Progress in Photovoltaics最新文献

{"title":"Approaches for III-V/Si tandem solar cells and comparative studies on Si tandem solar cells","authors":"Masafumi Yamaguchi,&nbsp;Tatsuya Takamoto,&nbsp;Hiroyuki Juso,&nbsp;Kyotaro Nakamura,&nbsp;Ryo Ozaki,&nbsp;Taizo Masuda,&nbsp;Takashi Mabuchi,&nbsp;Kenichi Okumura,&nbsp;Nobuaki Kojima,&nbsp;Yoshio Ohshita","doi":"10.1002/pip.3780","DOIUrl":"10.1002/pip.3780","url":null,"abstract":"<p>Photovoltaic (PV)-powered vehicle applications are very attractive for reducing CO₂ emission and creation of new market. Development of Si tandem solar cells is very promising for high-efficiency and low-cost solar cells. This paper presents our approaches for III–V/Si 3-junction tandem solar cells. In this paper, 24.9% efficiency Si heterojunction solar cells and mechanically stacked four-terminal 35.8% InGaP/GaAs/Si three-junction tandem solar cell are shown. Roadmap for realizing high-efficacy three-junction tandem solar cells of more than 40% is discussed in this paper. Because efficiencies of record cell of 36.1% with III–V/Si three-junction tandem cells and 33.9% with perovskite/Si two-junction cells are lower compared to 39.5% with III–V three-junction solar cells, it is necessary to clarify and reduce several losses of Si tandem solar cells. This paper presents high efficiency potential of III–V/Si three-junction and perovskite/Si two-junction solar cells analyzed by using our analytical procedure and discusses about non-radiative recombination, optical, and resistance losses in those Si tandem cells. Current status of various solar cell module efficiencies including our new record efficiency Si tandem solar cell module with an efficiency of 33.66% is also analyzed.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 1","pages":"116-125"},"PeriodicalIF":8.0,"publicationDate":"2024-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139584935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Field-representative evaluation of PID-polarization in TOPCon PV modules by accelerated stress testing","authors":"Peter Hacke,&nbsp;Sergiu Spataru,&nbsp;Brian Habersberger,&nbsp;Yifeng Chen","doi":"10.1002/pip.3774","DOIUrl":"10.1002/pip.3774","url":null,"abstract":"<p>Potential-induced degradation-polarization (PID-p) can reduce module power, but how to project the extent to which PID-p may occur in field conditions considering the factors of system voltage, condensed moisture, temperature, and illumination has not been clarified. Using tunnel oxide passivated contact (TOPCon) modules, this work demonstrates a method to test full-size crystalline silicon PV modules for PID-p to provide field-representative results. In initial screening tests with positive or negative 1000 V electrical bias applied at 60°C for 96 h using Al foil electrodes on the glass surfaces, the module type exhibited reversible PID-p only on the front face when the cell circuit was in negative voltage potential. No PID was detected on the rear after testing in either polarity. We then evaluated the PID-p sensitivity on the front side under different UV irradiances while maintaining the glass surface wet to estimate real-world susceptibility to PID-p. The magnitude of the observed behavior was fit using a previously developed charge transfer and depletion by light model. Whereas power loss with −1000 V applied to the cell circuit at 60°C for 96 h in the dark was about 30%, testing the module front under 0.051 W·m⁻² nm⁻¹ at 340 nm UVA irradiation using fluorescent tubes, the mean degradation was only 3%. When the modules were tested in the dark for PID-p with in situ dark current–voltage (I-V) characterization, the thermal activation energy for degradation was 0.71 eV; for recovery in the dark, it was 0.58 eV. Whereas recovery from the degraded state at 60°C in the dark without voltage bias was 5% absolute in 38 h, rapid recovery of about 5% absolute was observed with 1000 W·s/m² exposure at 25°C using a flash tester.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 5","pages":"346-355"},"PeriodicalIF":6.7,"publicationDate":"2024-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3774","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139584862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unveiling the mechanism of attaining high fill factor in silicon solar cells","authors":"Hao Lin,&nbsp;Genshun Wang,&nbsp;Qiao Su,&nbsp;Can Han,&nbsp;Chaowei Xue,&nbsp;Shi Yin,&nbsp;Liang Fang,&nbsp;Xixiang Xu,&nbsp;Pingqi Gao","doi":"10.1002/pip.3775","DOIUrl":"10.1002/pip.3775","url":null,"abstract":"<p>A world record conversion efficiency of 26.81% has been achieved recently by LONGi team on a solar cell with industry-grade