The study of parameters variation of nMOSFET affected by the HCI

Hot Carrier injection (HCI) degradation is a critical issue for deep sup micro and nm technology. An Accelerated lifetime experiment is proposed in this paper to study the parameters degradation of nMOSFET induced by the HCI. A Device is considered to fail when a chosen device parameter changes by more than the specified failure criterion at worst use condition (typically VDDMAX= 1.1VDD) at a specified end of life. The results shows that the MTTF of HCI is depend on the parameter choose from. If the failure criteria is |ΔIds,sat/Ids,sat|=10%, then the MTTF has the maximum value. The model parameter m of Substrate/drain current ratio has been compared by using three stress conditions with single stress condition, it shows that the model parameter N obtained by single stress condition has low value.