Vacuum最新文献

{"title":"Vacuum system of the HEPS storage ring","authors":"Haiyi Dong,&nbsp;Ping He,&nbsp;Qi Li,&nbsp;Dizhou Guo,&nbsp;Xujian Wang,&nbsp;Yongsheng Ma,&nbsp;Baiqi Liu,&nbsp;Tao Huang,&nbsp;Lei Zhang,&nbsp;Fei Sun,&nbsp;Tianfeng Liu,&nbsp;Pilong Tian,&nbsp;Yuchen Yang,&nbsp;Qi Yang,&nbsp;Pengcheng Wang,&nbsp;Jiaming Liu,&nbsp;Shunming Liu,&nbsp;Xiaoyang Sun,&nbsp;Bangle Zhu,&nbsp;Biao Tan,&nbsp;Saike Tian","doi":"10.1016/j.vacuum.2025.114520","DOIUrl":"10.1016/j.vacuum.2025.114520","url":null,"abstract":"<div><div>HEPS (High Energy Photon Source) is a 4th generation ring-based light source with a beam energy of 6 GeV and a beam current intensity of 200 mA. The HEPS accelerator consists of a linac, a booster, a storage ring, and three transport lines connecting the linac, booster, and storage ring. The storage ring serves as the core region of HEPS. In this paper, the characteristics of the storage ring vacuum system are reviewed, and the designs and fabrication approaches for some key vacuum components are detailed. The main challenges include the extrusion of thin-walled CuCrZr vacuum chambers and the application of NEG (Non Evaporable Getters) coatings on their inner surfaces. These are used to mitigate substantial heat loads induced by synchrotron radiation along the vacuum chamber walls and provide an effective pumping speed for conductance-limited vacuum pipes with an inner diameter of 22 mm. The installation of the storage ring vacuum system started in November 2023, and finished in July 2024. Vacuum sectors were in-situ baked and activated for NEG films in the vacuum chambers, an average static pressure of 3 × 10⁻⁸Pa has been reached, which is better than the specification. These results confirm the feasibility of the storage ring vacuum system, covering aspects from the design and fabrication of components such as vacuum chambers, RF shielding bellows, and photon absorbers to processes like NEG coating via magnetron sputtering, installation, and in-situ activation of NEG films. After more than 20 days of conditioning, the beam current of the HEPS storage ring reached 12 mA, marking a milestone progress in the HEPS accelerator. At present, the accumulated beam dose is about 30 Ah (Jan.2025), the vacuum system performs well, the dynamic pressure of the storage ring is expected to decrease with the increase of accumulated beam dose.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114520"},"PeriodicalIF":3.8,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144335648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nb-N solid solution strengthening in (FeCoNiCuNb)Nx high-entropy alloy nitride films","authors":"Yantao Li ,&nbsp;Xianting Yang ,&nbsp;Yefeng Zhou ,&nbsp;Jun Liang ,&nbsp;Yu Ni ,&nbsp;Yurong Zhou ,&nbsp;Deming Huang ,&nbsp;Xin Jiang ,&nbsp;Donglin Ma","doi":"10.1016/j.vacuum.2025.114536","DOIUrl":"10.1016/j.vacuum.2025.114536","url":null,"abstract":"<div><div>High-entropy alloy films composed of 3d transition metals exhibit excellent plasticity, but their strength and wear resistance remain inferior to refractory-metal-based HEA systems. In this paper, a small amount of Nb atoms were introduced into the FeCoNiCu system, and (FeCoNiCuNb)N_x high-entropy alloy nitride films (HENFs) were prepared by reactive magnetron sputtering. The results show that N atoms combine with Nb and Nb-N is uniformly distributed in the film without segregation. With the introduction of N atoms, the film structure still maintains FCC structure, and the grains are refined, and the amorphous region at the grain interface is observed with the high-resolution image. Due to the solid solution strengthening effect, the hardness of the (FeCoNiCuNb)N_x HENFs reaches a maximum of 9.48 GPa and the wear rate reaches a minimum of 1.01 × 10⁻⁶ mm/N·m. Polarization and electrochemical impedance spectrum measurements revealed that all HENFs show good corrosion resistance comparable to the 304 stainless steel in 3.5 wt% NaCl solution. The Nb-N strengthened (FeCoNiCuNb)N_x HENFs can effectively improve the wear resistance without loss of corrosion resistance, which provides a feasible method for the strengthening of 3d transition metals family high-entropy alloy films.