Yucheng Hu, Ece Washbrook, Arivazhagan Valluvar Oli, Andrea Griesi, Yurii P. Ivanov, Mariam Pelling, Simon M. Fairclough, Kulwinder Kaur, Michele Melchiorre, Adam Hultqvist, Tobias Törndahl, Wolfram Hempel, Wolfram Witte, Giorgio Divitini, Susanne Siebentritt, Rachel A. Oliver, Gunnar Kusch
{"title":"Silver-Alloyed Wide-Bandgap (Ag,Cu)(In,Ga)S2 Thin-Film Solar Cells With 15.5% Efficiency","authors":"Yucheng Hu, Ece Washbrook, Arivazhagan Valluvar Oli, Andrea Griesi, Yurii P. Ivanov, Mariam Pelling, Simon M. Fairclough, Kulwinder Kaur, Michele Melchiorre, Adam Hultqvist, Tobias Törndahl, Wolfram Hempel, Wolfram Witte, Giorgio Divitini, Susanne Siebentritt, Rachel A. Oliver, Gunnar Kusch","doi":"10.1002/pip.70097","DOIUrl":"https://doi.org/10.1002/pip.70097","url":null,"abstract":"<p>Sulfide chalcopyrite Cu(In,Ga)S<sub>2</sub> (CIGS) is a wide-bandgap semiconductor suitable for the top cell of a tandem solar device. Here, we demonstrate significant improvements in absorber quality by alloying with Ag to form (Ag,Cu)(In,Ga)S<sub>2</sub> (ACIGS) absorbers. We report the Ag alloying effect on compositional, structural, and optoelectronic properties of absorbers. We demonstrate suppressed bulk recombination and improved carrier lifetime in ACIGS, as a result of improved grain size, porosity reduction, and defect passivation. We also show that Ag alloying flattens the Ga gradient. Consideration of this impact of Ag will be necessary in future engineering of the Ga profile to maximize charge carrier collection and avoid interface recombination. Exploiting the beneficial effects of Ag alloying, we report a wide-bandgap (1.58 eV) ACIGS solar cell with a high power conversion efficiency of 15.5% and a large open-circuit voltage (<i>V</i><sub>OC</sub>) of 948 mV, improving on the reference pure CIGS solar cell, with an 11.2% efficiency and an 821 mV <i>V</i><sub>OC</sub>. Ag alloying is a useful route to further increase the efficiency of CIGS solar cells and future tandem devices.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 7","pages":"942-956"},"PeriodicalIF":7.6,"publicationDate":"2026-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70097","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148147098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design, Characterization, and Performance Evaluation of Highly Efficient Lead-Free Gradient-Structured Perovskite Solar Cells With Carbon Nanotube–Based Hole Transport Material","authors":"Shazia Akhtar Dar, Brajendra Singh Sengar","doi":"10.1002/pip.70076","DOIUrl":"https://doi.org/10.1002/pip.70076","url":null,"abstract":"<div>\u0000 \u0000 <p>This study addresses the challenges of toxicity, high cost, and stability in perovskite solar cells (PSCs) while advancing the development of efficient lead-free alternatives. Using density functional theory (DFT) calculations and SCAPS-1D simulations, we designed and optimized CsSnCl<sub>3</sub> PSCs, identifying it as a promising absorber material due to its direct bandgap of 1.52 eV, ideal for photovoltaic (PV) applications. Among various electron transport layers (ETLs), tungsten disulfide (WS<sub>2</sub>) exhibited superior energy level matching, whereas carbon nanotube (CNT) was selected as the hole transport layer (HTL) for its excellent charge extraction and recombination suppression. Optimization of the CsSnCl<sub>3</sub> absorber thickness (600 nm) and trap density (<i>N</i><sub><i>t</i></sub> = 1 × 10<sup>14</sup> cm<sup>−3</sup>) improved film quality and carrier lifetime, leading to enhanced device performance. Gradient doping (<i>G</i>), combined with charge transport layer (CTL) and interface engineering, played a key role in efficiency enhancement. A doping gradient of <i>G</i> = 20 optimized energy band alignment, strengthened the built-in electric field, and reduced recombination losses, facilitating efficient charge carrier separation and transport. Even with just three gradient-doped sub-layers, significant performance improvements were observed. By systematically refining key device parameters, we achieved a record-high power conversion efficiency (PCE) of 25.77%, with <i>V</i><sub><i>oc</i></sub> = 1.154 V, <i>J</i><sub><i>sc</i></sub> = 25.60 mA/cm<sup>2</sup>, and <i>FF</i> <b>=</b> 87.21%, surpassing previously reported values. Additionally, carbon (C) was identified as a cost-effective and efficient back electrode material. Temperature studies further demonstrated that CsSnCl<sub>3</sub>-based PSCs perform optimally in low-temperature environments, reinforcing their suitability for diverse operating conditions. These findings establish CsSnCl<sub>3</sub> PSCs as a promising lead-free alternative for next-generation photovoltaics. The combination of gradient doping, optimized CTLs, and interface engineering paves the way for high-efficiency, stable, and environmentally sustainable solar cells (SCs).