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2019 14th European Microwave Integrated Circuits Conference (EuMIC)最新文献

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Systematic Experimental fT and fmax Comparison of 40-nm Bulk CMOS versus 45-nm SOI Technology 40纳米体CMOS与45纳米SOI技术的系统实验fT和fmax比较
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909582
J. Rimmelspacher, A. Werthof, R. Weigel, V. Issakov
{"title":"Systematic Experimental fT and fmax Comparison of 40-nm Bulk CMOS versus 45-nm SOI Technology","authors":"J. Rimmelspacher, A. Werthof, R. Weigel, V. Issakov","doi":"10.23919/EuMIC.2019.8909582","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909582","url":null,"abstract":"The unity current gain frequency (fT) and the maximum oscillation frequency (fmax) are key parameters used to characterize the highest achievable speed of a semiconductor technology. However, there is typically a high uncertainty level concerning evaluation of these values, related to several factors. First, these metrics are obtained from small-signal transistor measurements at low gigahertz frequencies and extrapolated far to a range of several hundreds of gigahertz. Hence, a large deviation of obtained values is possible, depending on the point at which the extrapolation is taken. Second, depending on metallization layer down to which the transistor interconnect parasitics are de-embedded, the value of fmax may vary significantly. Therefore, it is a challenge to compare technologies in a fair and consistent way by means of reported fT and fmaxvalues, since these values could have been obtained for strongly differencing conditions. This paper presents a systematic comparison of fT and fmax values for two technologies: 40 nm bulk CMOS and 45 nm RF silicon-on-insulator (RF-SOI) CMOS. The values are obtained experimentally from S-parameter measurements under rigorously similar conditions for both technologies. We use the same extrapolation frequencies and de-embed the results down to the same metal level using the same de-embedding technique and similar structures. Finally, we discuss the results and provide additional insights.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127447818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Broadband Linearization Technique for mmWave Circuits 毫米波电路的宽带线性化技术
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909530
Alok Sethi, Jere Rusanen, J. Aikio, A. Pärssinen, T. Rahkonen
{"title":"Broadband Linearization Technique for mmWave Circuits","authors":"Alok Sethi, Jere Rusanen, J. Aikio, A. Pärssinen, T. Rahkonen","doi":"10.23919/EuMIC.2019.8909530","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909530","url":null,"abstract":"This paper presents a broadband linearization technique that can be used for mmWave amplifier circuits. It is based on the well-known principle of derivative superposition, where FETs with different operating points are connected in parallel to generate mutually cancelling third order intermodulation distortion (IM3) products. It is demonstrated by measurements in excess of 10 dB improvement in IM3 obtained from 1 GHz to 30 GHz, practically free by connecting a NMOS with very low gate bias in parallel of an amplifying NMOS. The reasons and limits of the cancellation are discussed. The inherent broadbandness of the technique makes it extremely suitable to be used in CMOS mmWave circuits.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126268568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High Data Rate W-Band Balanced Schottky Diode Envelope Detector for Broadband Communications 用于宽带通信的高数据速率w波段平衡肖特基二极管包络检测器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909428
Angel Blanco Granja, I. Monroy, A. Penirschke, D. Konstantinou, S. Rommel, B. Cimoli, Sebastián Rodríguez, R. Reese, U. Johannsen, R. Jakoby, T. Johansen
{"title":"High Data Rate W-Band Balanced Schottky Diode Envelope Detector for Broadband Communications","authors":"Angel Blanco Granja, I. Monroy, A. Penirschke, D. Konstantinou, S. Rommel, B. Cimoli, Sebastián Rodríguez, R. Reese, U. Johannsen, R. Jakoby, T. Johansen","doi":"10.23919/EuMIC.2019.8909428","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909428","url":null,"abstract":"This article reports on a W-Band (75-110 GHz) Schottky diode based balanced envelope detector in microstrip technology, featuring a transition from WR-10 to microstrip. The manufactured detector provides 20 GHz of input RF bandwidth within the W-band. A video bandwidth between 4GHz and 6GHz is achieved for input RF frequencies between 75 GHz and 88 GHz, allowing error free transmission of signals up to 12 Gbit/s.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"7 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124279495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
EuMIC 2019 Book of Abstracts EuMIC 2019摘要书
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/eumic.2019.8909577
{"title":"EuMIC 2019 Book of Abstracts","authors":"","doi":"10.23919/eumic.2019.8909577","DOIUrl":"https://doi.org/10.23919/eumic.2019.8909577","url":null,"abstract":"","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131127508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Broadband Antenna-Coupled Terahertz Direct Detector in a 0.13-μm SiGe HBT Technology 基于0.13 μm SiGe HBT技术的宽带天线耦合太赫兹直接探测器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909399
M. Andree, J. Grzyb, R. Jain, B. Heinemann, U. Pfeiffer
{"title":"A Broadband Antenna-Coupled Terahertz Direct Detector in a 0.13-μm SiGe HBT Technology","authors":"M. Andree, J. Grzyb, R. Jain, B. Heinemann, U. Pfeiffer","doi":"10.23919/EuMIC.2019.8909399","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909399","url":null,"abstract":"This paper presents an integrated silicon-lens coupled THz direct detector. It comprises a pair of differentially driven antenna-coupled HBT transistors in common-base configuration implemented in an advanced $0.13-mu m$ SiGe HBT technology with $f_{T}/f_{max}$ of 350/550 GHz. Based on the antenna detector co-design approach, a broadband operation with an optical noise equivalent power (NEP) lower than 40 $pW/sqrt{Hz}$ in the measured 220 GHz to 1 THz band is achieved. The detector operates in a voltage mode readout with an external resistance of 1.83 $kOmega$. Two device regions have been investigated. In the forward-active mode the detector achieves its minimum NEP of 1.9 $pW/sqrt{Hz}$ at 292 GHz and values less than 4.3 $pW/sqrt{Hz}$ from 275 to 525 GHz at 100 kHz chopping frequency. The maximum voltage responsivities $(R_{v})$ are 9 $kV/W$ and around 7.5 $kV/W$ respectively. In the saturation region the minimum measured NEP from 220 GHz to 1 THz is 5.1 $pW/sqrt{Hz}$.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132697772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