silicon wafer (274 cm², M6 size). An unparalleled high fill factor (<i>FF</i>) of up to 86.59% has also been certified in a separated device. The theoretical <i>FF</i> limit has been predicted to be 89.26%, while the practical <i>FF</i> is far below this limit for a prolonged interval due to the constraints of recombination (i.e., SRH recombination) and series resistance. The ideality factor (<i>m</i>) in the equivalent circuit of silicon solar cells is consistently ranging from 1 to 2 and rarely falls below 1, resulting in a relatively lower <i>FF</i> than 85%. Here, this work complements a systematic simulation study to demonstrate how to approach the <i>FF</i> limit in design of silicon solar cells. Firstly, a diode component with an ideality factor equal to 2/3 corresponding to Auger recombination is incorporated in the equivalent circuit for LONGi ultra-high <i>FF</i> solar cell; Secondly, an advanced equivalent circuit is put forward for comprehensive analysis of bulk recombination and surface recombination on the performance, in which specific ideality factors are directly correlated with various recombination mechanisms exhibiting explicit reverse saturation current density (<i>J</i>₀). Finally, we evaluate precisely the route for approaching theoretical <i>FF</i> in practical solar cell fabrication based on electrical design parameters using the developed model.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 6","pages":"359-371"},"PeriodicalIF":6.7,"publicationDate":"2024-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3775","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139584854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A collaborative framework for unifying typical multidimensional solar cell simulations – Part I. Ten common simulation steps and representing variables","authors":"Fa-Jun Ma,&nbsp;Shaozhou Wang,&nbsp;Chuqi Yi,&nbsp;Lang Zhou,&nbsp;Ziv Hameiri,&nbsp;Stephen Bremner,&nbsp;Xiaojing Hao,&nbsp;Bram Hoex","doi":"10.1002/pip.3779","DOIUrl":"10.1002/pip.3779","url":null,"abstract":"<p>Multidimensional simulations for diverse solar cells often encounter distinctive configurations, even when employing the same simulation software. The complexity and inefficiency of this process are further exacerbated when employing different simulators. From our extensive decade-long experience in numerical simulations of diverse solar cells, we have identified ten common simulation steps intrinsic to typical electrical and optical simulations. Subsequently, we propose ten sets of variables that encompass all the relevant details required for these steps. To address the challenge of varying information requirements for each variable across different simulations, we assign a list, a versatile data type, to each variable. This approach, by design, enables concise, coherent, and flexible input, accommodating the unique demands of each simulation. However, to ensure unambiguous simulations, precise specifications for these variables are essential. Computer code has been successfully implemented to ensure adherence to specifications and expedite variable synchronization with Sentaurus, the de facto standard for device simulation. Within this framework, users are only tasked with editing variables in a plain text file, obviating the need for in-depth knowledge of Sentaurus. This streamlines the prerequisites for engaging in numerical simulation significantly. Through thoughtful design considerations, we preserve the simulation capacity while simultaneously enhancing productivity considerably. This open-source framework welcomes global collaboration within the photovoltaic community and has the potential to generate an extensive dataset for cost-effective artificial intelligence training.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 5","pages":"330-345"},"PeriodicalIF":6.7,"publicationDate":"2024-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3779","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139584959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface saturation current densities of perovskite thin films from Suns-photoluminescence quantum yield measurements","authors":"Robert Lee Chin,&nbsp;Arman Mahboubi Soufiani,&nbsp;Paul Fassl,&nbsp;Jianghui Zheng,&nbsp;Eunyoung Choi,&nbsp;Anita Ho-Baillie,&nbsp;Ulrich W. Paetzold,&nbsp;Thorsten Trupke,&nbsp;Ziv Hameiri","doi":"10.1002/pip.3767","DOIUrl":"10.1002/pip.3767","url":null,"abstract":"<p>We present a simple yet powerful analysis of Suns-photoluminescence quantum yield measurements that can be used to determine the surface saturation current densities of thin film semiconductors. We apply the method to state-of-the-art polycrystalline perovskite thin films of varying absorber thickness. We show that the non-radiative bimolecular recombination in these samples originates from the surfaces. To the best of our knowledge, this is the first study to demonstrate and quantify non-linear (bimolecular) surface recombination in perovskite thin films.