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2019 14th European Microwave Integrated Circuits Conference (EuMIC)最新文献

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High Data Rate W-Band Balanced Schottky Diode Envelope Detector for Broadband Communications 用于宽带通信的高数据速率w波段平衡肖特基二极管包络检测器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909428
Angel Blanco Granja, I. Monroy, A. Penirschke, D. Konstantinou, S. Rommel, B. Cimoli, Sebastián Rodríguez, R. Reese, U. Johannsen, R. Jakoby, T. Johansen
{"title":"High Data Rate W-Band Balanced Schottky Diode Envelope Detector for Broadband Communications","authors":"Angel Blanco Granja, I. Monroy, A. Penirschke, D. Konstantinou, S. Rommel, B. Cimoli, Sebastián Rodríguez, R. Reese, U. Johannsen, R. Jakoby, T. Johansen","doi":"10.23919/EuMIC.2019.8909428","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909428","url":null,"abstract":"This article reports on a W-Band (75-110 GHz) Schottky diode based balanced envelope detector in microstrip technology, featuring a transition from WR-10 to microstrip. The manufactured detector provides 20 GHz of input RF bandwidth within the W-band. A video bandwidth between 4GHz and 6GHz is achieved for input RF frequencies between 75 GHz and 88 GHz, allowing error free transmission of signals up to 12 Gbit/s.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"7 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124279495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Broadband Linearization Technique for mmWave Circuits 毫米波电路的宽带线性化技术
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909530
Alok Sethi, Jere Rusanen, J. Aikio, A. Pärssinen, T. Rahkonen
{"title":"Broadband Linearization Technique for mmWave Circuits","authors":"Alok Sethi, Jere Rusanen, J. Aikio, A. Pärssinen, T. Rahkonen","doi":"10.23919/EuMIC.2019.8909530","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909530","url":null,"abstract":"This paper presents a broadband linearization technique that can be used for mmWave amplifier circuits. It is based on the well-known principle of derivative superposition, where FETs with different operating points are connected in parallel to generate mutually cancelling third order intermodulation distortion (IM3) products. It is demonstrated by measurements in excess of 10 dB improvement in IM3 obtained from 1 GHz to 30 GHz, practically free by connecting a NMOS with very low gate bias in parallel of an amplifying NMOS. The reasons and limits of the cancellation are discussed. The inherent broadbandness of the technique makes it extremely suitable to be used in CMOS mmWave circuits.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126268568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 18-40GHz 10W GaN Power Amplifier MMIC Utilizing Combination of the Distributed and Reactive Matching Topology 基于分布式无功匹配拓扑的18-40GHz 10W GaN功率放大器MMIC
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909556
Chenghao Han, H. Tao
{"title":"A 18-40GHz 10W GaN Power Amplifier MMIC Utilizing Combination of the Distributed and Reactive Matching Topology","authors":"Chenghao Han, H. Tao","doi":"10.23919/EuMIC.2019.8909556","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909556","url":null,"abstract":"This paper describes the design and measured performance of a 18-40GHz 10W power amplifier (PA) MMIC utilizing combination of the distributed and reactive matching topology fabricated with an advanced 0.15μm Gallium Nitride (GaN) HEMT technology process. At the output stage of the power amplifier, reactive matching is used for better output power and power added efficient (PAE) design. To increase the gain and optimize the input return loss, distributed amplifier has been adopted at the input stage. The power amplifier MMIC demonstrates 10-18 W output power, over 12dB power gain and PAE of 15-27% over 18-40 GHz band under 20V drain bias. The chip is compact with the size of 3.2×2.8 mm2 and it delivers an average output power density 1.52 W/mm2 over the chip area. To the best of our knowledge, the pout, PAE and power density are highest among the published work for K/Ka-band PA MMICs.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126323625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A Broadband Antenna-Coupled Terahertz Direct Detector in a 0.13-μm SiGe HBT Technology 基于0.13 μm SiGe HBT技术的宽带天线耦合太赫兹直接探测器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909399
M. Andree, J. Grzyb, R. Jain, B. Heinemann, U. Pfeiffer
{"title":"A Broadband Antenna-Coupled Terahertz Direct Detector in a 0.13-μm SiGe HBT Technology","authors":"M. Andree, J. Grzyb, R. Jain, B. Heinemann, U. Pfeiffer","doi":"10.23919/EuMIC.2019.8909399","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909399","url":null,"abstract":"This paper presents an integrated silicon-lens coupled THz direct detector. It comprises a pair of differentially driven antenna-coupled HBT transistors in common-base configuration implemented in an advanced $0.13-mu m$ SiGe HBT technology with $f_{T}/f_{max}$ of 350/550 GHz. Based on the antenna detector co-design approach, a broadband operation with an optical noise equivalent power (NEP) lower than 40 $pW/sqrt{Hz}$ in the measured 220 GHz to 1 THz band is achieved. The detector operates in a voltage mode readout with an external resistance of 1.83 $kOmega$. Two device regions have been investigated. In the forward-active mode the detector achieves its minimum NEP of 1.9 $pW/sqrt{Hz}$ at 292 GHz and values less than 4.3 $pW/sqrt{Hz}$ from 275 to 525 GHz at 100 kHz chopping frequency. The maximum voltage responsivities $(R_{v})$ are 9 $kV/W$ and around 7.5 $kV/W$ respectively. In the saturation region the minimum measured NEP from 220 GHz to 1 THz is 5.1 $pW/sqrt{Hz}$.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132697772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
EuMIC 2019 Book of Abstracts EuMIC 2019摘要书
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/eumic.2019.8909577
{"title":"EuMIC 2019 Book of Abstracts","authors":"","doi":"10.23919/eumic.2019.8909577","DOIUrl":"https://doi.org/10.23919/eumic.2019.8909577","url":null,"abstract":"","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131127508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Inductorless 60GHz Down-Conversion Mixer in 22nm FD-SOI CMOS Technology 采用22nm FD-SOI CMOS技术的无电感60GHz下变频混频器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909566
