发布求助
文献互助 智能选刊 最新文献

2019 14th European Microwave Integrated Circuits Conference (EuMIC)最新文献

筛选
英文 中文
A GaN-HEMT with Floating LF Ground for Reverse Operation in Integrated RF Power Circuits 集成射频功率电路中用于反向操作的浮动低频地GaN-HEMT
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909470
O. Bengtsson, Sophie Paul, W. Heinrich
{"title":"A GaN-HEMT with Floating LF Ground for Reverse Operation in Integrated RF Power Circuits","authors":"O. Bengtsson, Sophie Paul, W. Heinrich","doi":"10.23919/EuMIC.2019.8909470","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909470","url":null,"abstract":"An integrated GaN-HEMT with floating low-frequency (LF) ground is presented. The floating LF ground enables reverse operation in RF applications making operation at offset DC and LF voltages possible. The RF is capacitive coupled to ground using MIM capacitors. On-chip RF isolation is established through a short-circuited RF $lambda$/4-line. The transistor shows good agreement between measured and simulated small-signal behavior. Compared to standard two-port devices, the stability of the three-port device is more challenging, particularly in the LF to RF transition region but also in the RF band. The large-signal behavior is verified using load-pull measurements and shows 0.7 dB power degradation compared to the non-floating device but drain efficiency is almost unaffected. At 10 GHz the 1 mm gatewidth device shows a saturated output power of 35.4 dBm (3.5 W) and a maximum drain efficiency of 50 % is achieved. Floating operation at 20 V VDS shows identical small-signal results with the LF ground potential at 8 V as for grounded operation with the LF ground potential at 0 V.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123743461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
EuMIC 2019 Abstract Cards euic 2019抽象卡片
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/eumic.2019.8909442
{"title":"EuMIC 2019 Abstract Cards","authors":"","doi":"10.23919/eumic.2019.8909442","DOIUrl":"https://doi.org/10.23919/eumic.2019.8909442","url":null,"abstract":"","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121167131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2-12 GHz High-Power GaN MMIC Switch Utilizing Stacked-FET Circuits 利用堆叠fet电路的2- 12ghz大功率GaN MMIC开关
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909421
M. Hangai, Ryota Komaru, S. Miwa, Y. Kamo, S. Shinjo
{"title":"2-12 GHz High-Power GaN MMIC Switch Utilizing Stacked-FET Circuits","authors":"M. Hangai, Ryota Komaru, S. Miwa, Y. Kamo, S. Shinjo","doi":"10.23919/EuMIC.2019.8909421","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909421","url":null,"abstract":"Broadband high-power GaN MMIC switch has been successfully developed. The switch is based on stacked-FET circuits. By employing the configuration, high-power and low-loss performances can be achieved in broadband frequency range. The design equations to minimize insertion loss while maintaining high-power handling capability have been analytically derived. To verify this methodology, an MMIC switch was fabricated at 2-12 GHz. The switch demonstrates the power handling capability of 10W and the insertion loss of 1.5dB.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124786717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Thermal Performances of Industrial 0.25-μm GaN Technology for Space Applications 用于空间应用的工业0.25 μm GaN技术的热性能
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909408
S. Driad, C. Teyssandier, C. Chang, L. Brunel, A. Couturier, V. Brunel, D. Floriot, H. Stieglauer, H. Blanck
{"title":"Thermal Performances of Industrial 0.25-μm GaN Technology for Space Applications","authors":"S. Driad, C. Teyssandier, C. Chang, L. Brunel, A. Couturier, V. Brunel, D. Floriot, H. Stieglauer, H. Blanck","doi":"10.23919/EuMIC.2019.8909408","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909408","url":null,"abstract":"This work is focused on both experimental and modelling analysis of the temperature effect on $0.25- mu mathrm{m}$ AlGaN/GaN HEMT performances. The temperature-dependence is analyzed by means of DC and Load-Pull measurement in the temperature range from $- 45^{circ}mathrm{C}$ to +$85^{circ}mathrm{C}$. The impact of the second harmonic matching on the PAE is also investigated in the paper. Thermal modelling validation is carried out showing a good accuracy of the model to predict the device thermal behaviour. A 20W X-BAND MMIC is designed at UMS. Comparison of the measurement and the simulation at the circuit level demonstrates the UMS GH25-10 capabilities for space applications.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"14 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126103171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A miniatured 28-GHz FEM using a 0.15-μm InGaAs/GaAs E-mode pHEMT process 采用0.15 μm InGaAs/GaAs E-mode pHEMT工艺的微型28 ghz FEM
