Vacuum最新文献

{"title":"Distribution of ion energy and concentration in the expansion region of radio-frequency inductive coupled plasmas with deuterium and deuterium-nitrogen mixtures","authors":"Xiao Xi ,&nbsp;Xuxu Liu ,&nbsp;Wei Jin ,&nbsp;Jipeng Zhu ,&nbsp;Hai Jin ,&nbsp;Xiaoqiu Ye ,&nbsp;Changan Chen","doi":"10.1016/j.vacuum.2026.115125","DOIUrl":"10.1016/j.vacuum.2026.115125","url":null,"abstract":"<div><div>In this study, a 13.56 MHz radio frequency power supply was used to generate an external solenoid inductively coupled plasma source. An ion energy mass spectrometer equipped with a Bessel box and quadrupole mass filter was employed to investigate the characteristics of ion in expansion region. The ion species, concentration and their energy distributions with different working gases, including deuterium, nitrogen and their mixtures, have been analyzed by adjusting the gas flow rate or relative concentration over a wide parametric range. The results give the evolution of deuterium series D⁺/D₂⁺/D₃⁺, nitrogen series N⁺/N₂⁺/N₂D⁺, and the ammonia series ND⁺/ND₂⁺/ND₃⁺/ND₄⁺. The ion energy distribution of D₃⁺, N₂⁺ and ND₄⁺ display multi-peak distributions, indicating sheath voltage modulation and frequent collisional production in gas phase. The signal intensities and peak energies of these ions show distinct trends with respect to the gas flow rate. The reaction processes been given to illustrate the transformation path within and between different ion series. The reactions can be divided into three stages: ionization regime, intermediate regime and recombination regime, depending on the overall gas flow rate. And the N₂D⁺ is an effective media during molecular assisted recombination stage. These results benefit plasma processing and chemical synthesis.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115125"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146025511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Seed-layer-assisted crystallization engineering of CdS for high-performance CdS/SnS heterojunction solar cells","authors":"Yanping Lv ,&nbsp;Ziyi Qin ,&nbsp;Menghe Liu ,&nbsp;Jun Zhang ,&nbsp;Ming Yang ,&nbsp;Hao Wu","doi":"10.1016/j.vacuum.2026.115103","DOIUrl":"10.1016/j.vacuum.2026.115103","url":null,"abstract":"<div><div>Tin(II) sulfide (SnS) has exhibited promising characteristics for photovoltaic applications, yet the efficiency of SnS thin-film photovoltaics is still constrained by carrier transport bottlenecks at interfaces and defect-mediated recombination near the buffer/absorber heterojunction. This study systematically investigates the influence of seed-layer-induced crystallization engineering on the CdS buffer layer to optimize SnS device performance. XRD and cross-sectional TEM confirm the transition to a polycrystalline CdS structure, while TPV and EIS analyses reveal a significant enhancement in recombination resistance and carrier lifetime. Moreover, the seed-layer-induced crystallization leads to a favorable downshift of the CdS conduction band minimum, facilitating electron injection from SnS into CdS and thereby improving charge collection. As a result, the optimized FTO/CdS/SnS/Ag solar cells achieve a notable 83 % increase in PCE (from 1.16 % to 2.12 %), underscoring the critical importance of crystallinity control and interface engineering in developing high-performance SnS-based photovoltaics.