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 1","pages":"109-115"},"PeriodicalIF":8.0,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3767","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139515063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wafer-bonded two-terminal III-V//Si triple-junction solar cell with power conversion efficiency of 36.1% at AM1.5g","authors":"Patrick Schygulla,&nbsp;Ralph Müller,&nbsp;Oliver Höhn,&nbsp;Michael Schachtner,&nbsp;David Chojniak,&nbsp;Andrea Cordaro,&nbsp;Stefan Tabernig,&nbsp;Benedikt Bläsi,&nbsp;Albert Polman,&nbsp;Gerald Siefer,&nbsp;David Lackner,&nbsp;Frank Dimroth","doi":"10.1002/pip.3769","DOIUrl":"10.1002/pip.3769","url":null,"abstract":"<p>In this work, we present the fabrication and analysis of a wafer-bonded GaInP/GaInAsP//Si triple-junction solar cell with 36.1% conversion efficiency under AM1.5g spectral illumination. The new cell design presents an improvement over previous III-V//Si triple-junction cells by the implementation of a rear-heterojunction for the middle cell. Furthermore, an advanced metallodielectric rear-side grating was used for light trapping enhancement in the silicon bottom cell that increased the silicon subcell current by 1.4 mA/cm². The external radiative efficiency was quantified to be 1.5 times higher compared to a reference device with a GaInAsP homojunction middle cell. A luminescent coupling factor of 0.46 between the middle and bottom subcell was determined. The share of recombination in the space-charge region was experimentally shown to be insignificant as intended by the rear-heterojunction design. Overall, the open-circuit voltage of the middle cell increased by 61 mV compared to the previous generation. Given the established long-term stability of III-V and silicon-based solar cells, these results are promising steps towards the future employment of III-V/Si tandem solar cells.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 1","pages":"100-108"},"PeriodicalIF":8.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3769","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139411083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photovoltaics literature survey (no. 188)","authors":"Ziv Hameiri","doi":"10.1002/pip.3772","DOIUrl":"https://doi.org/10.1002/pip.3772","url":null,"abstract":"&lt;p&gt;In order to help readers stay up-to-date in the field, each issue of &lt;i&gt;Progress in Photovoltaics&lt;/i&gt; will contain a list of recently published journal articles that are most relevant to its aims and scope. This list is drawn from an extremely wide range of journals, including &lt;i&gt;IEEE Journal of Photovoltaics&lt;/i&gt;, &lt;i&gt;Solar Energy Materials and Solar Cells&lt;/i&gt;, &lt;i&gt;Renewable Energy&lt;/i&gt;, &lt;i&gt;Renewable and Sustainable Energy Reviews&lt;/i&gt;, &lt;i&gt;Journal of Applied Physics&lt;/i&gt;, and &lt;i&gt;Applied Physics Letters&lt;/i&gt;. To assist readers, the list is separated into broad categories, but please note that these classifications are by no means strict. Also note that inclusion in the list is not an endorsement of a paper's quality. If you have any suggestions please email Ziv Hameiri at &lt;span&gt;[email protected]&lt;/span&gt;.&lt;/p&gt;&lt;p&gt;Müller D, Jiang ER, Rivas-Lazaro P, et al &lt;b&gt;Indoor photovoltaics for the Internet-of-Things - A comparison of state-of-the-art devices from different photovoltaic technologies.&lt;/b&gt; &lt;i&gt;Acs Applied Energy Materials&lt;/i&gt; 2023; &lt;b&gt;6&lt;/b&gt;(20): 10404–10414.&lt;/p&gt;&lt;p&gt;Chen ZS, Sun P. &lt;b&gt;Generic technology R&amp;D strategies in dual competing photovoltaic supply chains: A social welfare maximization perspective.&lt;/b&gt; &lt;i&gt;Applied Energy&lt;/i&gt; 2024; &lt;b&gt;353&lt;/b&gt;: 122089.&lt;/p&gt;&lt;p&gt;Virtuani A, Borja Block A, Wyrsch N, et al &lt;b&gt;The carbon intensity of integrated photovoltaics.&lt;/b&gt; &lt;i&gt;Joule&lt;/i&gt; 2023; &lt;b&gt;7&lt;/b&gt;(11): 2511–2536.&lt;/p&gt;&lt;p&gt;Mirletz H, Hieslmair H, Ovaitt S, et al &lt;b&gt;Unfounded concerns about photovoltaic module toxicity and waste are slowing decarbonization.&lt;/b&gt; &lt;i&gt;Nature Physics&lt;/i&gt; 2023; &lt;b&gt;19&lt;/b&gt;(10): 1376–1378.&lt;/p&gt;&lt;p&gt;Chen Y, Chen D, Altermatt PP, et al &lt;b&gt;Technology evolution of the photovoltaic industry: Learning from history and recent progress.