A miniatured 28-GHz FEM using a 0.15-μm InGaAs/GaAs E-mode pHEMT process

Hui-Dong Lee, Sunwoo Kong, Seunghyun Jang, Kwang-Seon Kim, Kwangchun Lee, Bonghyuk Park
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引用次数: 5

Abstract

This paper presents a miniaturized 28-GHz FEM implemented in 0.15-μm InGaAs/GaAs E-mode pHEMT process. It is designed for use with 28-GHz switching beamforming systems. In order to miniaturize the system, the RF FEM is mounted on the printed circuit board in the form of individual PA, switch, and LNA chips, and development has been made to facilitate the mounting of mobile terminals. The results of the FEM transmitter verification including the implemented filter on the PCB have a gain of 17.9 dB, an output P1 dB of 24.2 dBm and an EVM of -30 dB at 20 dBm output. As a result of the receiver verification, the gain is around 20 dB, the input P1 dB is -30 dBm, and the EVM performance of -30 dB is tested at -10 dBm output.
采用0.15 μm InGaAs/GaAs E-mode pHEMT工艺的微型28 ghz FEM
提出了一种采用0.15 μm InGaAs/GaAs E-mode pHEMT工艺实现的小型化28-GHz FEM。它设计用于28-GHz切换波束形成系统。为了使系统小型化,射频FEM以单个PA、开关、LNA芯片的形式安装在印刷电路板上,并进行了便于移动终端安装的开发。包括在PCB上实现的滤波器在内的FEM发射机验证结果显示,增益为17.9 dB,输出P1 dB为24.2 dBm,输出20 dBm时EVM为-30 dB。经接收机验证,增益在20db左右,输入P1 dB为- 30dbm,在- 10dbm输出下测试- 30db的EVM性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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