2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)最新文献_第7页

Effect of current pulse width on xenon Z-pinch discharge plasma for extreme ultraviolet source 脉冲宽度对极紫外氙气z捏缩放电等离子体的影响

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518699

P. Lu, T. Watanabe, S. Katsuki, T. Sakugawa, H. Akiyama

{"title":"Effect of current pulse width on xenon Z-pinch discharge plasma for extreme ultraviolet source","authors":"P. Lu, T. Watanabe, S. Katsuki, T. Sakugawa, H. Akiyama","doi":"10.1109/IPMHVC.2012.6518699","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518699","url":null,"abstract":"Extreme ultraviolet (EUV) lithography is the leading candidate as the next-generation technique for printing semiconductor chips at the half-pitch 22 nm node and even beyond. The source of EUV radiation remains a key issue for industrial application of EUVL. Previously, our group has designed both xenon and tin plasma as EUV source. Studies on EUV emission and plasma dynamics indicated that Z-pinch plasma motion along the axial direction may enlarge the size of EUV-emitting plasma, un-favorable for its application as the EUVL source due to the limit of EUV scanner. Amplitude, rise time and duration of the current pulse, affecting the plasma dynamics and EUV-emitting size are most important parameters. In this paper, we present a study of current pulse effects on the xenon plasma EUV source. The shortest current pulse width has been reduced to 85 ns by decreasing the inductance of discharge circuit. Four current pulse conditions have been designed with current pulse widths of 85 ns, 110 ns, 230 ns and 460 ns. Here, comparative results of the 85 ns and 110 ns current-driven xenon Z-pinch plasma EUV sources are reported, and EUV signals, EUV-emitting plasma size and plasma dynamic motion are compared. Results show that use of a shorter current pulse inhibits the axial plasma outflow, and both axial and radial size of EUV-emitting plasma have been reduced, which benefits its application as EUV lithography source.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121545424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Surface flashover of nanodielectrics with varying electrode architectures in partial vacuum under DC and kHz pulsed fields 不同电极结构的纳米电介质在直流和kHz脉冲场下的局部真空表面闪络

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518766

Zhenhong Li, H. Kirkici

引用次数: 2

High average power high voltage modulator using a dual pulse transformer circuit 高平均功率高压调制器采用双脉冲变压器电路

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518672

W. Hartmann, K. Rohde, N. Grass, M. Schwendner

引用次数: 0

Atmospheric electromagnetic plasmadynamic system for industrial applications 工业用大气电磁等离子体动力学系统

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518717

Y. Chivel’, V. Bochkov, Y. Gryshin, V. Suslov, V. Vermel

引用次数: 1

Study on Q-V Lissajous figures in nanosecond-pulsed surface discharge 纳秒脉冲表面放电中的 Q-V 利萨如斯图研究

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518800

Hui Jiang, T. Shao, Cheng Zhang, Wenfeng Li, P. Yan, E. Schamiloglu

引用次数: 3

A 600V, 1KA compact LTD module using power MOSFETs 采用功率mosfet的600V, 1KA紧凑型有限责任模块

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518708

P. Iyengar, T. C. Lim, S. Finney, B. Williams, M. Sinclair

引用次数: 2

On the measurements of the dielectric constant and dissipation factor of various elastomers 各种弹性体介电常数和耗散系数的测量

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518761

L. Nasrat, R. Sharkawy

引用次数: 0

Analysis of the on-state resistance influenced by the on-state current 导通电流对导通电阻影响的分析

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518828

Baojie Wang, Kefu Liu, J. Qiu

引用次数: 0

X-ray emission from a table-top X-pinch device 桌面X-pinch装置的x射线发射

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518700

Ran Zhang, X. Zou, Xinlei Zhu, Shen Zhao, Haiyun Luo, Xinxin Wang

{"title":"X-ray emission from a table-top X-pinch device","authors":"Ran Zhang, X. Zou, Xinlei Zhu, Shen Zhao, Haiyun Luo, Xinxin Wang","doi":"10.1109/IPMHVC.2012.6518700","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518700","url":null,"abstract":"Based on a compact (2m×1m×1.5m) pulsed current generator (~ 100 kA, 60ns), a table-top X-pinch device was constructed and tested. The load current was almost unchanged for X-pinches made using different wires (5μm, 8μm, 10μm and 13μm Wu wire> 13μm and 25μm Mo wire), which means that the impedance of the wires is much lower than the total impedance of the load section. When the above mentioned wires were used as two-wire load, X-ray pulses from X-pinch were always observed. As the mass of the two-wire load increases, the time delay of the x-ray emission relative to the beginning of the load current increases. As was expected, the X-ray pulse consists of single peak or two overlapping peaks of subnanosecond pulsewidth. The x-ray source is usually one point or two partly overlapping points, which is consistent with the measurement of x-ray pulse. The size of x-ray point source is ranging from 5 Dm to 50 Dm. Two X-ray pulses with a time interval on the order of 10 ns were often observed for a small mass load when the load current is high enough. The appearance of the second X-ray pulse is attributed to the second pinch of the plasma.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122323151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Comparison of CsI coated carbon velvet and aluminum cathodes operated at current density on the order of 300 A/cm2 在电流密度为300 A/cm2左右时，CsI涂层碳天鹅绒阴极与铝阴极的比较

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518859

C. Lynn, J. Walter, A. Neuber, J. Dickens, M. Kristiansen

{"title":"Comparison of CsI coated carbon velvet and aluminum cathodes operated at current density on the order of 300 A/cm2","authors":"C. Lynn, J. Walter, A. Neuber, J. Dickens, M. Kristiansen","doi":"10.1109/IPMHVC.2012.6518859","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518859","url":null,"abstract":"Many high power microwave devices use explosive or flashover electron emission cathodes in order to generate the electron beam and thus drive the device. These diodes are simple to operate, requiring no heater or other external systems, and are capable of generating beam currents of several kA at accelerating voltages on the order of 100s of kV. However, they generally suffer from non-uniform emission, anode heating, out-gassing, and pulse shortening due to anode and cathode plasma expansion. The ability to rep-rate such a diode is generally limited by anode heating and out-gassing which are both affected by beam uniformity. Two diodes are compared in this work. One uses a machined aluminum cathode, which is made from solid aluminum with grooves milled onto the surface. The other diode utilizes a carbon velvet cathode which is CVD coated with CsI. Time integrated scintillator images of the electron beam at the anode were taken for both the carbon velvet and aluminum cathodes. Additionally, time resolved images of the emission centers were taken for the carbon velvet cathodes. Data sets of over 1000 shots were taken with each cathode and shot to shot variation in the peak “turn-on” electric field are compared. The lifetime of the aluminum cathode was exceeded before 1000 shots, whereas the carbon velvet cathode showed no degradation in operation.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129963496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2