</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 7","pages":"821-842"},"PeriodicalIF":7.6,"publicationDate":"2026-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148147250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Factors Influencing the Abrasion Damage to Antisoiling Coatings on Photovoltaic Modules","authors":"Sonali Bhaduri, Rohan Bajhal, Makrand Farkade, Sudhanshu Mallick, Narendra Shiradkar, Anil Kottantharayil","doi":"10.1002/pip.70089","DOIUrl":"https://doi.org/10.1002/pip.70089","url":null,"abstract":"<div>\u0000 \u0000 <p>Soiling significantly reduces the performance of PV modules, and robotic cleaning is commonly used to mitigate dust in large PV plants. However, frequent cleaning can damage antireflective/antisoiling coatings. This paper examines factors affecting abrasion damage on four commercial hydrophobic coatings (A, B, C and D) using a cleaning cycles simulator that emulates real-world conditions. Key findings include: (1) the presence of dust/soil during cleaning cycles decreases the coating life by 82×, compared to only-clean cycles, thus acting as the most significant stressor that abrades the coated samples. (2) Cleaning the samples with a brush material that has higher hardness (1.3×), coated samples show 3× lesser coating life. (3) Microfibre cloth brush causes the least damage to the antisoiling coatings (compared to other brush materials), as it applies the smallest weight on the sample's surface. (4) Coated samples show reduced (3×) coating life when cleaned with the direction of brush rotation as ‘towards the direction of travel,’ compared to ‘opposite to the direction of travel’ and ‘clockwise rotation.’ When the brush rotates towards the direction of travel, greater abrasion damage is seen due to the combined effect of dust particles (being dragged along with the brush) and brush bristles. (5) Reducing the horizontal velocity of brush travel by four times from 0.4 to 0.1 m/s results in a 3× decrease in coating life. PV developers and robotic cleaning manufacturers should optimize these variables to minimize damage to the top coatings applied on PV modules.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 7","pages":"906-919"},"PeriodicalIF":7.6,"publicationDate":"2026-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148147222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 6","pages":"641-642"},"PeriodicalIF":7.6,"publicationDate":"2026-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148066031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 6","pages":"786-791"},"PeriodicalIF":7.6,"publicationDate":"2026-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148062336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 6","pages":"771-785"},"PeriodicalIF":7.6,"publicationDate":"2026-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148069780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 6","pages":"758-770"},"PeriodicalIF":7.6,"publicationDate":"2026-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148069779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Katarina Kovačević, Yifeng Zhao, Paul Procel, Liqi Cao, Miro Zeman, Luana Mazzarella, Olindo Isabella
{"title":"On the Electron Transport in Simplified IBC-SHJ Solar Cells With MoOx Blanket Layer","authors":"Katarina Kovačević, Yifeng Zhao, Paul Procel, Liqi Cao, Miro Zeman, Luana Mazzarella, Olindo Isabella","doi":"10.1002/pip.70054","DOIUrl":"https://doi.org/10.1002/pip.70054","url":null,"abstract":"<p>Interdigitated-back-contacted silicon heterojunction (IBC-SHJ) solar cells with molybdenum oxide (MoO<sub><i>x</i></sub>) as a hole transport layer and a novel (<i>n</i>)-type hydrogenated nanocrystalline silicon (nc-Si:H)/MoO<sub><i>x</i></sub> electron transport stack use ultra-thin MoO<sub><i>x</i></sub> as a full-area blanket layer. This solar cell architecture is realized with a simplified fabrication process and ensures high shunt resistances, attributed to the low lateral conductivity of the MoO<sub><i>x</i></sub> layer. Here we investigate the electron transport mechanisms through the electron collection contact to improve the understanding and performance of the IBC-SHJ solar cells. For this evaluation, we first introduce plasma treatments between (<i>n</i>)nc-Si:H and MoO<sub><i>x</i></sub> and assess their role in passivation, charge carrier transport and MoO<sub><i>x</i></sub> growth. Temperature-dependent current–voltage (<i>I–V</i>) measurements of front/back-contacted (FBC) solar cells with (<i>n</i>)nc-Si:H/MoO<sub><i>x</i></sub> stack, supported by high-resolution transmission electron microscopy (HR-TEM) and energy dispersive X-ray spectroscopy (EDX) imaging and numerical simulations, reveal that plasma treatment (PT) and plasma treatment with boron (PTB) enable electron transport based on direct energy transitions. Next, we perform thickness sensitivity analysis to find the optimal layer thicknesses of (<i>n</i>)nc-Si:H and MoO<sub><i>x</i></sub>. While FBC-SHJ devices exhibit stable performance across a broad range of (<i>n</i>)nc-Si:H thicknesses (10–50 nm), IBC-SHJ devices are more sensitive to such a thickness variation, with thinner (<i>n</i>)-layers limiting final device efficiency. The combination of 50-nm thick (<i>n</i>)nc-Si:H, PTB, and 1.7-nm thick MoO<sub><i>x</i></sub> enables the best performance of IBC-SHJ solar cells. When metallized with electroplated Cu, our champion IBC-SHJ solar cell with MoO<sub><i>x</i></sub> blanket layer reaches an efficiency of 23.59%. Further advancements in (<i>n</i>)nc-Si:H properties, passivation, transparent conductive oxide selection, and front-side light management are expected to drive efficiencies well above 24%.