Thermal Performances of Industrial 0.25-μm GaN Technology for Space Applications

Abstract

This work is focused on both experimental and modelling analysis of the temperature effect on $0.25- \mu \mathrm{m}$ AlGaN/GaN HEMT performances. The temperature-dependence is analyzed by means of DC and Load-Pull measurement in the temperature range from $- 45^{\circ}\mathrm{C}$ to +$85^{\circ}\mathrm{C}$. The impact of the second harmonic matching on the PAE is also investigated in the paper. Thermal modelling validation is carried out showing a good accuracy of the model to predict the device thermal behaviour. A 20W X-BAND MMIC is designed at UMS. Comparison of the measurement and the simulation at the circuit level demonstrates the UMS GH25-10 capabilities for space applications.