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909537
Hui-Dong Lee, Sunwoo Kong, Seunghyun Jang, Kwang-Seon Kim, Kwangchun Lee, Bonghyuk Park
{"title":"A miniatured 28-GHz FEM using a 0.15-μm InGaAs/GaAs E-mode pHEMT process","authors":"Hui-Dong Lee, Sunwoo Kong, Seunghyun Jang, Kwang-Seon Kim, Kwangchun Lee, Bonghyuk Park","doi":"10.23919/EuMIC.2019.8909537","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909537","url":null,"abstract":"This paper presents a miniaturized 28-GHz FEM implemented in 0.15-μm InGaAs/GaAs E-mode pHEMT process. It is designed for use with 28-GHz switching beamforming systems. In order to miniaturize the system, the RF FEM is mounted on the printed circuit board in the form of individual PA, switch, and LNA chips, and development has been made to facilitate the mounting of mobile terminals. The results of the FEM transmitter verification including the implemented filter on the PCB have a gain of 17.9 dB, an output P1 dB of 24.2 dBm and an EVM of -30 dB at 20 dBm output. As a result of the receiver verification, the gain is around 20 dB, the input P1 dB is -30 dBm, and the EVM performance of -30 dB is tested at -10 dBm output.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127191779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Screening of Integrated GaAs Stacked-FET Power Amplifiers 集成GaAs堆叠fet功率放大器的筛选
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909671
G. V. D. Bent, A. P. de Hek, F. V. van Vliet
{"title":"Screening of Integrated GaAs Stacked-FET Power Amplifiers","authors":"G. V. D. Bent, A. P. de Hek, F. V. van Vliet","doi":"10.23919/EuMIC.2019.8909671","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909671","url":null,"abstract":"The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or financial limitations. A good alternative is the screening of several DC parameters that are relevant for a reliable operation. Commonly used parameters for this DC-screening are the pinch-off voltage and off-state breakdown voltage of the transistors. To measure these parameters on all transistors, access is required to the gate, drain and source terminals of these transistors. In a Stacked-FET amplifier not all transistors terminals are directly accessible via DC pads and the inclusion of extra pads will result in a significantly larger layout. The goal therefore is to measure the DC behaviour without the need for extra DC pads. In this article methods are developed to support this goal.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125441656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
20-44 GHz Mismatch Tolerant Programmable Dynamic Range with Inherent CMRR Square Law Detector for AGC Applications 20-44 GHz容错可编程动态范围，内置CMRR平方律检测器，用于AGC应用
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909568
A. Amer, A. Y. Mohamed Abdalla, I. Eshrah
{"title":"20-44 GHz Mismatch Tolerant Programmable Dynamic Range with Inherent CMRR Square Law Detector for AGC Applications","authors":"A. Amer, A. Y. Mohamed Abdalla, I. Eshrah","doi":"10.23919/EuMIC.2019.8909568","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909568","url":null,"abstract":"This paper describes the design and measurement of a programmable dynamic range square-law power detector (PD) for a wideband mm-Wave transceiver operating at (20-44 GHz) frequency range. The PD is designed and fabricated in TSMC 0.18um BiCMOS technology. Theoretical analysis and CAD harmonic balance simulation were performed to show the detector performance. This detector is designed for AutomaticGain-control (AGC) for optimizing transceivers performance by setting the received and transmitted power to the required sweet operating spot range. The proposed square-law detector uses programmable resistance to switch between the available detection range, current subtraction technique to increase the available output voltage range, resistor degeneration to reduce the mismatches, and finally input cross capacitors to absorb the conversion gain reduction due to the degeneration and to provide high common mode rejection (CMR). In the matched frequency range, the measured input dynamic range has increased by 7 dB switchable range. The detector response is varying by around ±1 dBV for a given input RF power, as the RF frequency is swept across the operating frequency range. Static power consumption is 5.2mW from a 3.3 V supply.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117284255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Limiting the Output Power of Rugged GaN LNAs 限制坚固GaN LNAs的输出功率