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114536"},"PeriodicalIF":3.8,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144335646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Crystallographic dependence of ultrafast laser induced crack generation in single-crystal sapphire","authors":"Liu Tongwei,&nbsp;Tang Haoxing,&nbsp;Dong Xin,&nbsp;Yang Dingkun,&nbsp;Luo Zhiyong","doi":"10.1016/j.vacuum.2025.114528","DOIUrl":"10.1016/j.vacuum.2025.114528","url":null,"abstract":"<div><div>Crack generation is a bottleneck in the processing of sapphire crystals using ultrafast laser. This paper aims to investigate the influence of crystal orientation on the laser-induced crack generation in single-crystal sapphire at the atomic scale. A molecular dynamics model of sapphire crystal irradiated by ultrafast laser was constructed, and the influence of crystal orientation on atomic number density and pressure was analyzed. The results show that smaller interplanar spacing enhances the material's resistance to damage, resulting in a faster stabilization rate of atomic number density within the crystal. The relationship among stress wave propagation speed, interplanar spacing and the direction of crack initiation in sapphire crystals was explored. It was found that crystal orientations with lower stress wave propagation speeds are more prone to crack generation. Laser induced sapphire crystal crack generation experiments were conducted, and the results showed that cracks were most likely to occur along the (10-10) direction, followed by the (01-01) direction, and the (1–100) direction exhibited the least susceptibility when laser irradiation on the C-plane of sapphire crystals. The research of this article will provide theoretical and technological guidance for suppressing the generation of laser-induced cracks in sapphire crystals.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114528"},"PeriodicalIF":3.8,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144335645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gas-refractometry-based high resolution continuous measurements in a medium vacuum","authors":"Dong Fan ,&nbsp;Detian Li ,&nbsp;Zhenhua Xi ,&nbsp;Kun Liu ,&nbsp;Wenjie Jia ,&nbsp;Yongjun Cheng ,&nbsp;Wenxi Zhang","doi":"10.1016/j.vacuum.2025.114524","DOIUrl":"10.1016/j.vacuum.2025.114524","url":null,"abstract":"<div><div>While an optical vacuum pressure standard (OVPS) using gas refractometry accurately offers a wide pressure measurement range, the measurement accuracy in the medium vacuum range is restricted by various factors. In this study, an optical vacuum pressure standard based on the refractive index measurement of gas in a Fabry-Perot (FP) cavity was developed. The measurement pressures from OVPS and the capacitance diaphragm gauge (CDG) were compared in the medium vacuum range of 4 Pa∼130 Pa. The relative differences between the two measurements ranged from 0.01 % to 0.835 %, with reproducibility relative differences ranging from 0.0323 % to 1.19 %. These results were achieved using argon gas properties. Furthermore, a high-gain, low-noise frequency measurement system based on a rubidium atomic clock frequency reference was constructed to realize the accurate measurement of beat frequency, and the argon pressure resolution was verified to be less than 5 mPa. Finally, this paper also considered the factors influencing the uncertainty of medium vacuum measurements and proposed corresponding solutions. The uncertainty of the OVPS was evaluated to be [(31 mPa)²+(77 × 10⁻⁶<em>p</em>)²]^1/2 (<em>k</em> = 2).</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114524"},"PeriodicalIF":3.8,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144365317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Defect formation and irradiation response in Ti-5331 alloy under helium ion exposure","authors":"Zhen Wu ,&nbsp;Yunmei Shi ,&nbsp;Qigui Yang ,&nbsp;Zhian Song ,&nbsp;Qianqian Wang ,&nbsp;Rui Ma ,&nbsp;Peng Zhang ,&nbsp;Yu Chen ,&nbsp;Zhihong Li ,&nbsp;Runsheng Yu ,&nbsp;Te Zhu ,&nbsp;Mingpan Wan ,&nbsp;Xingzhong Cao","doi":"10.1016/j.vacuum.2025.114526","DOIUrl":"10.1016/j.vacuum.2025.114526","url":null,"abstract":"<div><div>The radiation resistance of titanium alloys and their mechanical responses to irradiation-induced defects are still not fully understood, particularly among the materials being considered for advanced nuclear reactors. In this study, we combine experimental methods with first-principles calculations to explore the formation and evolution of helium bubbles in the Ti-5331 alloy (Ti-5Al-3V-3Zr-0.7Cr) subjected to helium ion irradiation across varying fluences and temperatures. Our findings reveal that vacancy-helium atom complexes (He_mV_n) form in the Ti-5331 alloy, which then evolve into helium bubbles. The size and distribution density of these bubbles correlate with both the irradiation fluences and the temperatures employed. Significantly, we quantitatively estimate the average number of helium atoms trapped within vacancy clusters for sub-nanometer bubbles observed at low irradiation fluences, using a combination of first-principles calculations and experimental data. Notably, we identify approximately 1–2 helium atoms trapped within clusters of 13 vacancy sites, representing the primary type of vacancy defects introduced by irradiation. Additionally, we discuss the significant irradiation hardening observed, primarily due to the strong interactions between larger helium bubbles and defect clusters. These findings provide crucial insights into the complex interplay among irradiation-induced vacancy defects, bubble formation, and the evolution of mechanical properties in titanium alloys.