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2021 IEEE 14th International Conference on ASIC (ASICON)最新文献

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Ultra-low Power Access Strategy for Process-Voltage-Temperature Aware STT-MRAM 工艺电压温度敏感的STT-MRAM超低功耗接入策略
2021 IEEE 14th International Conference on ASIC (ASICON) Pub Date : 2021-10-26 DOI: 10.1109/ASICON52560.2021.9620529
Youxiong Zhang, L. Naviner, Hao Cai
{"title":"Ultra-low Power Access Strategy for Process-Voltage-Temperature Aware STT-MRAM","authors":"Youxiong Zhang, L. Naviner, Hao Cai","doi":"10.1109/ASICON52560.2021.9620529","DOIUrl":"https://doi.org/10.1109/ASICON52560.2021.9620529","url":null,"abstract":"With the development of circuit integration, low power consumption design has become the design challenge of on-chip memory. This work focuses on ultra-low power access strategy for STT-MRAM. A high margin voltage sensing amplifier (VSA) is implemented based on the bit-line (BL) parasitic capacitance, whereas a pulse-detect write self-termination is included for MRAM writing. Simulation is performed based on 28-nm CMOS and 40-nm CD magnetic tunnel junction (MTJ). Monte Carlo simulation show that the proposed sensing circuit achieves a reading yield of over 98% as well as 38% energy saving compared to previous work. Meanwhile, the self-termination scheme achieves an energy saving for more than 80%. These MRAM access strategies is well-adapted to process-voltage-temperature (PVT) variations including Tunnel Magneto Resistance (TMR) (20%-200%), temperature (0℃-120℃) and supply voltage (0.6V-1.8V).","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"228 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121351689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The study of parameters variation of nMOSFET affected by the HCI HCI对nMOSFET参数变化的影响研究
2021 IEEE 14th International Conference on ASIC (ASICON) Pub Date : 2021-10-26 DOI: 10.1109/ASICON52560.2021.9620384
Xiaowen Zhang, Xiaoling Lin, Rui Gao
{"title":"The study of parameters variation of nMOSFET affected by the HCI","authors":"Xiaowen Zhang, Xiaoling Lin, Rui Gao","doi":"10.1109/ASICON52560.2021.9620384","DOIUrl":"https://doi.org/10.1109/ASICON52560.2021.9620384","url":null,"abstract":"Hot Carrier injection (HCI) degradation is a critical issue for deep sup micro and nm technology. An Accelerated lifetime experiment is proposed in this paper to study the parameters degradation of nMOSFET induced by the HCI. A Device is considered to fail when a chosen device parameter changes by more than the specified failure criterion at worst use condition (typically VDDMAX= 1.1VDD) at a specified end of life. The results shows that the MTTF of HCI is depend on the parameter choose from. If the failure criteria is |ΔIds,sat/Ids,sat|=10%, then the MTTF has the maximum value. The model parameter m of Substrate/drain current ratio has been compared by using three stress conditions with single stress condition, it shows that the model parameter N obtained by single stress condition has low value.","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114293903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of Protective Layer Process for Micro-bridge Structure based MEMS/Sensors Application 基于MEMS/传感器的微桥结构保护层工艺优化
2021 IEEE 14th International Conference on ASIC (ASICON) Pub Date : 2021-10-26 DOI: 10.1109/ASICON52560.2021.9620462
Bo Zhang, Xiaoxu Kang, Xiaolan Zhong
{"title":"Optimization of Protective Layer Process for Micro-bridge Structure based MEMS/Sensors Application","authors":"Bo Zhang, Xiaoxu Kang, Xiaolan Zhong","doi":"10.1109/ASICON52560.2021.9620462","DOIUrl":"https://doi.org/10.1109/ASICON52560.2021.9620462","url":null,"abstract":"In this work, erosion problem was found in MEMS micro-bridge structure based sensor product during dry releasing process. Failure analysis was implemented to found the root cause. It was found that there was a void formed on the electrode layer pattern edge, and the protective layer here was much thinner than other location which introduced a weak point during releasing process. And the sensing material below was damaged by releasing gas at this weak point which causing the erosion problem. Process model was proposed for the weak point formation, and electrode layer etching process and protective layer deposition process were optimized to avoid the erosion problem. After process optimization, better step coverage performance was obtained with no void formation, and erosion problem was well solved.","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122853693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An efficient optimization method of RF passive components using RBF model 基于RBF模型的射频无源元件优化方法
2021 IEEE 14th International Conference on ASIC (ASICON) Pub Date : 2021-10-26 DOI: 10.1109/ASICON52560.2021.9620288
S.-D. Yin, Wenfei Hu, Wenyuan Zhang, Ruitao Wang, Jian Zhang, Yan Wang
