M. Hangai, Ryota Komaru, S. Miwa, Y. Kamo, S. Shinjo
{"title":"利用堆叠fet电路的2- 12ghz大功率GaN MMIC开关","authors":"M. Hangai, Ryota Komaru, S. Miwa, Y. Kamo, S. Shinjo","doi":"10.23919/EuMIC.2019.8909421","DOIUrl":null,"url":null,"abstract":"Broadband high-power GaN MMIC switch has been successfully developed. The switch is based on stacked-FET circuits. By employing the configuration, high-power and low-loss performances can be achieved in broadband frequency range. The design equations to minimize insertion loss while maintaining high-power handling capability have been analytically derived. To verify this methodology, an MMIC switch was fabricated at 2-12 GHz. The switch demonstrates the power handling capability of 10W and the insertion loss of 1.5dB.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"2-12 GHz High-Power GaN MMIC Switch Utilizing Stacked-FET Circuits\",\"authors\":\"M. Hangai, Ryota Komaru, S. Miwa, Y. Kamo, S. Shinjo\",\"doi\":\"10.23919/EuMIC.2019.8909421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Broadband high-power GaN MMIC switch has been successfully developed. The switch is based on stacked-FET circuits. By employing the configuration, high-power and low-loss performances can be achieved in broadband frequency range. The design equations to minimize insertion loss while maintaining high-power handling capability have been analytically derived. To verify this methodology, an MMIC switch was fabricated at 2-12 GHz. The switch demonstrates the power handling capability of 10W and the insertion loss of 1.5dB.\",\"PeriodicalId\":228725,\"journal\":{\"name\":\"2019 14th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 14th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EuMIC.2019.8909421\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EuMIC.2019.8909421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
2-12 GHz High-Power GaN MMIC Switch Utilizing Stacked-FET Circuits
Broadband high-power GaN MMIC switch has been successfully developed. The switch is based on stacked-FET circuits. By employing the configuration, high-power and low-loss performances can be achieved in broadband frequency range. The design equations to minimize insertion loss while maintaining high-power handling capability have been analytically derived. To verify this methodology, an MMIC switch was fabricated at 2-12 GHz. The switch demonstrates the power handling capability of 10W and the insertion loss of 1.5dB.
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