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114526"},"PeriodicalIF":3.8,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144364513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gold cluster decorated nanoporous network of nickel oxide for energy storage application","authors":"Sneha R. Bhosale ,&nbsp;Rakhee R. Bhosale ,&nbsp;Vithoba L. Patil ,&nbsp;Asiya M. Tamboli ,&nbsp;Mohaseen S. Tamboli ,&nbsp;Rushikesh P. Dhavale ,&nbsp;Sanjay S. Kolekar ,&nbsp;Prashant V. Anbhule","doi":"10.1016/j.vacuum.2025.114522","DOIUrl":"10.1016/j.vacuum.2025.114522","url":null,"abstract":"<div><div>Recently, the development of architecturally reformed metal-oxide hetero-architectures with enhanced energy characteristics has sparked substantial research interest. In this work, we reported the decoration of gold cluster using the dip coating technique on nickel oxide films. This work employed NiO nanoflowers for electrochemical performance and utilized them as a support for a gold cluster. The effect of gold coating on the NiO structure and electrochemical characteristics are studied. According to the findings, the produced materials have an elevated specific capacitance of 3165.4 F g⁻¹ when Au is present. Au decorated NiO exhibited superior electrochemical performance for energy storage applications due to its catalytic properties boost all the parameters.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114522"},"PeriodicalIF":3.8,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144330997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Substitutional doping-induced tunable van der Waals heterostructures of X-WSe2/Ti2CO2 in optoelectronic properties: A first-principles study","authors":"Zhixin Hou ,&nbsp;Jieshi Chen ,&nbsp;Yi Zheng ,&nbsp;Chun Yu ,&nbsp;Hao Lu ,&nbsp;Kai Xiong ,&nbsp;Shuye Zhang","doi":"10.1016/j.vacuum.2025.114529","DOIUrl":"10.1016/j.vacuum.2025.114529","url":null,"abstract":"<div><div>This study constructed the X-WSe₂/Ti₂CO₂ vdW-HS and explored the doping effects of transition metal elements X (X being V, Nb, Ta, Mo, or Tc) on the W or Se sites of WSe₂ in the heterojunction. First-principles calculations revealed that all structures possess stability, with those doped at the W site mostly exhibiting metallic properties; whereas those doped at the Se site are all semiconductors, and for elements in the same period, Nb, Mo, and Tc doping reduced the bandgap from 0.4 eV to 0.32 eV–0.213 eV. The order of interlayer charge transfer in the heterojunction is Tc &gt; Mo &gt; V &gt; Ta &gt; Nb (W site) and Ta &gt; Nb &gt; Mo &gt; V &gt; Tc (Se site). The optical absorption coefficient in the visible light range can reach as high as 4.8 × 10⁵ cm⁻¹ (Mo-doped Se). The main reason for these phenomena is that the doping of X has different filling effects on the CB and VB of the system, causing shifts in the <em>E</em>_<em>f</em> and atomic orbitals, thereby achieving regulation of the heterojunction properties. These findings provide a theoretical basis for the design and optimization of high-performance optoelectronic devices.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114529"},"PeriodicalIF":3.8,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144338629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Process parameter optimization and corrosion properties of the AlCrTiV medium entropy alloy films","authors":"Ying Liu ,&nbsp;Zhaobing Cai ,&nbsp;Juanjuan Hu ,&nbsp;Lei Yan ,&nbsp;Bingxu Wang ,&nbsp;Le Gu","doi":"10.1016/j.vacuum.2025.114517","DOIUrl":"10.1016/j.vacuum.2025.114517","url":null,"abstract":"<div><div>In this work, based on an orthogonal experimental design, nine groups of the AlCrTiV medium-entropy alloy (MEA) films were prepared by vacuum magnetron sputtering under different deposition parameters (sputtering power, substrate temperature, and bias voltage), and the influence of deposition parameters on their corrosion property (in 3.5 wt % NaCl solution) was studied in detail. Through range analysis, we identified the optimal process parameters for achieving superior corrosion performance (sputtering power of 800 W, substrate temperature of 400 °C, bias voltage of 100 V). The research results indicate that the sputtering power has the greatest impact on the corrosion properties of the films. Specifically, corrosion resistance diminishes as power increases, with the optimal corrosion resistance observed at 800 W. After corrosion, the surfaces of the films are composed of the oxidized state and the unoxidized state of the metal, and the corrosion mechanism is pitting. The enrichment of Cr and O elements in the pitting pores may be related to the rupture and regeneration of Cr₂O₃ in the passivation film. The XPS results suggest that enhanced corrosion resistance correlates with a higher concentration of Al₂O₃ and Cr₂O₃ in the dense passivation film.