P. Iyengar, T. C. Lim, S. Finney, B. Williams, M. Sinclair
{"title":"A 600V, 1KA compact LTD module using power MOSFETs","authors":"P. Iyengar, T. C. Lim, S. Finney, B. Williams, M. Sinclair","doi":"10.1109/IPMHVC.2012.6518708","DOIUrl":null,"url":null,"abstract":"MOSFETs and IGBTs currently have limited use in high current pulsed power applications due to their lower power density and the complexity involved in developing an array of these devices. This paper proposes a compact 600V, 1kA module using power MOSFETs with specifically designed MOSFET driver boards and 8 parallel MOSFETs. The proposed set up offers a higher power density using minimal components along with ultrafast repetitive switching. Experimental results demonstrate pulse widths of 100ns and switching times <; 10ns under single shot and burst mode operation.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPMHVC.2012.6518708","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
MOSFETs and IGBTs currently have limited use in high current pulsed power applications due to their lower power density and the complexity involved in developing an array of these devices. This paper proposes a compact 600V, 1kA module using power MOSFETs with specifically designed MOSFET driver boards and 8 parallel MOSFETs. The proposed set up offers a higher power density using minimal components along with ultrafast repetitive switching. Experimental results demonstrate pulse widths of 100ns and switching times <; 10ns under single shot and burst mode operation.