两种不同图案衬底上InAs阵列纳米线生长机理的研究

IF 3.8 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum Pub Date : 2025-06-24 DOI:10.1016/j.vacuum.2025.114539

Xiaoye Wang , Xiaoguang Yang , Tao Yang

{"title":"两种不同图案衬底上InAs阵列纳米线生长机理的研究","authors":"Xiaoye Wang , Xiaoguang Yang , Tao Yang","doi":"10.1016/j.vacuum.2025.114539","DOIUrl":null,"url":null,"abstract":"<div><div>Si/SiO<sub>2</sub> patterned substrates are usually employed to assist the positioning growth of array nanowires, but the detailed growth mechanism has not been thoroughly investigated. In this work, two completely different methods were adopted to fabricate Si/SiO<sub>2</sub> patterned substrates, and the InAs array nanowires grown on them via MOCVD presented some distinct growth results. By deeply analyzing the different processes and structures of the two methods for preparing patterned substrates, the different growth mechanisms of the two array nanowires were studied. Moreover, the method of preparing Si/SiO<sub>2</sub> patterned substrates using Si<sub>3</sub>N<sub>4</sub> as a transition layer can further reduce the diameter of naonholes and solve the problem that the diameter of nanoholes of the Si/SiO<sub>2</sub> patterned substrates prepared by the traditional method is difficult to be further reduced.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114539"},"PeriodicalIF":3.8000,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study on growth mechanism of InAs array nanowires on two different patterned substrates\",\"authors\":\"Xiaoye Wang , Xiaoguang Yang , Tao Yang\",\"doi\":\"10.1016/j.vacuum.2025.114539\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Si/SiO<sub>2</sub> patterned substrates are usually employed to assist the positioning growth of array nanowires, but the detailed growth mechanism has not been thoroughly investigated. In this work, two completely different methods were adopted to fabricate Si/SiO<sub>2</sub> patterned substrates, and the InAs array nanowires grown on them via MOCVD presented some distinct growth results. By deeply analyzing the different processes and structures of the two methods for preparing patterned substrates, the different growth mechanisms of the two array nanowires were studied. Moreover, the method of preparing Si/SiO<sub>2</sub> patterned substrates using Si<sub>3</sub>N<sub>4</sub> as a transition layer can further reduce the diameter of naonholes and solve the problem that the diameter of nanoholes of the Si/SiO<sub>2</sub> patterned substrates prepared by the traditional method is difficult to be further reduced.</div></div>\",\"PeriodicalId\":23559,\"journal\":{\"name\":\"Vacuum\",\"volume\":\"240 \",\"pages\":\"Article 114539\"},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2025-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Vacuum\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0042207X25005299\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X25005299","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

Si/SiO2图案衬底通常用于阵列纳米线的定位生长，但详细的生长机制尚未深入研究。本文采用两种完全不同的方法制备了Si/SiO2图案衬底，通过MOCVD在其上生长的InAs阵列纳米线呈现出不同的生长结果。通过深入分析两种方法制备图案衬底的不同工艺和结构，研究了两种阵列纳米线的不同生长机理。此外，以Si3N4为过渡层制备Si/SiO2图案衬底的方法可以进一步减小纳米孔直径，解决了传统方法制备的Si/SiO2图案衬底纳米孔直径难以进一步减小的问题。

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Study on growth mechanism of InAs array nanowires on two different patterned substrates

Si/SiO₂ patterned substrates are usually employed to assist the positioning growth of array nanowires, but the detailed growth mechanism has not been thoroughly investigated. In this work, two completely different methods were adopted to fabricate Si/SiO₂ patterned substrates, and the InAs array nanowires grown on them via MOCVD presented some distinct growth results. By deeply analyzing the different processes and structures of the two methods for preparing patterned substrates, the different growth mechanisms of the two array nanowires were studied. Moreover, the method of preparing Si/SiO₂ patterned substrates using Si₃N₄ as a transition layer can further reduce the diameter of naonholes and solve the problem that the diameter of nanoholes of the Si/SiO₂ patterned substrates prepared by the traditional method is difficult to be further reduced.

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来源期刊

Vacuum 工程技术-材料科学：综合

CiteScore

6.80

自引率

17.50%

发文量

审稿时长

34 days

期刊介绍： Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.