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115103"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Amorphous SiCxNy:H thin films produced with various nitrogen sources: A comparative study","authors":"E. Ermakova ,&nbsp;A. Plehanov ,&nbsp;A. Saraev ,&nbsp;E. Gerasimov ,&nbsp;V. Shayapov ,&nbsp;E. Maksimovskiy ,&nbsp;V. Sulyaeva ,&nbsp;A. Kolodin ,&nbsp;M. Kosinova","doi":"10.1016/j.vacuum.2026.115106","DOIUrl":"10.1016/j.vacuum.2026.115106","url":null,"abstract":"<div><div>Hydrogenated silicon carbonitride (SiC_xN_y:H) films have received much attention for applications in microelectronics, particularly as interlayer dielectrics and copper diffusion barriers. However, the demonstrated properties are crucially dependent on the elemental composition and chemical bonding structure. Thus, precise control over the type of precursors and deposition conditions is necessary for the development of efficient experimental procedure. In this study, SiC_xN_y:H films were deposited at 200–450 °C by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilane (HMDS, Me₃Si–SiMe₃) in mixtures with nitrogen or ammonia, as well as hexamethyldisilazane (HMDSN, Me₃Si–NH–SiMe₃) with helium. The motivation is to establish a fundamental correlation between the plasma chemistry, driven by different nitrogen sources (N₂, NH₃, or the amine group in HMDSN), and film properties. Under low-power conditions the three distinct series of non-porous materials, characterized as Si–C-type and two Si–N-type, were obtained. Refractive index and dielectric constant changed in the range of 1.62–1.99 and 3.8–5.4, respectively, were related to the deposition conditions and chemical composition of the films. Transmittance electron microscopy (TEM) investigation showed the films are suitable as diffusion barriers for Cu/low-k damascene integration.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115106"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146080116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxidation behavior and synergistic surface-interface degradation mechanism of CrSi coatings in 1200 °C steam","authors":"Song Zeng,&nbsp;Chang Jiang,&nbsp;Youxing He,&nbsp;Yiyou Wu,&nbsp;Xuebing Yang,&nbsp;Jiuming Yu,&nbsp;Linwei Zhang,&nbsp;Wenfu Chen","doi":"10.1016/j.vacuum.2026.115143","DOIUrl":"10.1016/j.vacuum.2026.115143","url":null,"abstract":"<div><div>This study reveals the synergistic degradation mechanism between surface oxide layer and interface diffusion barrier in CrSi (7.7 at.% Si) coatings during 1–8 h oxidation in 1200 °C steam. Initially (0–1 h), a dense Cr₂O₃/SiO₂ duplex layer develops on the surface, while a stoichiometric Zr₂Si diffusion barrier develops at the interface, providing optimal protection. During 2–6 h, Si depletion causes the transformation of subsurface SiO₂ from continuous to discrete particles and triggers Zr-rich phase precipitation within the Zr₂Si layer, leading to progressive performance degradation. At the failure stage (7–8 h), following the breakdown of the Zr₂Si diffusion barrier, ZrO₂ networks form and serve as short-circuit paths, which significantly accelerate oxygen transport to the substrate.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115143"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146080217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancement of interfacial structure and mechanical properties of Zr-3 alloy and 304L stainless steel diffusion bonded joint via Ti interlayer introduction","authors":"Zhuofu Wei ,&nbsp;Xiwen Hu ,&nbsp;Shiyu Niu ,&nbsp;Yuxin Wang ,&nbsp;Zhongliang Liu ,&nbsp;Zhenwen Yang ,&nbsp;Ying Wang","doi":"10.1016/j.vacuum.2026.115129","DOIUrl":"10.1016/j.vacuum.2026.115129","url":null,"abstract":"<div><div>To obtain the high-strength joint of zirconium alloy and stainless steel for nuclear applications, this study utilized a Ti interlayer for diffusion bonding of Zr-3 alloy and 304L stainless steel. Direct diffusion bonding resulted in the formation of numerous brittle intermetallic compounds, including Zr₂(Fe, Ni) and Zr(Fe, Cr)₂. The introduction of the Ti interlayer eliminated these phases, and the typical interfacial reaction layer of the joints was Zr-3/(Ti, Zr)/Ti/NiTi/TiFe/TiCr₂/(Fe, Cr)/304L. The diffusion layer at the Ti/304L interface was identified as the key factor governing the joint's mechanical properties. Within this layer, TiFe and NiTi phases formed preferentially, followed by TiCr₂ and (Fe, Cr) phases. Higher bonding temperatures and longer holding times significantly promoted the interdiffusion of Ti with Fe and Cr from the 304L steel. This enrichment of brittle TiFe and TiCr₂ phases at the interface consequently degraded the joint properties. The joint achieved a peak shear strength of 247 MPa under the parameters of 760 °C/60 min/10 MPa, representing a 115 % increase compared to the direct diffusion-bonded joint. The fracture was primarily initiated in the brittle phases, such as TiFe and TiCr₂, within the Ti/304L diffusion layer.