to a more efficient stretching-dominated mode. This TPMS topological enhancement strategy successfully achieved a simultaneous and substantial improvement in mechanical performance, offering a promising solution for the development of the next generation of high-performance bone implants.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115092"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}