An Inductorless 60GHz Down-Conversion Mixer in 22nm FD-SOI CMOS Technology 采用22nm FD-SOI CMOS技术的无电感60GHz下变频混频器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909566
P. V. Testa, V. Riess, C. Carta, F. Ellinger
{"title":"An Inductorless 60GHz Down-Conversion Mixer in 22nm FD-SOI CMOS Technology","authors":"P. V. Testa, V. Riess, C. Carta, F. Ellinger","doi":"10.23919/EuMIC.2019.8909566","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909566","url":null,"abstract":"This paper presents an inductorless 60GHz down-conversion mixer integrated in a 22nm FD-SOI CMOS technology. The mixer is based on a single-balanced architecture followed by a common-source output buffer, and it performs a zero-IF conversion with –3dB corner frequency at 1GHz. The maximum differential single-side-band (SSB) conversion gain is 6dB, in agreement with simulation and circuit analysis. The required LO power is –4dBm, while the dissipated power is 18mW. The silicon footprint is 0.05mm2, which to the knowledge of the authors is the smallest reported so far for down-conversion mixers operating at 60GHz, with a factor 3 of improvement.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"554 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133350015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 电路模拟器中GaN场效应管负载-拉力数据的比较研究
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909451
G. Avolio, A. Raffo, M. Marchetti, G. Bosi, V. Vadalà, G. Vannini
{"title":"GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study","authors":"G. Avolio, A. Raffo, M. Marchetti, G. Bosi, V. Vadalà, G. Vannini","doi":"10.23919/EuMIC.2019.8909451","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909451","url":null,"abstract":"We compared two approaches to use high-frequency transistor load-pull data directly into a circuit simulator. One approach is based on Artificial Neural Networks (ANN), the other on look-up tables (LUT). We discuss some practical aspects, including implementation in the CAD environment and extrapolation capability.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124428555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology 采用130纳米SiGe BiCMOS技术的18dbm g波段功率放大器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909410
Abdul Ali, P. Colantonio, F. Giannini, D. Kissinger, H. Ng, J. Yun
{"title":"A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology","authors":"Abdul Ali, P. Colantonio, F. Giannini, D. Kissinger, H. Ng, J. Yun","doi":"10.23919/EuMIC.2019.8909410","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909410","url":null,"abstract":"This paper presents a four-way combined G-band power amplifier (PA) using a 130-nm SiGe BiCMOS technology. A 185-GHz three-stage single-ended PA based on cascode topology with two driver stages and a power stage is designed. To combine output power of four single-ended PAs, a low-loss four-way reactive power combiner is designed. The developed PA shows a saturated output power of 18.1 dBm with peak gain of 25.9 dB and PAE of 3.5 % at 185 GHz. In addition, the PA provides a 3 dB and 6 dB bandwidth of 27 GHz and 42 GHz, respectively. To the best of our knowledge, the measured power reported in this paper is the highest for SiGe BiCMOS PAs in G-band.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"52 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124307457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
100 W High Power Amplifier MMIC in 0.45 μm GaN Technology 采用0.45 μm GaN技术的100w高功率放大器MMIC
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909397
Pramod K. Singh, K. Suman, Santosh K Gedela, Kishore Bantupalli, K. Y. Varma, R. Gongo
{"title":"100 W High Power Amplifier MMIC in 0.45 μm GaN Technology","authors":"Pramod K. Singh, K. Suman, Santosh K Gedela, Kishore Bantupalli, K. Y. Varma, R. Gongo","doi":"10.23919/EuMIC.2019.8909397","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909397","url":null,"abstract":"Very high output power level is achieved at microwave frequencies using Gallium Nitride technologies due to high breakdown voltage, high current density and high carrier mobility in AlGaN/GaN based High Electron Mobility Transistors. The specific 0.45 $mu$m AlGaN/GaN on SiC HEMT based MMIC technology is developed for this purpose to operate at high DC bias voltage of 50 V to achieve high power at microwave frequencies. This paper demonstrates that a high microwave power exceeding 100 W can be achieved from a single MMIC chip fully matched to 50 Ohm at S-band frequencies. In addition to high power, high power added efficiency greater than 50% is also achieved in this chip. The implemented high-power amplifier chip is a two-stage amplifier achieving output power greater than 50 dBm with power gain better than 22 dB, and power added efficiency exceeding 50% over frequency range of 3.1-3.5 GHz. The MMIC chip layout area is as compact as 5.8 $times$ 3.3 mm2. The saturated output power density of transistor in this chip reaches value of 7 W/mm, maximum possible in this technology.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129554791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
[EuMIC 2019 The End of Indexes Page] [EuMIC 2019索引结束页]
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/eumic.2019.8909521
{"title":"[EuMIC 2019 The End of Indexes Page]","authors":"","doi":"10.23919/eumic.2019.8909521","DOIUrl":"https://doi.org/10.23919/eumic.2019.8909521","url":null,"abstract":"","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123034960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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