&lt;/b&gt; &lt;i&gt;Progress in Photovoltaics: Research and Applications&lt;/i&gt; 2023; &lt;b&gt;31&lt;/b&gt;(12): 1194–1204.&lt;/p&gt;&lt;p&gt;Hassan S, Dhimish M. &lt;b&gt;Enhancing solar photovoltaic modules quality assurance through convolutional neural network-aided automated defect detection.&lt;/b&gt; &lt;i&gt;Renewable Energy&lt;/i&gt; 2023; &lt;b&gt;219&lt;/b&gt;: 119389.&lt;/p&gt;&lt;p&gt;Lee M-H. &lt;b&gt;Predicting and analyzing the fill factor of non-fullerene organic solar cells based on material properties and interpretable machine-learning strategies.&lt;/b&gt; &lt;i&gt;Solar Energy&lt;/i&gt; 2024; &lt;b&gt;267&lt;/b&gt;: 112191.&lt;/p&gt;&lt;p&gt;Liu Q, Liu M, Wang C, et al &lt;b&gt;An efficient CNN-based detector for photovoltaic module cells defect detection in electroluminescence images.&lt;/b&gt; &lt;i&gt;Solar Energy&lt;/i&gt; 2024; &lt;b&gt;267&lt;/b&gt;: 112245.&lt;/p&gt;&lt;p&gt;Yousif H, Al-Milaji Z. &lt;b&gt;Fault detection from PV images using hybrid deep learning model.&lt;/b&gt; &lt;i&gt;Solar Energy&lt;/i&gt; 2024; &lt;b&gt;267&lt;/b&gt;: 112207.&lt;/p&gt;&lt;p&gt;Heidrich R, Barretta C, Mordvinkin A, et al &lt;b&gt;UV lamp spectral effects on the aging behavior of encapsulants for photovoltaic modules.&lt;/b&gt; &lt;i&gt;Solar Energy Materials and Solar Cells&lt;/i&gt; 2024; &lt;b&gt;266&lt;/b&gt;: 112674.&lt;/p&gt;&lt;p&gt;Nan C, Hao Y, Huang X, et al &lt;b&gt;Investigation on temperature dependence of recent high-efficiency silicon solar modules.&lt;/b&gt; &lt;i&gt;Solar Energy Ma","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 2","pages":"130-134"},"PeriodicalIF":6.7,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3772","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139406912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Predicting encapsulant delamination in photovoltaic modules bridging photochemical reaction kinetics and fracture mechanics","authors":"Kuan Liu,&nbsp;Patrick Thornton,&nbsp;Dagmar R. D'hooge,&nbsp;Reinhold H. Dauskardt","doi":"10.1002/pip.3771","DOIUrl":"10.1002/pip.3771","url":null,"abstract":"<p>Photovoltaic (PV) modules are subjected to environmental stressors (UV exposure, temperature, and humidity) that cause degradation within the encapsulant and its interfaces with adjacent glass and cell substrates. To save experimental time and to enable long-term assessment with intensive degradation only taking place after many years, the development of predictive models is indispensable. Previous works have modeled the delamination of the ethylene vinyl acetate (EVA) encapsulant/glass and encapsulant/cell interfaces under field aging conditions with fundamental photochemical degradation reactions that lead to molecular scission and loss of interfacial adhesion, characterized by the fracture resistance, <i>G</i>_<i>c</i>. However, these models were fundamentally limited in that the following aspects were not incorporated: (i) molecular crosslinking in the field, (ii) synergistic autocatalytic interactions of degradation mechanisms, (iii) connection between degraded encapsulant structure and its mechanical properties, and (iv) rigorous treatment of the plasticity contribution to <i>G</i>_<i>c</i> with finite element models. Here, we present a time-dependent multiscale model that addresses these limitations and is applicable to a wide range of encapsulants and interfaces. For the reference EVA encapsulant and its interfaces with the glass and cell, the presented model predicts an initial rise in <i>G</i>_<i>c</i> in the first 3 years of field aging from crosslinking, then a subsequent sharp decline from degradation mechanisms. We used nanoindentation to measure the changes in EVA mechanical properties over exposure time to tune the model parameters. The model predictions of <i>G</i>_<i>c</i> and mechanical properties match with experimental data and show an improvement compared to previous models. The model can even predict switches in failure interfaces, such as the observed EVA/cell to EVA/glass transition. We also conducted a sensitivity analysis study by varying the degradation and crosslinking kinetic parameters to demonstrate their effects on <i>G</i>_<i>c</i>. Model extensions to polyolefin elastomer- and silicone-encapsulants and their interfaces are also demonstrated.