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115129"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146080117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Elucidating long period stacking ordered phases in Mg-Gd-Ag alloys with Zn doping: A synergistic experimental and first-principles study","authors":"Yao Tao ,&nbsp;Xia Chen ,&nbsp;Qiang Chen ,&nbsp;Bin Chen","doi":"10.1016/j.vacuum.2026.115120","DOIUrl":"10.1016/j.vacuum.2026.115120","url":null,"abstract":"<div><div>Magnesium alloys are promising candidates for lightweight engineering applications. However, the presence of Ag impedes the formation of long-period stacking ordered (LPSO) phases in Mg-Gd-Ag alloys, thereby restricting the optimization of their mechanical properties. While Zn doping is well-documented to facilitate LPSO phase formation in Mg-RE-TM systems, the underlying mechanism by which Zn modulates this process in Ag-containing Mg-Gd alloys remains elusive. Herein, we investigate the LPSO phases in Mg₁₄₀Gd₁₆TM₁₂ (TM = Ag, Zn) alloys with varying Zn/Ag ratios via HAADF-STEM and first-principles calculations, clarifying their thermodynamic stability, mechanical properties, and electronic structures. Experimental results confirm the formation of 14H and 18R LPSO phases, with Zn substituting Ag to facilitate LPSO nucleation. First-principles calculations show that all Zn-containing phases exhibit negative formation enthalpies, with increasing Zn content enhancing thermodynamic stability (Mg₁₄₀Gd₁₆Zn₁₂ being the most stable). Zn doping reduces Young's and shear moduli but improves ductility, as indicated by the increasing Pugh ratio (1.49–1.55) and Poisson's ratio (0.226–0.233). Electronic structure analysis reveals deep hybridization of Mg-p, Gd-d, and Zn-d orbitals in the −2.5∼2.0 eV range; Zn enrichment weakens Ag's bridging effect, making Zn-d orbitals dominant in bonding. This work provides insights for optimizing Mg-Gd-Ag alloy performance via composition regulation.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115120"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146025495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CMOS-compatible MBE-grown germanium quantum dots for high-performance photodetectors and solar cells","authors":"S. Ghalab ,&nbsp;Mansour Aouassa ,&nbsp;A.K. Aladim ,&nbsp;Saud A. Algarni ,&nbsp;Majed Alharbi ,&nbsp;Mohammed Ibrahim ,&nbsp;K.M.A. Saron ,&nbsp;Mohammed Bouabdellaoui ,&nbsp;Isabelle Berbezier","doi":"10.1016/j.vacuum.2026.115124","DOIUrl":"10.1016/j.vacuum.2026.115124","url":null,"abstract":"<div><div>In this work, we grow and investigate CMOS-compatible Ge quantum dots (Ge QDs) integrated into metal–oxide–semiconductor (MOS) photodetectors, with a focus on their electrical transport and photocurrent response. Crystalline Ge QDs with an average diameter of ≈5.8 nm, hemispherical shape, and a high density (∼5 × 10¹² cm⁻²) are formed by solid-state dewetting of a 1 nm amorphous Ge film grown by molecular beam epitaxy (MBE) on SiO₂/Si, subsequently capped with a 45 nm SiO₂ layer, and finally converted into MOS Ge-QD photodetectors by depositing transparent AuPd pads. Temperature-dependent current–voltage and capacitance–voltage measurements, complemented by photocurrent analysis, reveal the formation of a Schottky-like MOS photodetector exhibiting a rectification