脉冲宽度对极紫外氙气z捏缩放电等离子体的影响

P. Lu, T. Watanabe, S. Katsuki, T. Sakugawa, H. Akiyama
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引用次数: 1

摘要

极紫外(EUV)光刻技术是在半间距22nm节点甚至更低的节点上印刷半导体芯片的下一代技术的主要候选人。EUV辐射源的研究一直是EUVL工业应用的关键问题。在此之前,我们小组已经设计了氙和锡等离子体作为EUV源。对极紫外光发射和等离子体动力学的研究表明,Z-pinch等离子体沿轴向运动可能会使极紫外光发射等离子体的尺寸增大,由于极紫外光扫描仪的限制,不利于其作为极紫外光源的应用。电流脉冲的幅度、上升时间和持续时间是影响等离子体动力学和euv发射尺寸的最重要参数。本文研究了电流脉冲对氙等离子体极紫外光源的影响。通过减小放电电路的电感,使最短电流脉宽降至85ns。设计了四种电流脉冲条件,电流脉冲宽度分别为85、110、230和460 ns。本文报道了85 ns和110 ns电流驱动氙气z夹尖等离子体极v源的对比结果,并对极v信号、极v发射等离子体尺寸和等离子体动态运动进行了比较。结果表明,较短的脉冲电流抑制了等离子体轴向外流,减小了极紫外光射等离子体的轴向和径向尺寸,有利于其作为极紫外光刻光源的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of current pulse width on xenon Z-pinch discharge plasma for extreme ultraviolet source
Extreme ultraviolet (EUV) lithography is the leading candidate as the next-generation technique for printing semiconductor chips at the half-pitch 22 nm node and even beyond. The source of EUV radiation remains a key issue for industrial application of EUVL. Previously, our group has designed both xenon and tin plasma as EUV source. Studies on EUV emission and plasma dynamics indicated that Z-pinch plasma motion along the axial direction may enlarge the size of EUV-emitting plasma, un-favorable for its application as the EUVL source due to the limit of EUV scanner. Amplitude, rise time and duration of the current pulse, affecting the plasma dynamics and EUV-emitting size are most important parameters. In this paper, we present a study of current pulse effects on the xenon plasma EUV source. The shortest current pulse width has been reduced to 85 ns by decreasing the inductance of discharge circuit. Four current pulse conditions have been designed with current pulse widths of 85 ns, 110 ns, 230 ns and 460 ns. Here, comparative results of the 85 ns and 110 ns current-driven xenon Z-pinch plasma EUV sources are reported, and EUV signals, EUV-emitting plasma size and plasma dynamic motion are compared. Results show that use of a shorter current pulse inhibits the axial plasma outflow, and both axial and radial size of EUV-emitting plasma have been reduced, which benefits its application as EUV lithography source.
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