用于空间应用的工业0.25 μm GaN技术的热性能

2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI:10.23919/EuMIC.2019.8909408

S. Driad, C. Teyssandier, C. Chang, L. Brunel, A. Couturier, V. Brunel, D. Floriot, H. Stieglauer, H. Blanck

{"title":"用于空间应用的工业0.25 μm GaN技术的热性能","authors":"S. Driad, C. Teyssandier, C. Chang, L. Brunel, A. Couturier, V. Brunel, D. Floriot, H. Stieglauer, H. Blanck","doi":"10.23919/EuMIC.2019.8909408","DOIUrl":null,"url":null,"abstract":"This work is focused on both experimental and modelling analysis of the temperature effect on $0.25- \\mu \\mathrm{m}$ AlGaN/GaN HEMT performances. The temperature-dependence is analyzed by means of DC and Load-Pull measurement in the temperature range from $- 45^{\\circ}\\mathrm{C}$ to +$85^{\\circ}\\mathrm{C}$. The impact of the second harmonic matching on the PAE is also investigated in the paper. Thermal modelling validation is carried out showing a good accuracy of the model to predict the device thermal behaviour. A 20W X-BAND MMIC is designed at UMS. Comparison of the measurement and the simulation at the circuit level demonstrates the UMS GH25-10 capabilities for space applications.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"14 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermal Performances of Industrial 0.25-μm GaN Technology for Space Applications\",\"authors\":\"S. Driad, C. Teyssandier, C. Chang, L. Brunel, A. Couturier, V. Brunel, D. Floriot, H. Stieglauer, H. Blanck\",\"doi\":\"10.23919/EuMIC.2019.8909408\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work is focused on both experimental and modelling analysis of the temperature effect on $0.25- \\\\mu \\\\mathrm{m}$ AlGaN/GaN HEMT performances. The temperature-dependence is analyzed by means of DC and Load-Pull measurement in the temperature range from $- 45^{\\\\circ}\\\\mathrm{C}$ to +$85^{\\\\circ}\\\\mathrm{C}$. The impact of the second harmonic matching on the PAE is also investigated in the paper. Thermal modelling validation is carried out showing a good accuracy of the model to predict the device thermal behaviour. A 20W X-BAND MMIC is designed at UMS. Comparison of the measurement and the simulation at the circuit level demonstrates the UMS GH25-10 capabilities for space applications.\",\"PeriodicalId\":228725,\"journal\":{\"name\":\"2019 14th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"14 5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 14th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EuMIC.2019.8909408\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EuMIC.2019.8909408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本工作的重点是对温度对$0.25- \mu \ mathm {m}$ AlGaN/GaN HEMT性能的影响进行实验和建模分析。在$- 45^{\circ}\mathrm{C}$到+$85^{\circ}\mathrm{C}$的温度范围内，通过直流和负载-拉力测量分析了温度依赖性。本文还研究了二次谐波匹配对谐波阻抗的影响。进行了热建模验证，显示了模型预测器件热行为的良好准确性。在UMS设计了一个20W x波段MMIC。电路级的测量和仿真比较证明了UMS GH25-10在空间应用中的能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Thermal Performances of Industrial 0.25-μm GaN Technology for Space Applications

This work is focused on both experimental and modelling analysis of the temperature effect on $0.25- \mu \mathrm{m}$ AlGaN/GaN HEMT performances. The temperature-dependence is analyzed by means of DC and Load-Pull measurement in the temperature range from $- 45^{\circ}\mathrm{C}$ to +$85^{\circ}\mathrm{C}$. The impact of the second harmonic matching on the PAE is also investigated in the paper. Thermal modelling validation is carried out showing a good accuracy of the model to predict the device thermal behaviour. A 20W X-BAND MMIC is designed at UMS. Comparison of the measurement and the simulation at the circuit level demonstrates the UMS GH25-10 capabilities for space applications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 14th European Microwave Integrated Circuits Conference (EuMIC)

自引率

0.00%

发文量