ratio close to 10² and a low dark current. Charge transport is governed by thermionic emission assisted by Fowler–Nordheim tunneling, with the embedded Ge QDs acting as efficient charge-relay centers in the oxide, facilitating carrier injection and reducing the threshold voltage without degrading the capacitive behavior of the structure. Under illumination, the Ge-QD–based MOS photodetectors show a pronounced enhancement of photosensitivity, particularly in the visible spectral range, consistent with strong quantum confinement in the QDs. These results demonstrate that MBE-grown Ge QDs obtained by solid-state dewetting provide a promising platform for the realization of CMOS-compatible, low-power, high-performance optoelectronic devices, especially photodetectors and, more broadly, quantum-dot–engineered solar-cell architectures.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115124"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146025500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on the phase interface structure and orientation relationship of the intermetallic compounds layer in Sn-3.0Ag-0.5Cu/Cu joints during isothermal aging","authors":"Dongdong Chen ,&nbsp;Zan Long ,&nbsp;Sirong Zhu ,&nbsp;Huaxin Liang ,&nbsp;Yuan Teng ,&nbsp;Cunji Pu ,&nbsp;Jikang Yan ,&nbsp;Yanqing Lai ,&nbsp;Jianhong Yi","doi":"10.1016/j.vacuum.2026.115123","DOIUrl":"10.1016/j.vacuum.2026.115123","url":null,"abstract":"<div><div>The structure of the interfacial layer is important for evaluating the reliability of an electronic package. Herein, we comprehensively investigated the changes in morphology and thickness of intermetallic compounds interlayer during aging, the diffusion of elements during the reflow soldering and isothermal aging, as well as the phase structural and crystallographic relationships among β-Sn, Cu₆Sn₅, and Cu₃Sn phases. After aging, Cu₆Sn₅<strong>/</strong>β-Sn interface exhibited special <span><math><mrow><msub><mrow><mo>[</mo><mn>010</mn><mo>]</mo></mrow><mrow><mi>β</mi><mo>−</mo><mi>S</mi><mi>n</mi></mrow></msub><mo>/</mo><mo>/</mo><msub><mrow><mo>[</mo><mn>210</mn><mo>]</mo></mrow><mrow><mi>C</mi><msub><mi>u</mi><mn>6</mn></msub><mi>S</mi><msub><mi>n</mi><mn>5</mn></msub></mrow></msub></mrow></math></span> crystallographic relationship, while the angle between <span><math><mrow><msub><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>‾</mo></mover><mn>01</mn></mrow><mo>)</mo></mrow><mrow><mi>β</mi><mo>−</mo><mi>S</mi><mi>n</mi></mrow></msub></mrow></math></span> and <span><math><mrow><msub><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>‾</mo></mover><mn>21</mn></mrow><mo>)</mo></mrow><mrow><mi>C</mi><msub><mi>u</mi><mn>6</mn></msub><mi>S</mi><msub><mi>n</mi><mn>5</mn></msub></mrow></msub></mrow></math></span> was 174.1°. Cu₆Sn₅<strong>/</strong>Cu₃Sn interface showed special <span><math><mrow><msub><mrow><mo>[</mo><mn>111</mn><mo>]</mo></mrow><mrow><mi>C</mi><msub><mi>u</mi><mn>6</mn></msub><mi>S</mi><mi>n</mi><mn>5</mn></mrow></msub><mo>/</mo><mo>/</mo><msub><mrow><mo>[</mo><mn>001</mn><mo>]</mo></mrow><mrow><mi>C</mi><msub><mi>u</mi><mn>3</mn></msub><mi>S</mi><mi>n</mi></mrow></msub></mrow></math></span> crystallographic relationship, while the angle between <span><math><mrow><msub><mrow><mo>(</mo><mrow><mn>3</mn><mover><mn>1</mn><mo>‾</mo></mover><mover><mn>2</mn><mo>‾</mo></mover></mrow><mo>)</mo></mrow><mrow><mi>C</mi><msub><mi>u</mi><mn>6</mn></msub><mi>S</mi><msub><mi>n</mi><mn>5</mn></msub></mrow></msub></mrow></math></span> and <span><math><mrow><msub><mrow><mo>(</mo><mrow><mn>2</mn><mover><mn>1</mn><mo>‾</mo></mover><mn>0</mn></mrow><mo>)</mo></mrow><mrow><mi>C</mi><msub><mi>u</mi><mn>3</mn></msub><mi>S</mi><mi>n</mi></mrow></msub></mrow></math></span> was 58.7°. The growth patterns of Cu₆Sn₅ and Cu₃Sn phases during isothermal aging were investigated further based on the interface orientation relationship. This study reported the growth of the interface IMCs layer via the interfacial structure of Cu₆Sn₅<strong>/</strong>β-Sn, Cu₆Sn₅<strong>/</strong>Cu₃Sn, and Cu₃Sn/Cu, which further improves the orientation relationship of interface phases. Meanwhile, this work provides a valuable basis for improving the reliability of solder service.