Machine Learning in Nanometer AMS Design-for-Reliability : (Invited Paper)

Tinghuan Chen, Qi Sun, Bei Yu
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引用次数: 5

Abstract

With continued scaling, the susceptibility of nanometer CMOS to reliability issues has increased significantly in analog/mixed-signal (AMS) circuits. The industrial large-scale AMS circuits bring grand challenges in the efficiency of reliability design and verification. Machine learning (ML) provides one promising direction to achieve significant speedup in design closure. In this paper, we introduce typical reliability issues and review some excellent arts in applying ML approaches to AMS circuits reliability verification and design-for-reliability (DFR). We also discuss some open challenges in the industry and provide potential ML-based solutions. We hope this paper can promote the development of AMS circuits DFR.
机器学习在纳米AMS可靠性设计中的应用:(特邀论文)
随着规模的不断扩大,纳米CMOS对可靠性问题的敏感性在模拟/混合信号(AMS)电路中显著增加。工业大规模集成电路对可靠性设计和验证的效率提出了巨大的挑战。机器学习(ML)为实现设计闭合的显着加速提供了一个有希望的方向。在本文中,我们介绍了典型的可靠性问题,并回顾了将机器学习方法应用于AMS电路可靠性验证和可靠性设计(DFR)的一些优秀技术。我们还讨论了行业中的一些开放挑战,并提供了潜在的基于ml的解决方案。希望本文能促进AMS电路DFR的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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