集成射频功率电路中用于反向操作的浮动低频地GaN-HEMT

O. Bengtsson, Sophie Paul, W. Heinrich
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引用次数: 1

摘要

提出了一种具有浮动低频接地的集成GaN-HEMT。浮动的低频地使射频应用中的反向操作成为可能,使得在偏置直流和低频电压下操作成为可能。射频通过MIM电容电容耦合到地。片上射频隔离是通过短路RF $\lambda$/4线建立的。该晶体管在测量和模拟的小信号行为之间表现出良好的一致性。与标准的双端口设备相比,三端口设备的稳定性更具挑战性,特别是在LF到RF过渡区域以及RF频段。使用负载-拉力测量验证了大信号行为,与非浮动器件相比,显示出0.7 dB的功率下降,但漏极效率几乎不受影响。在10 GHz时,1 mm网关宽度器件的饱和输出功率为35.4 dBm (3.5 W),最大漏极效率为50%。在20v VDS下,当低频地电位为8v时,浮动操作显示出与低频地电位为0v时接地操作相同的小信号结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A GaN-HEMT with Floating LF Ground for Reverse Operation in Integrated RF Power Circuits
An integrated GaN-HEMT with floating low-frequency (LF) ground is presented. The floating LF ground enables reverse operation in RF applications making operation at offset DC and LF voltages possible. The RF is capacitive coupled to ground using MIM capacitors. On-chip RF isolation is established through a short-circuited RF $\lambda$/4-line. The transistor shows good agreement between measured and simulated small-signal behavior. Compared to standard two-port devices, the stability of the three-port device is more challenging, particularly in the LF to RF transition region but also in the RF band. The large-signal behavior is verified using load-pull measurements and shows 0.7 dB power degradation compared to the non-floating device but drain efficiency is almost unaffected. At 10 GHz the 1 mm gatewidth device shows a saturated output power of 35.4 dBm (3.5 W) and a maximum drain efficiency of 50 % is achieved. Floating operation at 20 V VDS shows identical small-signal results with the LF ground potential at 8 V as for grounded operation with the LF ground potential at 0 V.
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