P. V. Testa, V. Riess, C. Carta, F. Ellinger
{"title":"An Inductorless 60GHz Down-Conversion Mixer in 22nm FD-SOI CMOS Technology","authors":"P. V. Testa, V. Riess, C. Carta, F. Ellinger","doi":"10.23919/EuMIC.2019.8909566","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909566","url":null,"abstract":"This paper presents an inductorless 60GHz down-conversion mixer integrated in a 22nm FD-SOI CMOS technology. The mixer is based on a single-balanced architecture followed by a common-source output buffer, and it performs a zero-IF conversion with –3dB corner frequency at 1GHz. The maximum differential single-side-band (SSB) conversion gain is 6dB, in agreement with simulation and circuit analysis. The required LO power is –4dBm, while the dissipated power is 18mW. The silicon footprint is 0.05mm2, which to the knowledge of the authors is the smallest reported so far for down-conversion mixers operating at 60GHz, with a factor 3 of improvement.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"554 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133350015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effective Resistivity Extraction of Low-Loss Silicon Substrate at Millimeter-Wave Frequencies 毫米波下低损耗硅衬底的有效电阻率提取
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909575
L. Nyssens, M. Rack, J. Raskin
{"title":"Effective Resistivity Extraction of Low-Loss Silicon Substrate at Millimeter-Wave Frequencies","authors":"L. Nyssens, M. Rack, J. Raskin","doi":"10.23919/EuMIC.2019.8909575","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909575","url":null,"abstract":"The effective resistivity $(rho_{eff})$ is a Figure of merit commonly used to compare the RF performance of a substrate from the measurements of CPW lines. For highly resistive substrates, such as the trap-rich substrate, the extracted $rho_{eff}$ decreases by several orders of magnitude at millimeter-wave frequencies. The explanation for this decay is twofold. First, the original expression of $rho_{eff}$ does not include dielectric losses. Second, the imaginary part of the characteristic impedance $(mathfrak{J}(Z_{c}))$ is not well extracted, which leads to an incorrect separation of the total losses among the metal and substrate losses. This paper solves both issues by presenting a new procedure to extract $rho_{eff}$ and the dielectric losses simultaneously and by introducing a novel method to correct $mathfrak{J}(Z_{c})$. Finally, it is shown that this extraction method enables the correct extraction of substrate parameters up to 220 GHz.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122956149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
[EuMIC 2019 The End of Indexes Page] [EuMIC 2019索引结束页]
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/eumic.2019.8909521
{"title":"[EuMIC 2019 The End of Indexes Page]","authors":"","doi":"10.23919/eumic.2019.8909521","DOIUrl":"https://doi.org/10.23919/eumic.2019.8909521","url":null,"abstract":"","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123034960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Reliability Active Integrated Power Limiter with Sharp Compression Profile in Ka-Band in 130 nm SiGe Technology 高可靠性有源集成功率限幅器，在130纳米SiGe技术中具有ka波段的锐利压缩轮廓
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909462
Manuel Potércau, N. Deltimple, A. Ghiotto, O. Jardel, S. Rochette, H. Leblond, J. Villemazet
{"title":"High-Reliability Active Integrated Power Limiter with Sharp Compression Profile in Ka-Band in 130 nm SiGe Technology","authors":"Manuel Potércau, N. Deltimple, A. Ghiotto, O. Jardel, S. Rochette, H. Leblond, J. Villemazet","doi":"10.23919/EuMIC.2019.8909462","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909462","url":null,"abstract":"A power limiter with high input power handling (24 dB over the input compression point) and sharp compression profile (less than 1.5 dB between the output 1-dB compression point and the output saturated power) in Ka-band (17.3 GHz; 20.2 GHz) is presented in this paper. Moreover, the circuit shows a low phase distortion (<3°) which make it suitable for use in an analog pre-processing linearizing system. This performances are obtained thanks to a novel architecture based on a power amplifier topology. This work presents the architecture along with the design methodology. Reliability is studied at high input power condition using the safe operation area from the technology provider. Then, a prototype is designed on 130 nm BiCMOS technology from STMicroelectronics, measured and compared to the simulation and the state of art.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123809760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology 采用130纳米SiGe BiCMOS技术的18dbm g波段功率放大器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909410
Abdul Ali, P. Colantonio, F. Giannini, D. Kissinger, H. Ng, J. Yun
{"title":"A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology","authors":"Abdul Ali, P. Colantonio, F. Giannini, D. Kissinger, H. Ng, J. Yun","doi":"10.23919/EuMIC.2019.8909410","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909410","url":null,"abstract":"This paper presents a four-way combined G-band power amplifier (PA) using a 130-nm SiGe BiCMOS technology. A 185-GHz three-stage single-ended PA based on cascode topology with two driver stages and a power stage is designed. To combine output power of four single-ended PAs, a low-loss four-way reactive power combiner is designed. The developed PA shows a saturated output power of 18.1 dBm with peak gain of 25.9 dB and PAE of 3.5 % at 185 GHz. In addition, the PA provides a 3 dB and 6 dB bandwidth of 27 GHz and 42 GHz, respectively. To the best of our knowledge, the measured power reported in this paper is the highest for SiGe BiCMOS PAs in G-band.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"52 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124307457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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