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 5","pages":"317-329"},"PeriodicalIF":6.7,"publicationDate":"2023-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139068040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Toward efficient and industrially compatible fully textured perovskite silicon tandem solar cells: Controlled process parameters for reliable perovskite formation","authors":"Oussama Er-raji,&nbsp;Alexander J. Bett,&nbsp;Stefan Lange,&nbsp;Henning Nagel,&nbsp;Martin Bivour,&nbsp;Oliver Schultz-Wittmann,&nbsp;Christian Hagendorf,&nbsp;Martin Hermle,&nbsp;Juliane Borchert,&nbsp;Stefan W. Glunz,&nbsp;Patricia S. C. Schulze","doi":"10.1002/pip.3770","DOIUrl":"10.1002/pip.3770","url":null,"abstract":"<p>Capitalizing on the existing silicon industry, fully textured perovskite-silicon tandem solar cells have a great potential to penetrate the electricity market. While the use of textured silicon with large pyramid size (&gt; 1 μm) enhances the power conversion efficiency (<i>PCE</i>), it also presents process complications. To achieve high performance, meticulous control of deposition parameters on textured silicon is required. This study provides a guideline for the use of the hybrid evaporation/spin-coating route to form high-quality perovskite absorbers. Using various characterization techniques, we highlight intrinsic differences between perovskite growth on flat versus textured substrates. Furthermore, we provide pathways to ensure a high perovskite phase purity, reveal mitigation strategies to avoid the formation of undesired dendritic perovskite structures, give guidelines to ensure photostability, and discuss the “misleading” effect of residual PbI₂ on the perovskite photoluminescence response. A good understanding of the perovskite growth on textured silicon enables the fabrication of a tandem device with a <i>PCE</i> &gt; 26% (without employing additives or surface treatments) and a good operational stability. The comprehensive guidelines in this study provide a better understanding of perovskite formation on textured silicon and can be transferred when upscaling the hybrid route perovskite deposition.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 1","pages":"86-99"},"PeriodicalIF":8.0,"publicationDate":"2023-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3770","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139068043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Shingle cell \u0000\u0000 I\u0000 V characterization based on spatially resolved host cell measurements","authors":"Philipp Kunze,&nbsp;Matthias Demant,&nbsp;Alexander Krieg,&nbsp;Ammar Tummalieh,&nbsp;Nico Wöhrle,&nbsp;Stefan Rein","doi":"10.1002/pip.3764","DOIUrl":"10.1002/pip.3764","url":null,"abstract":"<p>Each solar cell is characterized at the end-of-line using current-voltage (\u0000<span></span><math>\u0000 <mi>I</mi>\u0000 <mi>V</mi></math>) measurements, except shingle cells, due to multiplied measurement efforts. Therefore, the respective host cell quality is adopted for all resulting shingles, which is sufficient for samples with laterally homogeneous quality. Yet, for heterogeneous defect distributions, this procedure leads to (i) loss of high-quality shingles due to defects on neighboring host cell parts, (ii) increased mismatch losses due to inaccurate binning, and (iii) lack of shingle-precise characterization. In spatially resolved host measurements, such as electroluminescence images, all shingles are visible along with their properties. Within a comprehensive experiment, 840 hosts and their resulting shingles are measured. Thereafter, a deep learning model has been designed and optimized which processes host images and determines \u0000<span></span><math>\u0000 <mi>I</mi>\u0000 <mi>V</mi></math> parameters like efficiency or fill factor, \u0000<span></span><math>\u0000 <mi>I</mi>\u0000 <mi>V</mi></math> curves, and binning classes for each shingle cell. The efficiency can be determined with an error of \u0000<span></span><math>\u0000 <mn>0</mn>\u0000 <mo>.</mo>\u0000 <mn>06</mn>\u0000 <mo> </mo>\u0000 <msub>\u0000 <mtext>%</mtext>\u0000 <mtext>abs</mtext>\u0000 </msub></math> enabling a \u0000<span></span><math>\u0000 <mn>13</mn>\u0000 <mo> </mo>\u0000 <msub>\u0000 <mtext>%</mtext>\u0000 <mtext>abs</mtext>\u0000 </msub></math> improvement in correct assignment of shingles to bin classes compared with industry standard. This results in lower mismatch losses and higher output power on module level as demonstrated within simulations. Also, \u0000<span></span><math>\u0000 <mi>I</mi>\u0000 <mi>V</mi></math> curves of defective and defect-free shingle cells can be derived with good agreement to actual shingle measurements.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 1","pages":"76-85"},"PeriodicalIF":8.0,"publicationDate":"2023-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3764","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139056628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}