{"title":"An efficient optimization method of RF passive components using RBF model","authors":"S.-D. Yin, Wenfei Hu, Wenyuan Zhang, Ruitao Wang, Jian Zhang, Yan Wang","doi":"10.1109/ASICON52560.2021.9620288","DOIUrl":"https://doi.org/10.1109/ASICON52560.2021.9620288","url":null,"abstract":"There is a growing interest in the synthesis of radio-frequency (RF) passive elements in electronic design automation communities. In this paper, we propose an efficient optimization method of RF passive components. We first build models for performances extracted from S parameters of passive components by Radial Basis Function (RBF) to ensure the accuracy and the geometric parameters of passive components are incorporated as input variables. Then Pcell is used to generate the layout of inductors or transformers in 65nm process. Finally, the model is optimized by differential evolution algorithm to obtain solutions meeting constraints. Experimental results imply that our proposed method can achieve a target inductance with up to 0.76% relative error of inductance when compared to EM simulations for inductors and up to 0.87% relative error of inductance for transformers.","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123103386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A high precision positive temperature circuit using DEM technique 基于DEM技术的高精度正温电路
2021 IEEE 14th International Conference on ASIC (ASICON) Pub Date : 2021-10-26 DOI: 10.1109/ASICON52560.2021.9620358
Hang-Ji Liu, Yu Jin, XinHang Li, Duli Yu, Kedu Han, Heming Sun
{"title":"A high precision positive temperature circuit using DEM technique","authors":"Hang-Ji Liu, Yu Jin, XinHang Li, Duli Yu, Kedu Han, Heming Sun","doi":"10.1109/ASICON52560.2021.9620358","DOIUrl":"https://doi.org/10.1109/ASICON52560.2021.9620358","url":null,"abstract":"A novel positive temperature voltage circuit structure with dynamic element matching(DEM) calibration technology is proposed in this paper. The consistency of the thermometer output voltage is an important factor to ameliorate the precision in a thermometer circuit. The introduction of DEM technology reduces the mismatch error of the current source in the positive temperature voltage generating circuit, and improves the output voltage accuracy and voltage consistency. The circuit simulation results show that the positive temperature generating circuit using the DEM calibration circuit can reduce the offset voltage by 83.4% with good linearity property within -55°C to 125°C. The proposed positive temperature voltage circuit with DEM calibration is also considered to reduce power consumption and circuit complexity.","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"80 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131123448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on Two-dimensional MXenes Based Synaptic Devices for the Future In-memory Computing 面向未来内存计算的基于二维MXenes的突触器件研究
2021 IEEE 14th International Conference on ASIC (ASICON) Pub Date : 2021-10-26 DOI: 10.1109/ASICON52560.2021.9620329
Chun Zhao, T. Zhao, Zongjie Shen, Yixin Cao, Yina Liu, Li Yang, I. Mitrovic, E. G. Lim, Cezhou Zhao
{"title":"Research on Two-dimensional MXenes Based Synaptic Devices for the Future In-memory Computing","authors":"Chun Zhao, T. Zhao, Zongjie Shen, Yixin Cao, Yina Liu, Li Yang, I. Mitrovic, E. G. Lim, Cezhou Zhao","doi":"10.1109/ASICON52560.2021.9620329","DOIUrl":"https://doi.org/10.1109/ASICON52560.2021.9620329","url":null,"abstract":"Nowadays, the synaptic devices for the in-memory computing have been widely investigated due to the high-efficiency computing potential and the ability to mimic biological neurobehavior. In this work, the two-terminal and three-terminal synaptic devices based on the MXenes, a kind of two-dimensional materials, have been proposed. The typical synaptic behaviors including long-term potentiation and depression (LTP/D) have also been studied. Moreover, through combining the LTP/D property with the simulator based in artificial neural network (ANN), a task of handwritten digital image recognition has been successfully operated. Finally, based on the synaptic effect under light stimulation, an application for storing and processing sequence information of different light wavelengths has also been proposed and reported.","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"58 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116520900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InAlN/GaN HEMTs on Si with 0.18-Ω•mm Contact Resistance and 2.1-A/mm Drain Current Density 具有0.18-Ω•mm接触电阻和2.1 a /mm漏极电流密度的硅基InAlN/GaN HEMTs
2021 IEEE 14th International Conference on ASIC (ASICON) Pub Date : 2021-10-26 DOI: 10.1109/ASICON52560.2021.9620249
Yang Jiang, Fangzhou Du, Zepeng Qiao, W. Cheng, Jiaqi He, Xinyi Tang, Feifei Liu, Lei Wen, Qing Wang, Hongyu Yu