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115123"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146025498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A carbon nanotubes cathode ionization gauge with a straight path of electrons","authors":"Guoheng Yu ,&nbsp;Detian Li ,&nbsp;Huzhong Zhang ,&nbsp;Weijun Huang ,&nbsp;Changkun Dong ,&nbsp;Zhenhua Xi ,&nbsp;Gang Li ,&nbsp;Zhangyi Zhong ,&nbsp;Weidong Kang","doi":"10.1016/j.vacuum.2026.115102","DOIUrl":"10.1016/j.vacuum.2026.115102","url":null,"abstract":"<div><div>Carbon nanotubes (CNTs) are a type of field emission cathode material with broad application potential. Compared with hot filament cathodes, CNTs cathodes possess advantages such as low operating temperature and energy efficiency. In this article, a CNTs electron emitter is integrated into an ionization gauge featuring a straight electron path. A series of tests were performed on the CNTs cathode and the prototype gauge. The optimal operating potential of the prototype gauge was determined through simulations and experiments. The prototype achieved a sensitivity of 0.317 Pa⁻¹ in argon and 0.240 Pa⁻¹ in nitrogen. This prototype gauge exhibits good linearity in the range from 10⁻⁶ Pa to 10⁻³ Pa in argon and nitrogen, while its sensitivity fluctuations are 1.17 % and 3.2 %, and within half an hour, the sensitivity fluctuations in the two gases are 1.6 % and 2.2 % respectively. Under simulated normal operating conditions, the repeatability is less than 3 %. This novel developed ionization gauge has simultaneously achieved high sensitivity and good stability. This study provides insights for the application of CNTs cathodes in the ionization gauges.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115102"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of block cathode through sedimentation process for high current pulsed electron beam emission","authors":"Bohang Yang ,&nbsp;Jie Yu ,&nbsp;Chenxiang Jin ,&nbsp;Ling Zhang ,&nbsp;Huihui Wang ,&nbsp;Shengzhi Hao","doi":"10.1016/j.vacuum.2026.115150","DOIUrl":"10.1016/j.vacuum.2026.115150","url":null,"abstract":"<div><div>A novel preparation technique of block cathode used for high current pulsed electron beam (HCPEB) emission was essayed. Through the sedimentation of short carbon fibers (SCF) of length 6 mm and adhesion of phenol formaldehyde resin (PFR) of concentration from 6 to 24 wt%, the discrete SCF could be integrated randomly and constituted a desirable structure. The microstructure of cathode was investigated by using X-ray microscopy (XRM) and scanning electron microscopy (SEM). The results showed that a stacked network of SCF was formed homogenously without the bundling phenomena. The carbonized PFR was found at the intersections of SCF. With the PFR of 24 wt%, the severe agglomeration was noticed with an appearance of spheres. The density of cathode increased with the content of SCF and PFR, as well as its capacity of structure maintenance. Contrarily, the resistance rate and evacuation speed were ruined by the density of block cathode. Considering the working requirements, the optimized parameter was selected as the SCF of 6 g and PFR of 12 wt%. The cathode was tested by the HCPEB emission experiment and exhibited satisfactory performance, including the spot size, energy uniformity, emission stability and long-term durability performance.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"247 ","pages":"Article 115150"},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146174071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}