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114517"},"PeriodicalIF":3.8,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144330999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Plasma power-dependent properties of Ga-S-Se films prepared by PECVD for photodetection applications","authors":"Mikhail A. Kudryashov ,&nbsp;Aleksey V. Nezhdanov ,&nbsp;Yuliya P. Kudryashova ,&nbsp;Aleksandr I. Mashin ,&nbsp;Ruslan N. Kriukov ,&nbsp;Diana G. Fukina ,&nbsp;Maksim A. Vshivtsev ,&nbsp;Vladimir M. Malyshev","doi":"10.1016/j.vacuum.2025.114513","DOIUrl":"10.1016/j.vacuum.2025.114513","url":null,"abstract":"<div><div>Ga-S-Se films have been prepared by plasma-enhanced chemical vapor deposition (PECVD). In this study, highly pure elemental gallium, sulphur and selenium with 99.9999 vol% purity were utilised as starting materials. A non-equilibrium low-temperature RF-plasma (40.68 MHz) at reduced pressure (0.1 Torr) was the initiator of chemical transformations. The effect of plasma discharge power on the properties of the deposited films was investigated. All samples exhibiting stoichiometry close to GaS_1−xSe_x c <em>x</em> ≈ 0.6. The results of X-ray diffraction and Raman spectroscopy indicate that the films are grown in a layered hexagonal structure with lattice parameters <em>a</em> = 3.68 Å и <em>c</em> = 15.77 Å. The surface of the prepared samples is found to be strongly dependent on the used plasma power. The analysis of the transmission spectra indicates that the energy of the indirect band gap decreases from 2.27 to 2.21 eV with increasing plasma discharge power. All samples showed clear photoluminescence peaks at 561–565 nm. Current-voltage characteristic, measured under both dark and illuminated conditions, demonstrate a pronounced photoresponse in Ga-S-Se films deposited at 50 and 70 W, which makes it possible to use such materials for the development of visible matrix photodetectors.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114513"},"PeriodicalIF":3.8,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144307100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly sensitive ethylene glycol gas sensor based on SnO2/ZnO heterojunction composites","authors":"JunTang Dong ,&nbsp;Te Duan ,&nbsp;TingTing Shao ,&nbsp;NingJuan Li ,&nbsp;JiaKe Guo ,&nbsp;Fuchun Zhang","doi":"10.1016/j.vacuum.2025.114503","DOIUrl":"10.1016/j.vacuum.2025.114503","url":null,"abstract":"<div><div>Ethylene glycol (EG), widely used in industry, poses severe health and environmental risks even at low concentrations, necessitating the development of highly sensitive gas sensors. Although ZnO and SnO₂ are promising semiconductor metal oxides for gas detection, their single-component limitations hinder optimal performance. This work focuses on SnO₂-decorated ZnO nanosheets, where a heterojunction structure is constructed to overcome individual material drawbacks. The aim is to enhance EG detection performance through compositional tuning and interface engineering. SnO₂/ZnO composites with varying SnO₂ contents were synthesized via a one-step hydrothermal method and systematically evaluated. The SnO₂/ZnO-1 sample (1:1 M ratio) exhibited the best performance, achieving a response of 169.89 to 100 ppm EG at 240 °C, a detection limit as low as 158 ppb, high linearity (R² = 0.99593), and strong repeatability and selectivity. Structural characterizations confirmed the successful formation of an n–n heterojunction and increased surface area and mesoporosity, enhancing gas adsorption and electron transfer. XPS revealed a higher proportion of adsorbed oxygen (30.21 %) in the composite versus pure ZnO (27.28 %), contributing to better reactivity. This research demonstrates that tailoring heterostructure interfaces and material morphology significantly improves gas sensing performance, offering a promising strategy for reliable and real-time EG detection in environmental and safety monitoring.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114503"},"PeriodicalIF":3.8,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144365319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}