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909653
E. Kaule, Cristina Andrei, S. Gerlich, R. Doerner, M. Rudolph
{"title":"Limiting the Output Power of Rugged GaN LNAs","authors":"E. Kaule, Cristina Andrei, S. Gerlich, R. Doerner, M. Rudolph","doi":"10.23919/EuMIC.2019.8909653","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909653","url":null,"abstract":"Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121829663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Systematic Experimental fT and fmax Comparison of 40-nm Bulk CMOS versus 45-nm SOI Technology 40纳米体CMOS与45纳米SOI技术的系统实验fT和fmax比较
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909582
J. Rimmelspacher, A. Werthof, R. Weigel, V. Issakov
{"title":"Systematic Experimental fT and fmax Comparison of 40-nm Bulk CMOS versus 45-nm SOI Technology","authors":"J. Rimmelspacher, A. Werthof, R. Weigel, V. Issakov","doi":"10.23919/EuMIC.2019.8909582","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909582","url":null,"abstract":"The unity current gain frequency (fT) and the maximum oscillation frequency (fmax) are key parameters used to characterize the highest achievable speed of a semiconductor technology. However, there is typically a high uncertainty level concerning evaluation of these values, related to several factors. First, these metrics are obtained from small-signal transistor measurements at low gigahertz frequencies and extrapolated far to a range of several hundreds of gigahertz. Hence, a large deviation of obtained values is possible, depending on the point at which the extrapolation is taken. Second, depending on metallization layer down to which the transistor interconnect parasitics are de-embedded, the value of fmax may vary significantly. Therefore, it is a challenge to compare technologies in a fair and consistent way by means of reported fT and fmaxvalues, since these values could have been obtained for strongly differencing conditions. This paper presents a systematic comparison of fT and fmax values for two technologies: 40 nm bulk CMOS and 45 nm RF silicon-on-insulator (RF-SOI) CMOS. The values are obtained experimentally from S-parameter measurements under rigorously similar conditions for both technologies. We use the same extrapolation frequencies and de-embed the results down to the same metal level using the same de-embedding technique and similar structures. Finally, we discuss the results and provide additional insights.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127447818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A High Gain Ka-Band Asymmetrical GaAs Doherty Power Amplifier MMIC for 5G Applications 一种用于5G应用的高增益ka波段非对称GaAs多尔蒂功率放大器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909611
Ahmet Değirmenci, Ahmet Aktuğ
{"title":"A High Gain Ka-Band Asymmetrical GaAs Doherty Power Amplifier MMIC for 5G Applications","authors":"Ahmet Değirmenci, Ahmet Aktuğ","doi":"10.23919/EuMIC.2019.8909611","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909611","url":null,"abstract":"In this paper, a 3-stage, Ka-Band, asymmetrical Doherty Power Amplifier (DPA) MMIC using 0.15-$mu$ m depletion mode (D-mode) Gallium Arsenide (GaAs) pHEMT is presented. In order to increase operation bandwidth, the quarter-wavelength ($lambda$/4) transmission line behind main amplifier is eliminated and the output matching network is optimized for both back-off and peak efficiency. A 20-ohm Wilkinson power divider is used behind 1$^{st}$ stage so that the input impedance of the power divider can be easily transformed to the load impedance that the device at 1$^{st}$ stage must see. The fabricated DPA exhibits a measured output power of 27-27.5 dBm with a peak power added-efficiency (PAE) of 37%-39% in the frequency band of 27.25-29.75 GHz. The PAE at 6 dB and 7dB output power back-off are obtained as 25%-29% and 22%-28% respectively. Additionally, the large signal gain larger than 18 dB is obtained in the band of operation.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116675763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信