2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)最新文献

Experimental impulse response of grounding systems 接地系统脉冲响应实验研究

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518701

M. S. Castro, E. G. da Costa, R. Freire, E. Macedo, M. Rodrigues, L. Gomes

引用次数: 1

Triggered operation of a corona controlled and stabilized cascade switch 电晕控制和稳定级联开关的触发操作

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518695

M. Given, Long Li, M. Wilson, I. Timoshkin, Tao Wang, S. Macgregor, J. Lehr

引用次数: 1

Low jitter, high voltage, repetitive laser triggered SF6 gas insulated spark gaps 低抖动，高电压，重复激光触发SF6气体绝缘火花隙

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518696

F. Hegeler, M. Myers, M. Wolford, J. Sethian, A. M. Fielding

引用次数: 1

PSPICE modeling of Silicon Carbide MOSFETS and device parameter extraction 碳化硅mosfet的PSPICE建模及器件参数提取

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518860

A. Bilbao, S. Bayne

{"title":"PSPICE modeling of Silicon Carbide MOSFETS and device parameter extraction","authors":"A. Bilbao, S. Bayne","doi":"10.1109/IPMHVC.2012.6518860","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518860","url":null,"abstract":"The goal of this research is to develop device models for Silicon Carbide (SiC) MOSFETs. Parameters are extracted and used to create PSPICE models that can be utilized for circuit simulation. Two silicon carbide power MOSFETs made available by CREE Semiconductor are considered. The first silicon carbide power MOSFET tested is the CMF20120A64410. This MOSFET features a 1200V drain-to-source breakdown voltage and 30A continuous current capacity. The second device tested is an experimental MOSFET that is still not available in the market as of the date of this paper. The experimental MOSFET features a 1200V drain-to-source breakdown voltage and 80A continuous current capability. Custom made circuits are developed for extracting some of the parameters. In some cases where the tests only require low drain current, a HP B1505A curve tracer is used to aid the development of the model. The effect of temperature over the gate threshold voltage is also investigated. By externally increasing and monitoring the die temperature of the SiC MOSFETs, new device parameters can be extracted and modeled. Once the parameters are extracted they are converted into a PSPICE model. The model is tested and compared to the real device to verify accuracy. This is achieved using custom switching circuits with both inductive and resistive loads and software suites like MATLAB.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114915611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Reducing turn-on dissipation of RSD from application 减少RSD在应用过程中的导通损耗

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518683

L. Liang, Quan Wei, Wu Hong, Xueqing Liu, Yuehui Yu

引用次数: 0

Influence of heat treatment on properties of high-current metallized film capacitors 热处理对大电流金属化薄膜电容器性能的影响

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518866

Z. Kong, Bei Xu, Chunya Tong, Zaifei Luo

引用次数: 3

Susceptibility of Electro-Explosive Devices to high pulsed electric fields 电爆炸装置对高脉冲电场的敏感性

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518716

D. Reale, J. Mankowski, J. Dickens

{"title":"Susceptibility of Electro-Explosive Devices to high pulsed electric fields","authors":"D. Reale, J. Mankowski, J. Dickens","doi":"10.1109/IPMHVC.2012.6518716","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518716","url":null,"abstract":"Commercially available Electro-Explosive Devices (EEDs), such as blasting caps, use electrical current to initiate a primary charge. Various detonators including bridge wire, match-type, exploding bridge wire, and slapper. The basic operating principle of the match-type device is to heat the ignition element to the ignition temperature of the primary explosive. The normal operation current profiles, both constant current and pulsed excitation, are well known, as is the ignition temperature. However, as safety and reliability are of great concern, both in the operation and storage of EEDs, the susceptibility of these devices to transient or spurious fields is of interest. The susceptibility of match-type EEDs to high pulsed electric fields is examined. A Finite Element Method (FEM) simulation is performed using COMSOL to determine the induced current in the bridgewire due to applied electric fields and the resulting Joule heating of the wire. Several situations are investigated including the EED in conductive and non-conductive media and leads open or terminated representing operational and storage conditions.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114043586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Behavior of HV cable at short circuit and related phenomena 高压电缆的短路行为及相关现象

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518711

A. Pokryvailo, C. Scapellati

{"title":"Behavior of HV cable at short circuit and related phenomena","authors":"A. Pokryvailo, C. Scapellati","doi":"10.1109/IPMHVC.2012.6518711","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518711","url":null,"abstract":"Discharges in many HV loads are unavoidable at voltages close to their operational limits. Such loads may be vacuum gaps, e.g., X-ray tubes. The discharge characteristics depend not only on the state of the load, but, in the case of a vacuum gap, on external circuitry. In cabled connections, the cable length is critical. The latter is mostly overlooked in literature. In this paper, we consider two cases. In the first, regular connection, the cable shield is connected to ground on both sides. Then the processes in the cable can be described by conventional transmission line equations. We show the pattern of traveling waves developing at short-circuit conditions and overvoltages (OV) at the power supply side as a function of the cable parameters. In the second case, the shield at the power supply side is grounded, and at the load side it is floating (open space connection). It is shown that conventional transmission line model is no longer applicable. PSpice equivalent circuits with lumped parameters are developed and analyzed. It is shown that the cable insulation is overstressed at the load side in open-space connections, and at the power supply side in regular connections. Experimental results obtained on low-voltage models are presented.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"230 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121918802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Interrupting capability of vacuum interrupter by various parameter 不同参数下真空断流器的断流能力

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518834

C. Gu, Kun-A Lee, Heung-Jin Ju, K. Ko, Cheol-Kyou Lee

引用次数: 0

Analysis of Dielectric Electro Active Polymer actuator and its high voltage driving circuits 介质电活性聚合物致动器及其高压驱动电路分析

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518779

P. Thummala, Lina Huang, Zhe Zhang, M. A. E. Andersen

引用次数: 11