采用功率mosfet的600V, 1KA紧凑型有限责任模块

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI:10.1109/IPMHVC.2012.6518708

P. Iyengar, T. C. Lim, S. Finney, B. Williams, M. Sinclair

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引用次数: 2

摘要

mosfet和igbt目前在大电流脉冲功率应用中的应用有限，因为它们的功率密度较低，并且开发这些器件阵列涉及的复杂性。本文提出了一个紧凑的600V, 1kA模块，使用功率MOSFET和专门设计的MOSFET驱动板和8个并联MOSFET。所提出的设置使用最小的组件以及超快的重复开关提供更高的功率密度。实验结果表明，脉冲宽度为100ns，开关次数<;在单发和连拍模式下工作10ns。

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A 600V, 1KA compact LTD module using power MOSFETs

MOSFETs and IGBTs currently have limited use in high current pulsed power applications due to their lower power density and the complexity involved in developing an array of these devices. This paper proposes a compact 600V, 1kA module using power MOSFETs with specifically designed MOSFET driver boards and 8 parallel MOSFETs. The proposed set up offers a higher power density using minimal components along with ultrafast repetitive switching. Experimental results demonstrate pulse widths of 100ns and switching times <; 10ns under single shot and burst mode operation.

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2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

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