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 5","pages":"523-532"},"PeriodicalIF":7.6,"publicationDate":"2026-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70054","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147708241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dana B. Kern, Rebecca Wai, Kent Terwilliger, Steve Johnston
{"title":"UV-Induced Degradation and Associated Metastability in TOPCon Photovoltaic Modules: Understanding Kinetics and Cell Variance","authors":"Dana B. Kern, Rebecca Wai, Kent Terwilliger, Steve Johnston","doi":"10.1002/pip.70067","DOIUrl":"https://doi.org/10.1002/pip.70067","url":null,"abstract":"<div>\u0000 \u0000 <p>Tunnel oxide passivated contact (TOPCon) silicon photovoltaic (PV) modules are dominating the PV market, but they may be susceptible to degradation under ultraviolet (UV)-containing light. Quantifying the impacts of UV-induced degradation (UVID) is complicated by an associated metastability causing further degradation under dark storage and rapid recovery under sunlight. Here, we study modules that have −2.3% to −3.2% nonrecoverable UVID loss after 60 kWh/m<sup>2</sup> dose of 340 nm light and additional recoverable loss under dark storage. We use in situ electroluminescence (EL) imaging to characterize the post-UVID metastability at the module level. The cell-by-cell dark degradation and recovery kinetics span a wide range from +6% to −70% changes in EL intensity after 520 h of dark storage, which returns to ± 4% of the initial post-UVID EL intensity after illumination. The kinetics follow double exponential rates with dark storage degradation time constants of 345 and 45 h, and UV light recovery time constants of 5 min and 36 s. We propose that this is consistent with prior reports of kinetics for light-soaking metastability in Al<sub>2</sub>O<sub>3</sub> passivation. Finally, we further show that cells having high UVID also have injection-dependent effective carrier lifetimes and significant intra-cell variance, suggesting possible origins of processing inconsistency.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 5","pages":"589-599"},"PeriodicalIF":7.6,"publicationDate":"2026-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147708172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Advances in Carbon Electrode Integration for Stable and Efficient Perovskite Solar Cells and Modules","authors":"Jacob Wall, Feng Yan","doi":"10.1002/pip.70053","DOIUrl":"https://doi.org/10.1002/pip.70053","url":null,"abstract":"<div>\u0000 \u0000 <p>Carbon-electrode-based perovskite solar cells (C-PSCs) have emerged as a cost-effective and scalable alternative to noble-metal-based PSCs, addressing critical challenges related to device stability, fabrication complexity, and commercialization potential. This review explores the recent progress in C-PSC development, focusing on the benefits of carbon electrodes (CEs), including their hydrophobicity, chemical inertness to halide corrosion, and compatibility with low-temperature cost-effective solution-based deposition methods. Despite relatively lower power conversion efficiencies (PCEs) than their metal (e.g., Au/Ag) counterparts, recent advances in carbon paste formulation, interfacial contact engineering, and work function modification have elevated C-PSC efficiencies above 22%. This review further examines strategies to enhance electrode conductivity, interfacial properties, and charge selectivity to further increase C-PSC performance. Progress in carbon-electrode-based perovskite solar modules (C-PSMs), particularly within mesoporous and planar architectures, is also analyzed, revealing significant developments in active area scaling and long-term stability. Notably, the limited research in inverted (PIN) C-PSCs is also highlighted as a compelling opportunity for innovation, given the architecture's inherent advantages in flexibility, tandem integration, and low-temperature processing. Collectively, these insights affirm the potential of C-PSCs and C-PSMs to deliver affordable, stable, and high-performance photovoltaics suitable for scalable deployment.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 5","pages":"503-522"},"PeriodicalIF":7.6,"publicationDate":"2026-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147708227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}