{"title":"InAlN/GaN HEMTs on Si with 0.18-Ω•mm Contact Resistance and 2.1-A/mm Drain Current Density","authors":"Yang Jiang, Fangzhou Du, Zepeng Qiao, W. Cheng, Jiaqi He, Xinyi Tang, Feifei Liu, Lei Wen, Qing Wang, Hongyu Yu","doi":"10.1109/ASICON52560.2021.9620249","DOIUrl":"https://doi.org/10.1109/ASICON52560.2021.9620249","url":null,"abstract":"In this paper, we proposed a Ti5Al1/TiN gold-free ohmic contact on InAlN/GaN high electron mobility transistors (HEMTs). The fabricated devices exhibited a very low contact resistance of 0.183 Ω•mm and achieved very good on-state performance with a high maximum drain current (Id, max) of 2.10 A/mm, on-resistance (RON) of 1.75 Ω•mm and the maximum transconductance (gm, max) of 339 mS/mm with source-to-drain distance of 4 um. These results revealed this new type of alloy ohmic contact could improve the InAlN/GaN HEMTs performance by reducing the contact resistance, which shows great potential for high-performance and low-cost radio frequency (RF) application.","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133734886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Review of PPG/NIRS Acquisition ASIC and System PPG/NIRS采集专用集成电路及系统综述
2021 IEEE 14th International Conference on ASIC (ASICON) Pub Date : 2021-10-26 DOI: 10.1109/ASICON52560.2021.9620430
Zhen Lu, Ting Yi, Zhiliang Hong
{"title":"A Review of PPG/NIRS Acquisition ASIC and System","authors":"Zhen Lu, Ting Yi, Zhiliang Hong","doi":"10.1109/ASICON52560.2021.9620430","DOIUrl":"https://doi.org/10.1109/ASICON52560.2021.9620430","url":null,"abstract":"Photoplethysmography (PPG) and near-infrared spectroscopy (NIRS) are non-invasive, optical-sensor based bio-signal recording techniques that can be integrated in many low power and wearable devices, such as smart watches, headsets and finger clips, for long term health monitoring. The PPG signal contains important health information, such as heart rate (HR), heart rate variability (HRV), and blood oxygen saturation (SpO2). A typical PPG system is composed of three building blocks: a light emitter/receiver, an optical readout, and a baseline current compensation circuit. The key challenge is to reduce the system power consumption while improving the dynamic range of the readout by compensating the ambient light current and DC current. This paper reviews the techniques and future trend of the state-of-the-art PPG acquisition ASICs and systems in a systematic manner.","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133109004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Reliable Multi-information Entropy Glitch PUF Using Schmitt Trigger Sampling Method for IoT Security 基于Schmitt触发采样方法的可靠多信息熵故障PUF
2021 IEEE 14th International Conference on ASIC (ASICON) Pub Date : 2021-10-26 DOI: 10.1109/ASICON52560.2021.9620406
Li Ni, Pengjun Wang, Yuejun Zhang, Jia Chen, Liwei Li, Huihong Zhang
{"title":"A Reliable Multi-information Entropy Glitch PUF Using Schmitt Trigger Sampling Method for IoT Security","authors":"Li Ni, Pengjun Wang, Yuejun Zhang, Jia Chen, Liwei Li, Huihong Zhang","doi":"10.1109/ASICON52560.2021.9620406","DOIUrl":"https://doi.org/10.1109/ASICON52560.2021.9620406","url":null,"abstract":"Glitch PUF (Physical Unclonable Function) has non-linear characteristics to resist the threat of modeling attacks. However, there are some problems in Glitch PUF such as low information entropy and susceptibility to noise factors. In this paper, a Glitch PUF is proposed which uses multilevel parallel architecture to generate multi-bit stable information entropy. Firstly, the delay time of different paths are controlled by the adjustment module circuit, which changes the glitch width and obtain stable glitch waveforms. A noise reduction circuit is designed to filter the noise by using the hysteresis effect and feedback mechanism of the Schmitt trigger. And then, a pulse width detection circuit is proposed to extract the Glitch PUF output data. Finally, the 128 bits Glitch PUF circuit is implemented in TSMC 65 nm CMOS technology. The experimental results show that the randomness is 99.9% and the uniqueness is 50.03%, which means the proposed design can be widely used for IoT security.","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134097492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Machine Learning in Nanometer AMS Design-for-Reliability : (Invited Paper) 机器学习在纳米AMS可靠性设计中的应用:(特邀论文)
2021 IEEE 14th International Conference on ASIC (ASICON) Pub Date : 2021-10-26 DOI: 10.1109/ASICON52560.2021.9620496
Tinghuan Chen, Qi Sun, Bei Yu
{"title":"Machine Learning in Nanometer AMS Design-for-Reliability : (Invited Paper)","authors":"Tinghuan Chen, Qi Sun, Bei Yu","doi":"10.1109/ASICON52560.2021.9620496","DOIUrl":"https://doi.org/10.1109/ASICON52560.2021.9620496","url":null,"abstract":"With continued scaling, the susceptibility of nanometer CMOS to reliability issues has increased significantly in analog/mixed-signal (AMS) circuits. The industrial large-scale AMS circuits bring grand challenges in the efficiency of reliability design and verification. Machine learning (ML) provides one promising direction to achieve significant speedup in design closure. In this paper, we introduce typical reliability issues and review some excellent arts in applying ML approaches to AMS circuits reliability verification and design-for-reliability (DFR). We also discuss some open challenges in the industry and provide potential ML-based solutions. We hope this paper can promote the development of AMS circuits DFR.","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117113734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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