2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)最新文献_第10页

Compact Electric Power System for Tokamak 托卡马克紧凑型电力系统

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518852

Ge Li

{"title":"Compact Electric Power System for Tokamak","authors":"Ge Li","doi":"10.1109/IPMHVC.2012.6518852","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518852","url":null,"abstract":"The International Thermonuclear Experimental Reactor (ITER) is now implemented with Tokamak which requires about 1 GVar reactive power to compensate its power system for superconducting magnets where about 0.2 GVar is transferred from France Electrical Power Network, the other 0.75 GVar is generated by the system of Reactive Power Compensation and Harmonic Filtering, the Static VAR Compensator (SVC) configuration. ITER can experimentally generate 500 MW fusion thermal power in 400 s long pulse mode with about half of its construction area is for its power suppliers. It could only generate about 500 MW/3=167 MWe active electric power if it is to be configured with pressured water reactor due to that it is only about 1/3 conversion efficiency from thermal energy to electric energy. For such fusion machine, the requirement for reactive power is much larger than the active power it generates. Based on this requirement, one compact pulsed synchronous generator is suggested for this purpose. It can not only generate the fundamental reactive power to compensate and stabilize the power network, but also the active power for putting power on the grid. Due to its two purposes in one device configuration, it becomes cheap and reliable by implement it in the design of future fusion power plant for demonstration. Some consideration has been done to the special synchronous generator, which is intended for the concept design of Chinese Fusion Engineering Testing Reactor, targeting the compact Electric Power System for superconducting Tokamak.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123019802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Deterioration trend on electrical treeing of underground cable insulation 地下电缆绝缘电气树的劣化趋势

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518818

R. Wu, Chien-Kuo Chang

{"title":"Deterioration trend on electrical treeing of underground cable insulation","authors":"R. Wu, Chien-Kuo Chang","doi":"10.1109/IPMHVC.2012.6518818","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518818","url":null,"abstract":"This study discussed the relationship between the electric tree growth and partial discharge characteristics in the cross-linked polyethylene (XLPE), and proposed the evaluation rule of insulation status. The partial discharge was tested by cutting the cable insulation XLPE in specific depth, to make a 4mm clearance between the pinpoint and the semi-conducting layer. A fixed voltage was applied until destruction. The voltage was 14, 15, 16 and 17 kV respectively. Meanwhile, the computer captured the partial discharge signals regularly and processed them into phase analysis data. According to the analysis, the discharge parameters of various tests were highly similar, and the discharge number was more suitable to be the characteristic value of insulation diagnosis. The characteristic curve and differential characteristic slope of characteristic values of various tests could be obtained using regression analysis. The confidence intervals were calculated according to the characteristic slope turning points of all tests as the thresholds of initial term, final term and midterm of insulation. This is the insulation status evaluation rule proposed in this paper.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115589080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Serial arrangement of ferrimagnetic nonlinear transmission lines 铁磁非线性传输线串联布置

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518721

J. Bragg, C. Simmons, J. Dickens, A. Neuber

引用次数: 4

Parallel operation of four spark gaps in a pulser system 脉冲发生器系统中四个火花间隙的并联操作

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518805

H. Rahaman, J. W. Nam, B. Lee, S. Nam, J. Ahn, S. Jo, H. Kwon

引用次数: 1

Selectively grown Carbon Nanotubes (CNTs): Characterization and field emission properties 选择性生长的碳纳米管(CNTs):表征和场发射特性

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518807

Chung-Nan Tsai, H. Kirkici

{"title":"Selectively grown Carbon Nanotubes (CNTs): Characterization and field emission properties","authors":"Chung-Nan Tsai, H. Kirkici","doi":"10.1109/IPMHVC.2012.6518807","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518807","url":null,"abstract":"These Carbon Nanotubes (CNTs) are considered as one of the promising electron-emitting materials available for use in cold cathode applications such as vacuum microelectronic devices. It has been shown that due to the high aspect ratio (small diameter and relatively long length) it is possible to obtain electron emission at a relatively low applied electric field. Because of this property, CNTs may play an important role when used as cold cathode material in plasma devices. In this work, the experimental results of field emission characteristics of CNTs fabricated using Chemical Vapor Deposition (CVD) are presented. The samples are selectively grown randomly oriented multi-walled CNTs (MWNTs) and synthesize onto plain silicon (n-type 100) substrates. A thin catalyst (Fe) film is first deposited by DC magnetron sputtering and high-quality films of MWNTs are grown in a thermal CVD furnace in a mixture of acetylene and argon gasses, after lithographic lift-off patterning of a metal catalyst layer on the wafer. The measurement results indicate that randomly oriented CNTs have significant field emission capabilities to be used as cold cathode emitters in plasma devices.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123430520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

DV/DT immunity and recovery time capability of 1.0 cm2 silicon carbide SGTO 1.0 cm2碳化硅SGTO的DV/DT抗扰度和恢复时间性能

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518753

A. Ogunniyi, H. O’Brien, C. Scozzie, W. Shaheen, A. Agarwal, Lin Cheng, V. Temple

引用次数: 3

Applying Hilbert-Huang transform on partialdischarge pattern recognition of a gas insulated switchgear Hilbert-Huang变换在气体绝缘开关柜局部放电模式识别中的应用

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518705

Hong-Chan Chang, Feng‐Chang Gu, C. Kuo

引用次数: 1

Performance of a corona-stabilised switch activated by fast-rising trigger pulses 由快速上升触发脉冲激活的电晕稳定开关的性能

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518698

M. Wilson, W. Boekhoven, I. Timoshkin, M. Given, S. Macgregor, Tao Wang, J. Lehr

{"title":"Performance of a corona-stabilised switch activated by fast-rising trigger pulses","authors":"M. Wilson, W. Boekhoven, I. Timoshkin, M. Given, S. Macgregor, Tao Wang, J. Lehr","doi":"10.1109/IPMHVC.2012.6518698","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518698","url":null,"abstract":"Plasma closing switches used in pulsed-power applications have traditionally been insulated with sulphur hexafluoride (SF6) due to its high dielectric strength. The global warming potential of SF6, however, is estimated to be 23900 times greater than that of CO2. The present study details tests conducted in order to replace SF6 with air as the switching medium within an existing corona-stabilised switch, the main goal being to extend the triggering range by deploying a fast-rising (~40 ns) trigger pulse. Delay times were measured and jitter calculated at a range of pressures, for different triggering regimes. The most stable performance was found with a negative-polarity dc voltage across the main electrodes, and a positive-polarity trigger voltage. With this triggering regime, the average delay time to breakdown was ~300 ns over a 2-bar pressure range. The minimum calculated jitter was 5 ns. When the switch was charged with a positive dc voltage and the trigger pulse was of negative polarity, the triggering range was extended by up to 7 kV compared to the triggering regime previously used (μs pulse).","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122893012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Compact silicon SGTO module for pulse switching beyond 6 kV, 100 kA 紧凑型硅SGTO模块，用于6kv, 100ka以上的脉冲开关

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518668

H. O’Brien, W. Shaheen, A. Ogunniyi, V. Temple, C. Scozzie

引用次数: 1

Design of a compact, battery-powered rep-rate charger for an 88-kJ capacitor bank for EML applications 设计一个紧凑的，电池供电的充电率为88-kJ电容器组EML应用

2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518687

B. Huhman, J. Neri

引用次数: 4