减少RSD在应用过程中的导通损耗

L. Liang, Quan Wei, Wu Hong, Xueqing Liu, Yuehui Yu
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引用次数: 0

摘要

本文报道了本课程组在降低反向开关电阻器(RSD)导通损耗方面所做的工作。通过建立RSD的二维数值模型,发现在触发结束时,p和n基区的额外电荷量仅为电流积分值的24.75%左右,因此应该对RSD进行过预充电,以降低导通电压。两步法有利于增加基区额外等离子体密度。仿真和实验结果均表明,两步法的RSD导通特性优于传统的放电方法。在一定的触发时间存在最小导通电压,因此控制好触发时间是减小导通损耗的另一种方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reducing turn-on dissipation of RSD from application
The work reducing turn-on dissipation of the Reversely Switched Dynistor(RSD) from application done in our group is reported in this paper. By establishing the two-dimensional numerical model of RSD, the extra charge amount in the p and n base region is found to be only about 24.75% of the integral value of current at the end of triggering, so the RSD should be over pre charged in order to reduce the turn-on voltage. A two-step method is in favor of increasing the extra plasma density in the base region. Both the simulation and experimental results show that the turn-on characteristics of RSD are better by the two-step method than the traditional discharge method. There exists a minimum for the turn-on voltage at a certain triggering time, so well controlling the triggering time is another way of reducing turn-on dissipation.
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