Compact silicon SGTO module for pulse switching beyond 6 kV, 100 kA

Abstract

In a continuing effort to reduce the weight and volume of high-power pulse switches, the U.S. Army Research Laboratory and Silicon Power Corp. have developed new Super-GTO-based switch modules that out-perform previous designs while maintaining compact size. These switch modules have recently been demonstrated at a 50% increase in hold-off voltage and 30% increase in pulse current (compared to switches presented at PMC 2006) while utilizing the same area of silicon in the same volume packaging. Each switch module is composed of eight parallel 3.5 cm2 silicon Super-GTOs, for a total silicon area of 28 cm2 and a package volume of 0.14 L. The pulse performance at the individual Super-GTO device level was improved by modifying the emitter layout and metallization to reduce on-state resistance and maximize current-spreading across the silicon area. Modules were pulsed over 110 kA for 500 pulses with consistent pulse performance.